MICRONAS Edition Feb. 5, 2001 6251-109-4E 6251-504-2DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7 7 8 9 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview 12 12 14 4. 4.1. 4.2. Type Descriptions HAL621 HAL629 16 16 16 16 5. 5.1. 5.2. 5.3. Application Notes Ambient Temperature Start-up Behavior EMC 16 6. Data Sheet History 2 Micronas HAL62x Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1.2. Family Overview The types differ according to the magnetic flux density values for the switching points and the mode of switching. 1. Introduction The HAL 62x family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a filter, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in their magnetic characteristics. All sensors contain an enhanced internal signal processing for very high repeatability requirements of the output signal. These sensors are the optimal solution for CAM and crank sensor applications. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4.2 V to 24 V in the ambient temperature range from -40 C up to 150 C. Type Switching Behavior Sensitivity see Page 621 bipolar very high 12 629 unipolar medium 14 Note: The HAL 629 is the improved successor of the HAL 628 with the same magnetic characteristics. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. All sensors are available in the SMD-package (SOT-89B) and in the leaded version (TO-92UA). 1.1. Features: - switching offset compensation at typically 360 kHz - signal processing with chopper stabilized filter - operates from 4.2 V to 24 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 15 kHz - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - magnetic characteristics are robust against mechanical stress effects - short-circuit protected open-drain output by thermal shut down - constant switching points over a wide supply voltage range - ideal sensor for applications in extreme automotive and industrial environments - EMC and ESD optimized design Micronas 3 HAL62x 1.3. Marking Code 1.6. Solderability All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. all packages: according to IEC68-2-58 Type During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Temperature Range A K E HAL621 621A 621K 621E HAL629 629A 629K 629E Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. VDD 1 1.3.1. Special Marking of Prototype Parts 3 Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. OUT 2 GND Fig. 1-1: Pin configuration 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C The relationship between ambient temperature (TA) and junction temperature is explained in section 5.1. on page 16. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 62x Example: HAL629UA-E Type: 629 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 4 Micronas HAL62x HAL62x 2. Functional Description The HAL 62x sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic flux perpendicular to the sensitive area is applied to the sensor, the Hall plate generates a Hall voltage proportional to this field. Reverse Voltage & Overvoltage Protection VDD 1 Temperature Dependent Bias Hall Plate LP Hysteresis Control Short Circuit & Overvoltage Protection Comparator Switch OUT Output 3 The total voltage which appears at the Hall plate is influenced by offset voltages (e. g. caused by mechanical stress). This offset voltage is compensated for by cyclic commutation of the connections for current flow and voltage measurement which makes the switching offset compensation technique possible. Therefore, an internal oscillator provides a clock. The output voltage of the switched Hall plate contains the Hall voltage as a DC or low frequency signal and the offset voltage as an AC signal at the chopper frequency. The following chopper stabilized low-pass filter supresses the offset voltage and the output signal is the offset compensated Hall voltage. Clock GND 2 Fig. 2-1: HAL62x block diagram B The following comparator block compares this offset compensated Hall voltage with the defined switching points. The output transistor is switched on when the magnetic field becomes larger than the operating point BON. It remains in this state as long as the magnetic field does not fall below the release point BOFF. If the magnetic field falls below BOFF, the transistor is switched off until the magnetic field once again exceeds BON. The built-in hysteresis eliminates oscillation. According to the principle of the circuit, there is a fixed delay time tdelay of typical 25 ms from crossing the magnetic thresholds to the switching of the output (see Fig. 2-2). BON BOFF t VO tdelay t Fig. 2-2: Timing diagram The temperature-dependent bias regulates the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. The output is short circuit protected by limiting high currents and by sensing overtemperature. Shunt protection devices clamp voltage peaks at the Output-pin and VDDpin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. Micronas 5 HAL62x 3. Specifications 3.1. Outline Dimensions sensitive area 4.55 0.15 0.2 1.7 0.3 sensitive area 4.06 0.1 1.5 0.4 0.3 y y 2 3.05 0.1 4 0.2 0.48 top view 1 2 3 0.55 0.4 1 2 3 0.4 0.75 0.2 1.15 3.1 0.2 2.55 min. 0.25 0.36 0.4 1.5 14.0 min. 0.42 3.0 1.27 1.27 branded side 2.54 0.06 0.04 branded side SPGS0022-5-A3/2E Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm 3.2. Dimensions of Sensitive Area 0.12 mm x 0.12 mm 3.3. Positions of Sensitive Areas 6 SOT-89B TO-92UA x center of the package center of the package y 0.975 mm nominal 1.0 mm nominal 45 0.8 SPGS7002-9-A/2E Fig. 3-2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. An improvement of the TO-92UA package with reduced tolerances will be introduced end of 2001. Micronas HAL62x 3.4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -15 281) V -VP Test Voltage for Supply 1 -242) - V -IDD Reverse Supply Current 1 - 501) mA IDDZ Supply Current through Protection Device 1 -2003) 2003) mA VO Output Voltage 3 -0.3 281) V IO Continuous Output On Current 3 - 501) mA IOmax Peak Output On Current 3 - 2503) mA IOZ Output Current through Protection Device 3 -2003) 2003) mA TS Storage Temperature Range5) -65 150 C TJ Junction Temperature Range -40 -40 150 1704) C 1) 2) 3) 4) 5) as long as TJmax is not exceeded with a 220 series resistance at pin 1 (see Fig. 4-9) t < 2 ms t < 1000h Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 4.2 24 V IO Continuous Output On Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V Micronas 7 HAL62x 3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 4.2 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V 8 Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 3.6 4.5 5.4 mA TJ = 25 C IDD Supply Current over Temperature Range 1 2.2 4.5 7.2 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32.5 V IDD = 25 mA , TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 - 28 32.5 V IOH = 25 mA , TJ = 25 C, t = 20 ms VOL Output Voltage 3 - 160 280 mV IOL = 20 mA, TJ = 25 C VOL Output Voltage over Temperature Range 3 - 160 400 mV IOL = 20 mA IOH Output Leakage Current 3 - 0.01 0.1 A Output switched off, TJ = 25 C, VOH 24 V IOH Output Leakage Current over Temperature Range 3 - - 10 A Output switched off, TJ 150 C, VOH 24 V fosc Internal Oscillator Chopper Frequency - - 360 - kHz TJ = 25 C td Delay Time between Switching Threshold DB and Edge of Output over Temperature Range - - 25 - s B > BON + 4 mT or B < BOFF - 4 mT ten(O) Enable Time of Output after Setting of VDD 3 - 30 70 s VDD = 12 V B > BON + 2 mT or B < BOFF - 2 mT tr Output Rise Time 3 - 0.07 0.4 s VDD = 12 V, RL = 820 Ohm, CL = 20 pF tf Output Fall Time 3 - 0.05 0.4 s VDD = 12 V, RL = 820 Ohm, CL = 20 pF RthJSB case SOT-89B Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-3 RthJA case TO-92UA Thermal Resistance Junction to Soldering Point - - 150 200 K/W Micronas HAL62x 3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 4.2 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C -1 1.2 4 -3 -0.7 2 1 1.9 3 mT 25 C -1 1.4 4 -3 -0.6 2 1 2 3 mT 170 C -1 1.6 4 -3 -0.4 2 1 1.9 3 mT HAL 629 -40 C 14.5 17.6 20.5 12.5 15.7 20 1 1.9 3 mT unipolar 25 C 14 17 20 12 15 19 1 2 3 mT 11.5 15.6 19.2 10 13.7 17.2 1 1.9 3 mT HAL 621 bipolar 170 C Note: For detailed descriptions of the individual types, see pages 12 and following. 5.0 2.0 2.0 1.0 Fig. 3-3: Recommended pad size SOT-89B Dimensions in mm Micronas 9 HAL62x mA 25 mA 7 HAL 62x 20 TA = -40 C IDD 6 IDD TA = 25 C 15 HAL 62x TA=100 C 5 TA=170 C 10 4 5 3 0 VDD = 4.2 V 2 -5 VDD = 12 V VDD = 24 V 1 -10 -15 -15-10 -5 0 0 -50 5 10 15 20 25 30 35 V 0 50 100 VDD 200 C TA Fig. 3-4: Typical supply current versus supply voltage mA 7 150 Fig. 3-6: Typical supply current versus ambient temperature mV 400 HAL 62x HAL 62x IO = 20 mA 350 6 IDD VOL 300 5 250 4 200 3 150 2 TA = -40 C 100 VDD = 4.2 V TA = 25 C 1 VDD = 12 V 50 TA=100 C VDD = 24 V TA=170 C 0 1 2 3 4 5 6 VDD Fig. 3-5: Typical supply current versus supply voltage 10 7 V 0 -50 0 50 100 150 200 C TA Fig. 3-7: Typical output low voltage versus ambient temperature Micronas HAL62x mV 400 mA 104 HAL 62x HAL 62x IO = 20 mA 103 350 IOH 102 VOL TA = 170 C 300 101 250 100 200 10-1 TA = 100 C 10-2 150 10-3 100 TA = -40 C 10-4 TA = 25 C 50 0 TA = 150 C TA=100 C 5 10 15 TA = -40 C 10-5 TA=170 C 0 TA = 25 C 20 25 10-6 15 30 V 20 25 30 VOH VDD Fig. 3-8: Typical output low voltage versus supply voltage mV 400 35 V Fig. 3-10: Typical output leakage current versus output voltage A HAL 62x HAL 62x 102 IO = 20 mA 350 101 VOL IOH 300 100 250 10-1 200 10-2 150 10-3 100 TA = -40 C 50 0 3.5 10-4 TA=100 C 4.0 4.5 TA=170 C 5.0 5.5 VDD Fig. 3-9: Typical output low voltage versus supply voltage Micronas VO = 24 V TA = 25 C 6.0 V 10-5 -50 0 50 100 150 200 C TA Fig. 3-11: Typical output leakage current versus ambient temperature 11 HAL621 4. Type Description Applications 4.1. HAL 621 The HAL 621 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: The HAL 621 is a very sensitive bipolar switching sensor (see Fig. 4-1). - applications with large airgap or weak magnets, - rotating speed measurement, The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. - crank shaft sensors, - CAM shaft sensors, and - magnetic encoders. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: bipolar VOL - very high sensitivity - typical BON: 1.4 mT at room temperature BOFF 0 BON B - typical BOFF: -0.6 mT at room temperature Fig. 4-1: Definition of magnetic switching points for the HAL 621 - operates with static magnetic fields and dynamic magnetic fields up to 15 kHz Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.2 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset BOFFSET Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C -1 1.2 4 -3 -0.7 2 1 1.9 3 0.2 mT 25 C -1 1.4 4 -3 -0.6 2 1 2 3 0.4 mT 100 C -1 1.4 4 -3 -0.5 2 1 1.9 3 0.4 mT 140 C -1 1.5 4 -3 -0.4 2 1 1.9 3 0.5 mT 170 C -1 1.6 4 -3 -0.4 2 1 1.9 3 0.6 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 12 Micronas HAL621 mT 3 BON BOFF mT 3 HAL 621 BON BOFF 2 HAL 621 2 BON BON 1 1 0 0 BOFF BOFF -1 -1 TA = -40 C TA = 25 C -2 VDD = 4.2 V VDD = 12 V -2 TA = 100 C VDD = 24 V TA = 150 C -3 0 5 10 15 20 25 V VDD BON BOFF 0 50 100 150 200 C TA Fig. 4-2: Typ. magnetic switching points versus supply voltage mT 3 -3 -50 Fig. 4-4: Typ. magnetic switching points versus temperature HAL 621 2 BON 1 0 BOFF -1 TA = -40 C TA = 25 C -2 TA = 100 C TA = 150 C -3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Typ. magnetic switching points versus supply voltage Micronas 13 HAL629 4.2. HAL 629 Applications The HAL 629 is an unipolar switching sensor (see Fig. 4-5). The HAL 629 is the improved successor of the HAL628 with the same magnetic characteristics. The HAL 629 is the optimal sensor for applications with one magnetic polarity such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - contactless solution to replace micro switches, - solid state switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: unipolar - medium sensitivity VOL - typical BON: 17 mT at room temperature 0 - typical BOFF: 15 mT at room temperature BOFF BON B Fig. 4-5: Definition of magnetic switching points for the HAL 629 - operates with static magnetic fields and dynamic magnetic fields up to 15 kHz - typical temperature coefficient of magnetic switching points is -600 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.2 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 14.5 17.6 20.5 12.5 15.7 20 1 1.9 3 16.6 mT 14 17 20 12 15 19 1 2 3 16 mT 100 C 12.7 16.3 19.6 11 14.4 18.1 1 1.9 3 15.4 mT 140 C 12.1 15.9 19.4 10.4 14 17.6 1 1.9 3 15 mT 170 C 11.5 15.6 19.2 10 13.7 17.2 1 1.9 3 14.6 mT -40 C 25 C Min. Typ. Unit Min. Max. The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 14 Micronas HAL629 mT 20 mT 20 HAL 629 HAL 629 BON BON BOFF BON BOFF 15 BON 15 BOFF BOFF 10 10 TA = -40 C 5 0 5 TA = 25 C 0 5 10 TA = 100 C VDD = 4.2 V VDD = 12 V TA = 150 C VDD = 24 V 15 20 25 V VDD 0 50 100 150 200 C TA Fig. 4-6: Typ. magnetic switching points versus supply voltage mT 20 0 -50 Fig. 4-8: Typ. magnetic switching points versus temperature HAL 629 BON BON BOFF 15 BOFF 10 TA = -40 C 5 TA = 25 C TA = 100 C TA = 150 C 0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Typ. magnetic switching points versus supply voltage Micronas 15 HAL62x 5. Application Notes 5.3. EMC and ESD 5.1. Ambient Temperature For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figure 4-9). The series resistor and the capacitor should be placed as closely as possible to the sensor. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T Applications with this arrangement passed the EMC tests according to the product standards DIN 40839. Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV 220 1 VEMC VP 1.2 k RL VDD OUT 3 4.7 nF 20 pF 5.2. Start-up Behavior 2 Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. GND Fig. 4-9: Test circuit for EMC investigations 6. Data Sheet History 1. Final data sheet: "HAL 621, HAL 629, Hall Effect Sensor Family", Feb. 3, 2000, 6251-504-1DS. First release of the final data sheet. 2. Final data sheet: "HAL 621, HAL 629, Hall Effect Sensor Family", Feb. 5, 2001, 6251-504-2DS. Second release of the final data sheet. Major changes: - position of sensitive area in SOT-89B package changed Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (02/2001) Order No. 6251-504-2DS 16 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Micronas