BF422 NPN EPITAXIAL SILICON TRANSIST OR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R201-063.B
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 250 V
Collector-Emitter Voltage VCEO 250 V
Emitter-base voltage VEBO 5 V
Collector current (DC) IC 50 mA
collector current (Peak) ICP 100 mA
base current IB 50 mA
Collector Power dissipation PC 625 mW
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: 1 Absolute maximum ratings are those values beyond which the device could be permane ntly damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 The device is guaranteed to meet performance specification within 0℃~70 ℃operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO V
CB= 200V, IE=0 10 nA
Emitter Cut-Off Current IEBO V
EB= 5V, IC=0 50 nA
DC current gain hFE V
CE=20V, IC=25mA 50
Collector-Emitter Saturation Voltage VCE(sat) IC= 30mA, IB= 5mA 0.6 V
Base-Emitter Voltage VBE V
CE=-20V, IC=25mA 0.75 V
Transition frequency fT V
CE= 10V , IC= 10mA 60 MHz
Reverse Transfer Capacitanc e Cre V
CB= 30V, IE=0, f=1MHz 1.6 pF