SMD ESD Protection Diode CPDQA5V0P-HF RoHS Device Halogen Free Features WBFBP-03E/SOT-883 - IEC61000-4-2 Level 4 ESD Protection. - Bi-directional ESD protection of one line. - Fast response time. 0.026(0.65) 0.022(0.55) - Low reverse stand-off voltage: 5V - Low reverse clamping voltage. 0.041(1.05) 0.037(0.95) - Low leakage current. - Low capacitance:3pF(Typ.) 0.004(0.10) 0.000(0.01) Mechanical data 0.022(0.55) 0.018(0.45) - Case: WBFBP-03E/SOT-883 molded plastic encapsulate diodes. 0.018(0.45) REF. - Mounting position: Any. 0.012(0.30) 0.008(0.20) 0.015(0.37) 0.011(0.27) 0.002(0.05) REF. 0.002(0.05) REF. Circuit Diagram 0.018(0.45) 0.015(0.37) 0.011(0.27) REF. 1 0.016(0.40) 0.012(0.30) 0.025(0.64) REF. 0.008(0.20) 0.004(0.10) 3 2 Dimensions in inches and (millimeter) Maximum Rating (at T =25C unless otherwise noted) A Symbol Parameter ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) JESD22-A114-B ESD voltage ESD voltage Per Human Body Model Machine Model (1) VESD Value 15 8 16 0.4 Unit kV (2) 39 W (2) 3 A TL 260 C Junction temperature range TJ -40 to +150 C Storage temperature range TSTG -55 to +150 C Peak pulse power PPP Peak pulse current IPP Lead solder temperature Maximum (10 second duration) Notes: 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP048 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Conditions Reverse stand off voltage VRWM Typ Min (1) Reverse leakage current VRWM = 5 V Breakdown voltage IT = 1 mA V(BR) Clamping voltage IPP = 3 A VC Junction capacitance VR= 0V , f=1MHz IR 5.6 (2) Max Unit 5 V 1 A 8 V 13 V pF 3 CJ Notes: 1. Other voltages available upon request. 2. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. RATING AND CHARACTERISTIC CURVES (CPDQA5V0P-HF) Fig.2 - Capacitance Characteristics Fig.1 - 8/20us Peak Pulse Current Wave Form Acc. IEC 61000-4-5 Ta=25C Percentage of Ipp 100% Test Waveform parameters tf=8us td=20us Peak Valur Ipp e-t 80% 60% 40% td= t Ipp/2 20% 5 Junction Capacitance, CJ (pF) 120% TA=25C f=1MHz 4 3 2 1 0% 0 0 5 10 15 20 25 0 30 1 Time, (us) Fig.3 - VC IPP 18 3 4 5 Fig. 4 - Power Rating Derating Curve TA=25C tp=8/20us Mounting on glass epoxy PCBs 15 100 Power rating, (%) Clamping Voltage, VC (V) 2 Reverse Voltage, VR ( V ) 12 9 6 80 60 40 20 3 0 0 1.0 1.5 2.0 2.5 3.0 Reverse Peak Pulse Current, IPP (A) 0 25 50 75 100 125 150 Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP048 Page 2 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification P0 P1 d W E HD F C A P 12 o 0 D2 D1 D W1 Trailer Tape 1004 Empty Pockets WBFBP-03E (SOT-883) WBFBP-03E (SOT-883) Components Leader Tape 2004 Empty Pockets SYMBOL A B C d D D1 D2 (mm) 0.66 + 0.04 - 0.01 1.15 0.05 0.66 0.05 1.50 + 0.10 178.00 2.00 54.40 1.00 13.00 1.00 (inch) 0.026 + 0.002 - 0.0004 0.045 0.002 0.026 0.002 0.059 + 0.004 7.008 0.079 2.142 0.039 0.512 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 0.10 3.50 0.05 2.00 0.05 4.00 0.05 2.00 0.05 8.00 + 0.30 - 0.10 12.30 1.00 (inch) 0.069 0.004 0.138 0.002 0.079 0.002 0.157 0.002 0.079 0.002 0.315 + 0.012 - 0.004 0.484 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP048 Page 3 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Part Number Marking Code CPDQA5V0P-HF HD* HD* HD = Device code Solid dot = Pin 1 indicator Suggested PAD Layout 0.014(0.35) 2 X 0.20 3 X 0.15 (0.008)0.20 0.022(0.55) 0.014(0.35) 1.00 X 0.60 PKG. 2 X 0.50 Standard Packaging REEL PACK Case Type WBFBP-03E REEL Reel Size ( pcs ) (inch) 10,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP048 Page 4 Comchip Technology CO., LTD.