This is information on a product in full production.
October 2013 DocID023448 Rev 5 1/21
STD7N80K5, STP7N80K5,
STU7N80K5
N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
TO-220
12
3
TAB
DPAK
1
3
TAB
2
3
2
1
TAB
IPAK
D(2, TAB)
G(1)
S(3)
AM01476v1
Order codes V
DS
R
DS(on)
max I
D
P
TOT
STD7N80K5
800 V 1.2 Ω6 A 110 WSTP7N80K5
STU7N80K5
Table 1. Device summary
Order codes Marking Package Packaging
STD7N80K5
7N80K5
DPAK Tape and reel
STP7N80K5 TO-220 Tube
STU7N80K5 IPAK
www.st.com
Contents STD7N80K5, STP7N80K5, STU7N80K5
2/21 DocID023448 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID023448 Rev 5 3/21
STD7N80K5, STP7N80K5, STU7N80K5 Electrical ratings
21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate- source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 6 A
I
D
Drain current (continuous) at T
C
= 100 °C 3.8 A
I
DM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 24 A
P
TOT
Total dissipation at T
C
= 25 °C 110 W
I
AR
Max current during repetitive or single
pulse avalanche
(pulse width limited by T
jmax
)
2A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V) 88 mJ
dv/dt
(2)
2. I
SD
6 A, di/dt 100 A/µs, V
DS(peak)
V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
TjOperating junction temperature -55 to 150 °C
Tstg Storage temperature °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK TO-220 IPAK
R
thj-case
Thermal resistance junction-case max 1.14 °C/W
R
thj-amb
Thermal resistance junction-amb max 62.5 100 °C/W
R
thj-pcb(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Thermal resistance junction-pcb max 50 °C/W
Electrical characteristics STD7N80K5, STP7N80K5, STU7N80K5
4/21 DocID023448 Rev 5
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0) I
D
= 1 mA 800 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 800 V
V
DS
= 800 V, Tc=125 °C
1
50
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA 3 4 5 V
R
DS(on)
Static drain-source on-
resistance V
GS
= 10 V, I
D
= 3 A 0.95 1.2 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-360- pF
C
oss
Output capacitance - 30 - pF
C
rss
Reverse transfer
capacitance -1-pF
C
o(tr)(1)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance time
related VGS = 0, VDS = 0 to 640 V
-47-pF
Co(er)(2)
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance
energy related -20-pF
RGIntrinsic gate resistance f = 1 MHz, ID=0 - 6 - Ω
QgTotal gate charge VDD = 640 V, ID = 6 A
VGS =10 V
(see Figure 17)
- 13.4 - nC
Qgs Gate-source charge - 3.7 - nC
Qgd Gate-drain charge - 7.5 - nC
DocID023448 Rev 5 5/21
STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics
21
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device's ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 400 V, I
D
= 3 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 19)
-11.3- ns
t
r
Rise time 8.3 ns
t
d(off)
Turn-off delay time 23.7 ns
t
f
Fall time 20.2 ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 6 A
I
SDM
Source-drain current (pulsed) - 24 A
V
SD(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage I
SD
= 6 A, V
GS
=0 - 1.5 V
t
rr
Reverse recovery time I
SD
= 6 A, V
DD
= 60 V
di/dt = 100 A/µs,
(see Figure 18)
- 315 ns
Q
rr
Reverse recovery charge - 2.8 µC
I
RRM
Reverse recovery current - 17.5 A
t
rr
Reverse recovery time I
SD
= 6 A,V
DD
= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 18)
- 480 ns
Q
rr
Reverse recovery charge - 3.8 µC
I
RRM
Reverse recovery current - 16 A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min Typ. Max Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
=0 30 - - V
Electrical characteristics STD7N80K5, STP7N80K5, STU7N80K5
6/21 DocID023448 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
Figure 3. Thermal impedance for DPAK and
IPAK
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DocID023448 Rev 5 7/21
STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics
21
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
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Electrical characteristics STD7N80K5, STP7N80K5, STU7N80K5
8/21 DocID023448 Rev 5
Figure 14. Normalized V
(BR)DSS
vs temperature Figure 15. Maximum avalanche energy vs
starting T
J
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DocID023448 Rev 5 9/21
STD7N80K5, STP7N80K5, STU7N80K5 Test circuits
21
3 Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5
10/21 DocID023448 Rev 5
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID023448 Rev 5 11/21
STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data
21
Table 9. DPAK (TO-252) type A mechanical data
Dim.
mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 5.10
E6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R0.20
V2
Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5
12/21 DocID023448 Rev 5
Figure 22. DPAK (TO-252) type A drawing
0068772_M_type_A
DocID023448 Rev 5 13/21
STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data
21
Figure 23. DPAK (TO-252) type A footprint
(a)
a. All dimensions are in millimeters
Footprint_REV_M_type_A
Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5
14/21 DocID023448 Rev 5
Table 10. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P3.75 3.85
Q2.65 2.95
DocID023448 Rev 5 15/21
STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data
21
Figure 24. TO-220 type A drawing
Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5
16/21 DocID023448 Rev 5
Table 11. IPAK (TO-251) mechanical data
DIM
mm.
min. typ. max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.30
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10°
DocID023448 Rev 5 17/21
STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data
21
Figure 25. IPAK (TO-251) drawing
0068771_K
Packaging mechanical data STD7N80K5, STP7N80K5, STU7N80K5
18/21 DocID023448 Rev 5
5 Packaging mechanical data
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
DocID023448 Rev 5 19/21
STD7N80K5, STP7N80K5, STU7N80K5 Packaging mechanical data
21
Figure 26. Tape
Figure 27. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STD7N80K5, STP7N80K5, STU7N80K5
20/21 DocID023448 Rev 5
6 Revision history
Table 13. Document revision history
Date Revision Changes
17-Jul-2012 1 First release.
17-Oct-2012 2 Minor text changes in cover page
Modified: title and I
D
value in cover page
19-Dec-2012 3
Minor text changes
Added: IPAK package
Updated: Section 4: Package mechanical data for IPAK
18-Mar-2013 4
Modified: I
AR
value on Ta b le 2
Updated: Section 4: Package mechanical data only for DPAK
package
09-Oct-2013 5
The part number STF7N80K5 has been moved to a separate
datasheet
Minor text changes
DocID023448 Rev 5 21/21
STD7N80K5, STP7N80K5, STU7N80K5
21
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