Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2
www.infineon.com 2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
TRENCHSTOPTM5highspeedsoftswitchingIGBT
FeaturesandBenefits:
HighspeedS5technologyoffering
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQG
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
PotentialApplications:
•EnergyGeneration
-SolarStringInverter
-SolarMicroInverter
•IndustrialPowerSupplies
-IndustrialSMPS
-IndustrialUPS
•MetalTreatment
-Welding
•EnergyDistribution
-EnergyStorage
•Infrastructure–Charge
-Charger
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IGB15N65S5 650V 15A 1.35V 175°C G15ES5 PG-TO263-3
Datasheet 2 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet 3 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC35.0
23.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs - 60.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±30 V
PowerdissipationTc=25°C
PowerdissipationTc=100°C Ptot 105.0
52.5 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case Rth(j-c) - - 1.40 K/W
Thermal resistance, min. footprint
junction - ambient Rth(j-a) - - 65 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a) - - 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.35
1.50
1.60
1.70
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.15mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
1400
50
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=15.0A - 25.0 - S
Datasheet 4 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 930 -
Output capacitance Coes - 20 -
Reverse transfer capacitance Cres - 4 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=15.0A,
VGE=15V - 38.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 12 - ns
Rise time tr- 14 - ns
Turn-off delay time td(off) - 117 - ns
Fall time tf- 30 - ns
Turn-on energy Eon - 0.25 - mJ
Turn-off energy Eoff - 0.14 - mJ
Total switching energy Ets - 0.39 - mJ
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=25.0Ω,RG(off)=25.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 11 - ns
Rise time tr- 8 - ns
Turn-off delay time td(off) - 130 - ns
Fall time tf- 32 - ns
Turn-on energy Eon - 0.13 - mJ
Turn-off energy Eoff - 0.07 - mJ
Total switching energy Ets - 0.20 - mJ
Tvj=25°C,
VCC=400V,IC=7.5A,
VGE=0.0/15.0V,
RG(on)=25.0Ω,RG(off)=25.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) - 12 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 140 - ns
Fall time tf- 47 - ns
Turn-on energy Eon - 0.32 - mJ
Turn-off energy Eoff - 0.21 - mJ
Total switching energy Ets - 0.53 - mJ
Tvj=150°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=25.0Ω,RG(off)=25.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 11 - ns
Rise time tr- 9 - ns
Turn-off delay time td(off) - 155 - ns
Fall time tf- 53 - ns
Turn-on energy Eon - 0.18 - mJ
Turn-off energy Eoff - 0.11 - mJ
Total switching energy Ets - 0.29 - mJ
Tvj=150°C,
VCC=400V,IC=7.5A,
VGE=0.0/15.0V,
RG(on)=25.0Ω,RG(off)=25.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 6 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
100
110
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
Figure 3. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
10
20
30
40
50
60
VGE=20V
18V
16V
14V
12V
10V
8V
7V
6V
Figure 4. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
10
20
30
40
50
60
VGE=20V
18V
16V
14V
12V
10V
8V
7V
6V
Datasheet 7 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
45678910
0
10
20
30
40
50
60
Tj=25°C
Tj=150°C
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IC=3A
IC=7.5A
IC=15A
IC=30A
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG=25Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50 60
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 8. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=15A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65 75
1
10
100
1000
td(off)
tf
td(on)
tr
Datasheet 8 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=15A,RG=25Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.15mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG=25Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50 60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Eoff
Eon
Ets
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=15A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 15 25 35 45 55 65 75
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Eoff
Eon
Ets
Datasheet 9 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=15A,RG=25Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=15A,RG=25Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450 500
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Eoff
Eon
Ets
Figure 15. Typicalgatecharge
(IC=15A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
14
16
130V
520V
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
1
10
100
1000
Cies
Coes
Cres
Datasheet 10 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.04985429
4.7E-5
2
0.5717284
4.8E-4
3
0.6247318
3.4E-3
4
0.1199425
0.02214203
5
0.01874488
0.1932798
Datasheet 11 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
01
30-08-2007
Z8B00003324
0.039
0.000
0.026
0.335
0.013
0.037
MIN
0.169
0.046
0.280
0.090
0.386
8.60 0.3390.256
0.575
0.632
0.366
0.177
0.421
0.049
0.144
5.08
2.54
1.00
7.10
2.29
9.80
6.50
9.30
4.50
14.61
16.05
10.70
1.25
3.65
0.70
2
0.00
0.65
0.33
8.51
0.95
4.30
MIN
1.17
1.60
1.78
7.90
10.31
3.00
15.88
16.25
9.50
4.70
10.90
1.45
3.85
MAX
4.57
0.25
1.15
0.65
9.45
0.85
1.40
0.200
0.100
0.028
2
0.063
0.070
0.311
0.406
0.118
0.625
0.640
0.374
0.185
0.429
0.057
0.152
0.010
0.180
0.033
0.026
0.372
0.045
MAX
0.055
0
7.5mm
5
5
0
Package Drawing PG-TO263-3
Datasheet 12 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 13 V2.2
2018-01-11
IGB15N65S5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IGB15N65S5
Revision:2018-01-11,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-05-19 Final data sheet
2.2 2018-01-11 Remove of Pb-free symbol and editorial changes.
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