Features
l Surface Mount Application
l 11 thru 200 Volt Voltage Range
l Built-in strain relief
l Glass passivated junction
l Low inductance
Mechanical Data
l Case: JEDEC DO-214AB Molded plastic
over passivated junction
l Terminals solderable per MIL-STD-750, Method 2026
l Standard Packaging: 16mm tape(EIA-481)
l Maximum temperature for soldering: 260oC for 10 seconds.
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Maximum Ratings @ 25oC Unless Otherwise Specified
DC Power
Dissipation PD 5.0W
Peak forwar d
Surge Current
8.3ms sin gle half
IFSM See Fig.5 (Note:1 ,2)
Operation And
Storage
Temperature
TJ, TSTG -55oC to
+150 oC
NOTES:
1. Mounted on 8.0mm copper pads to each terminal.
2. 8.3ms single half sine-wave, or equivalent square wave,
duty cycle = 4 pulses per minute maximum.
SMCJ5348
THRU
SMCJ5388
Silicon
5.0 Watt
Zener Diodes
MCC
www.mccsemi.com
2
omponents
21201 Itasca Street Chatsworth
!"#
$% !"#
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .079 .103 2.00 2.62
B .108 .128 2.75 3.25
C .002 .008 0.051 0.203
D .006 .012 0.152 0.305
E .030 .050 0.76 1.27
F ..305 .320 7.75 8.13
G .260 .280 6.60 7.11
H .220 .245 5.59 6.22
0.060”
0.185
0.121”
SUGGESTED SOLDER
PAD LAYOUT
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DO-214AB
(SMCJ) (LEAD FRAME)
(Note: 1 )
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NOTE:
1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of ¡Ó 10% with
guaranteed limits on only Vz, IR, Ir, and VF as shown in the electrical characteristics table. Units with guaranteed
limits on all seven parameters are indicated by suffix “B” for ¡Ó 5% tolerance.
2. ZENER VOLTAGE (Vz) AND IMPEDANCE (ZZT & ZZK) - Test conditions for Zener voltage and impedance are as
follows; Iz is applied 40 ¡Ó 10 ms prior to reading. Mounting contacts are located from the inside edge of mounting
clips to the body of the diode.(TA=25 ¢J¡Ï¢·
¡Ð¢±¢J).
SMCJ5348 thru SMCJ5388 MCC
www.mccsemi.com
SMCJ5348
SMCJ5351
SMCJ5350
SMCJ5349
SMCJ5352
SMCJ5355
SMCJ5354
SMCJ5353
SMCJ5356
SMCJ5357
SMCJ5360
SMCJ5359
SMCJ5358
SMCJ5361
SMCJ5362
SMCJ5365
SMCJ5364
SMCJ5363
SMCJ5366
SMCJ5367
SMCJ5370
SMCJ5369
SMCJ5368
SMCJ5371
SMCJ5372
SMCJ5375
SMCJ5374
SMCJ5373
SMCJ5376
SMCJ5377
SMCJ5380
SMCJ5379
SMCJ5378
SMCJ5381
SMCJ5382
SMCJ5385
SMCJ5384
SMCJ5383
SMCJ5386
SMCJ5387
SMCJ5388
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting
contact located as specified in Note 3. (TA=25 ¢J¡Ï¢·
¡Ð¢±¢J).
4. VOLTAGE REGULATION (£GVz) - Test conditions for voltage regulation are as follows: Vz measurements are made
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40 ¡Ó10 ms.
(TA=25 ¢J¡Ï¢·
¡Ð¢±¢J). Mounting contact located as specified in Note2.
5. MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage of a
5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the
value of 5 watts divided by the actual Vz of the device. TL=75 ¢J at maximum from the device body.
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = £c LAPD + TA
£c LA is the lead-to-ambient thermal resistance (¢J/W)
and PD is the power dissipation.
Junction Temperature, TJ , may be found from:
TJ = TL + £GTJL
£GTJL is the increase in junction temperature above the
lead temperature and may be found from Figure 3 for
a train of power pulses or from Figure 4 for dc power.
£GTJL = £c JLPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ(£GTJ) may be estimated.
Changes in voltage, Vz, can then be found from:
£GV = £c VZ£GTJ
£c VZ, the zener voltage temperature coefficient, is fount
from Figures 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly be
the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 3 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure. 5 be
exceeded.
SMCJ5348 thru SMCJ5388 MCC
www.mccsemi.com
RATING AND CHARACTERISTICS CURVES
TEMPERATURE COEFFICIENTS
8
6
4
2
0
0 20 40 60 80 100 120 140 160
L = LEAD LENGTH TO
HEAT SINK
(SEE FIGURE 5)
T
L
,
L
E
A
D
T
E
M
P
E
R
A
T
U
R
E
(
¢J
)
300
200
100
50
30
20
10
50 20 40 60 80 100 120 140 160 180 200 22
0
RANGE
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
@
I
Z
T
(
V
O
L
T
S
)
Fig. 1-POWER TEMPERATURE DERATING CURVE Fig. 2-TEMPERATURE COEFFICIENT-RANGE FOR UNITS
6 TO 220 VOLTS
30
20
10
7
5
3
2
1
0.7
0.5
0.3
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
D
=
0
.
5
0
.2
0
.1
0
.
0
5
0
.
0
2
0
.
0
1
D
=
0
N
O
T
E
B
E
L
O
W
0
.
1
S
E
C
O
N
D
,
T
H
E
R
M
A
L
R
E
S
P
O
N
S
E
C
U
R
V
E
I
S
A
P
P
L
I
C
A
B
L
E
T
O
A
N
Y
L
E
A
D
L
E
N
G
T
H
(
L
)
D
U
T
Y
C
Y
C
L
E
,
D
=
t
1
/
t
2
S
I
N
G
L
E
P
U
L
S
E
£G
T
J
L
=
£K
J
L
(
t
)
P
P
K
R
E
P
E
T
I
T
I
V
E
P
U
L
S
E
S
£G
T
J
L
=
£K
J
L(
t
,
D
)
P
P
K
T
I
M
E
(
S
E
C
O
N
D
S
)
Fig. 3-TYPICAL THERMAL RESPONSE
40
30
20
10
0 0 0.2
0.4 0.6 0.8 1
MCUNTE ON 8.0mm
2
COPPER PADS TO
EACH TERMINAL
L
,
L
E
A
D
L
E
N
G
T
H
T
O
H
E
A
T
S
I
N
K
(
I
N
C
H
)
40
20
10
4
2
1
0.4
0.2
0.13 4 6 8 10 20 30 40 60 80 100 200
PW = 1ms*PW = 8.3ms*
PW = 1000ms*
SINE / SQUARE WAVE PW = 100ms*
N
O
M
I
N
A
L
V
Z
(
V
)
Fig. 4-TYPICAL THERMAL RESISTANCEFig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT VERSUS NOMINAL ZENER
VOLTAGE (SEE NOTE 3)
PD
, MAXIUMU POWER DISSIPATION (WATTS)
£c VZ, TEMPERATURE
C
OEFFICIENT (mA/¢J_@IZT
£c
JL(t,D), TRANSIENT THERMAL
RESISTANCE JUNCTION-TO-
LEAD(¢J/W)
JL, JUNCTION-TO -LEAD THERMAL
RESISTANCE (¢J/W)
IR
, PEAK SURGE CURRENT (AMPS)
SMCJ5348 thru SMCJ5388 MCC
www.mccsemi.com
RATING AND CHARACTERISTICS CURVES
ZENER VOLTAGE VERSUS ZENER CURRENT
(FIGURES 7,8, AND 9)
30
20
10
5
2
1
0.5
0.2
0.11 10 100 1000
VZ = 6.8V
VZ = 200V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6
1000
100
10
1
0.112345678910
T = 25¢J
T
C
= 25¢J
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 6-PEAK SURGE CURRENT VERSUS PULSE
WIDTH(SEE NOTE 3)Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 6.8 THRU 10 VOLTS
1
0
0
0
100
10
1
0.1
10 20 30 40
5
0
6
0
70
8
0
T = 25¢J
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
1000
100
10
1
0.1
80 100 120 140 160 180 200 220
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 8-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 11 THRU 75 VOLTSFig. 9-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 82 THRU 200 VOLTS
*** Data of Figure 3 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure. 5 be
exceeded
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
MCC
www.mccsemi.com
SMCJ5348 thru SMCJ5388
