January 2005
©2005 Fairchild Semiconductor Corporation FDN306P Rev D
FDN336P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
Features
• –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V
RDS(ON) = 0.27 Ω @ VGS = –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current – Continuous (Note 1a) –1.3 A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
336 FDN336P 7’’ 8mm 3000 units
FDN336P
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Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC-16 mV /o C
IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA
TJ = 55°C -10 µA
IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.4 -0.9 -1.5 V
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC3mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -1.3 A0.122 0.2 Ω
TJ =125°C 0.18 0.32
VGS = -2.5 V, I D = -1.1 A0.19 0.27
ID(ON) On-State Drain Current VGS = -4.5 V, VDS = -5 V -5 A
gFS Forward Transconductance VDS = -4.5 V, ID = -2 A 4S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -10 V, VGS = 0 V,
f = 1.0 MHz 330 pF
Coss Output Capacitance 80 pF
Crss Reverse Transfer Capacitance 35 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = -5 V, ID = -0.5 A,
VGS = -4.5 V, RGEN = 6 Ω7 15 ns
trTurn - On Rise Time 12 22 ns
tD(off) Turn - Off Delay Time 16 26 ns
tfTurn - Off Fall Time 5 12 ns
QgTotal Gate Charge VDS = -10 V, ID = - 2 A,
VGS = -4.5 V 3.6 5nC
Qgs Gate-Source Charge 0.8 nC
Qgd Gate-Drain Charge 0.7 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current -0.42 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note)-0.7 -1.2 V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDN336P Rev.D
a. 250oC/W when mounted on
a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on
a 0.001 in2 pad of 2oz Cu.
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FDN336P Rev.D
0 2 4 6 8 10
0.8
1
1.2
1.4
1.6
1.8
2
- I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -2.5 V
GS
D
R , NORMALIZED
DS(on)
-4.5V
-3.5V -4.0V
-3.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate
Figure 3. On-Resistance Variation
with Temperature.
0.5 11.5 22.5
0
1
2
3
4
-V , GATE TO SOURCE VOLTAGE (V)
- I , DRAIN CURRENT (A)
V = -5V
DS
GS
D
T = -55°C
J
125°C
25°C
Figure 5. Transfer Characteristics.
0.2 0.4 0.6 0.8 11.2 1.4
0.001
0.01
0.1
1
10
-V , BODY DIODE FORWARD VOLTAGE (V)
- I , REVERSE DRAIN CURRENT (A)
25°C
-55°C
V = 0V
GS
SD
S
T = 125°C
J
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = -4.5V
GS
I = -1.3A
D
0246810
0
0.1
0.2
0.3
0.4
0.5
- V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
I = -0.6A
D
T = 125°C
A
25°C
Figure 6. Body Diode Forward Voltage
Variation with Source
Current
and Temperature.
0 1 2 3 4 5
0
2
4
6
8
10
-V , DRAIN-SOURCE VOLTAGE (V)
- I , DRAIN-SOURCE CURRENT (A)
DS
D
-2.5V
-2.0V
-3.5V
-3.0V
V = -4.5V
GS
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FDN336P Rev.D
0.0001 0.001 0.01 0.1 110 100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =270°C/W
T = 25°C
θJA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
1 2
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0.1 0.2 0.5 1 2 5 10 20
40
100
200
400
700
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics (continued)
01234
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS
-15V
I = -1.3A
D
-10V
0.2 0.5 1 3 5 10 30
0.01
0.03
0.1
0.3
1
3
10
30
-V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
DS
V = -4.5V
SINGLE PULSE
R = 270°C/W
T = 25°C
θJA
GS
A
DC
1s
100ms
10ms
1ms
10s
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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