IGB15N65S5 Highspeedswitchingseriesfifthgeneration TRENCHSTOPTM5highspeedsoftswitchingIGBT FeaturesandBenefits: C HighspeedS5technologyoffering *Highspeedsmoothswitchingdeviceforhard&softswitching *VeryLowVCEsat,1.35Vatnominalcurrent *PlugandplayreplacementofpreviousgenerationIGBTs *650Vbreakdownvoltage *LowQG *Maximumjunctiontemperature175C *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C PotentialApplications: *EnergyGeneration -SolarStringInverter -SolarMicroInverter *IndustrialPowerSupplies -IndustrialSMPS -IndustrialUPS *MetalTreatment -Welding *EnergyDistribution -EnergyStorage *Infrastructure-Charge -Charger G E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IGB15N65S5 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 650V 15A 1.35V 175C G15ES5 PG-TO263-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Datasheet 2 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 650 V DCcollectorcurrent,limitedbyTvjmax Tc=25C Tc=100C IC 35.0 23.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A Turn off safe operating area VCE650V,Tvj175C,tp=1s - 60.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 30 V PowerdissipationTc=25C PowerdissipationTc=100C Ptot 105.0 52.5 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 1.40 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 65 K/W Thermal resistance, 6cm Cu on PCB junction - ambient Rth(j-a) - - 40 K/W ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=15.0A Tvj=25C Tvj=125C Tvj=175C - 1.35 1.50 1.60 1.70 - Gate-emitter threshold voltage VGE(th) IC=0.15mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25C Tvj=175C - 1400 50 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 25.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Datasheet 3 V V V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 930 - - 20 - - 4 - - 38.0 - nC - 7.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=15.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 14 - ns - 117 - ns - 30 - ns - 0.25 - mJ - 0.14 - mJ - 0.39 - mJ - 11 - ns - 8 - ns - 130 - ns - 32 - ns - 0.13 - mJ - 0.07 - mJ - 0.20 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=25.0,RG(off)=25.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. Tvj=25C, VCC=400V,IC=7.5A, VGE=0.0/15.0V, RG(on)=25.0,RG(off)=25.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 15 - ns - 140 - ns - 47 - ns - 0.32 - mJ - 0.21 - mJ - 0.53 - mJ - 11 - ns - 9 - ns - 155 - ns - 53 - ns - 0.18 - mJ - 0.11 - mJ - 0.29 - mJ IGBTCharacteristic,atTvj=150C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=150C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=25.0,RG(off)=25.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. Tvj=150C, VCC=400V,IC=7.5A, VGE=0.0/15.0V, RG(on)=25.0,RG(off)=25.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 5 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration 110 40 100 35 80 30 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 90 70 60 50 40 30 25 20 15 10 20 5 10 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[C] 100 125 150 175 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) 60 60 50 VGE=20V VGE=20V 18V 18V 50 16V 14V 12V 40 10V 8V 30 7V 6V 20 16V 14V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj175C) 12V 40 10V 8V 30 7V 6V 20 10 0 50 10 0 1 2 3 4 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25C) Datasheet 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=175C) 6 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration 60 3.0 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25C Tj=150C IC,COLLECTORCURRENT[A] 50 40 30 20 10 0 4 5 6 7 8 9 IC=3A IC=7.5A IC=15A IC=30A 2.5 2.0 1.5 1.0 0.5 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tvj,JUNCTIONTEMPERATURE[C] 0 10 20 30 40 50 100 10 1 60 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,RG=25,Dynamictestcircuitin Figure E) Datasheet 5 15 25 35 45 55 65 75 RG,GATERESISTOR[] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,IC=15A,Dynamictestcircuitin Figure E) 7 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration 1000 6.0 typ. 100 10 1 25 50 5.5 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 75 100 125 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 175 25 Tvj,JUNCTIONTEMPERATURE[C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=15A,RG=25,Dynamictestcircuitin Figure E) 100 125 150 0.8 Eoff Eon Ets Eoff Eon Ets 0.7 E,SWITCHINGENERGYLOSSES[mJ] 3.0 E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.15mA) 3.5 2.5 2.0 1.5 1.0 0.6 0.5 0.4 0.3 0.2 0.5 0.0 50 Tvj,JUNCTIONTEMPERATURE[C] 0.1 0 10 20 30 40 50 0.0 60 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,RG=25,Dynamictestcircuitin Figure E) Datasheet 5 15 25 35 45 55 65 75 RG,GATERESISTOR[] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,IC=15A,Dynamictestcircuitin Figure E) 8 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration 0.7 0.8 Eoff Eon Ets 0.7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.6 0.5 0.4 0.3 0.2 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Eoff Eon Ets 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[C] 250 300 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=15A,RG=25,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150C,VGE=0/15V, IC=15A,RG=25,Dynamictestcircuitin Figure E) 16 130V 520V Cies Coes Cres 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 100 10 4 2 0 0 5 10 15 20 25 30 35 1 40 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=15A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.04985429 0.5717284 0.6247318 0.1199425 0.01874488 i[s]: 4.7E-5 4.8E-4 3.4E-3 0.02214203 0.1932798 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) Datasheet 10 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration Package Drawing PG-TO263-3 MAX 4.57 0.25 0.85 1.15 0.65 1.40 9.45 7.90 10.31 8.60 MIN 4.30 0.00 0.65 0.95 0.33 1.17 8.51 7.10 9.80 6.50 2.54 5.08 2 14.61 2.29 0.70 1.00 16.05 9.30 4.50 10.70 3.65 1.25 Datasheet MAX 0.180 0.010 0.033 0.045 0.026 0.055 0.372 0.311 0.406 0.339 MIN 0.169 0.000 0.026 0.037 0.013 0.046 0.335 0.280 0.386 0.256 Z8B00003324 0 0 5 5 0.100 0.200 2 15.88 3.00 1.60 1.78 16.25 9.50 4.70 10.90 3.85 1.45 0.575 0.090 0.028 0.039 0.632 0.366 0.177 0.421 0.144 0.049 11 7.5mm 0.625 0.118 0.063 0.070 0.640 0.374 0.185 0.429 0.152 0.057 30-08-2007 01 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 12 V2.2 2018-01-11 IGB15N65S5 Highspeedswitchingseriesfifthgeneration RevisionHistory IGB15N65S5 Revision:2018-01-11,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-05-19 Final data sheet 2.2 2018-01-11 Remove of Pb-free symbol and editorial changes. Datasheet 13 V2.2 2018-01-11 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2018. AllRightsReserved. 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