3White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE
V
IN
= 0 V, f = 1.0 MHz
50 pF
WE1-4 capacitance CWE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA) H1 20
CQFP G4 50
CQFP G2T 20
G1U 20
CS1-4 capacitance CCS
V
IN
= 0 V, f = 1.0 MHz
20 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
20 pF
Address input capacitance CAD
V
IN
= 0 V, f = 1.0 MHz
50 pF
This parameter is guaranteed by design but not tested.
TRUTH TABLEABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 Vcc+0.5 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.3 +0.8 V
Operating Temp. (Mil.) TA-55 +125 °C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Sym Conditions -15 -17 -20 -25 Units
Min Max Min Max Min Max Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 600 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 80 80 60 mA
Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 0.4 0.4 0.4 V
Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 2.4 2.4 2.4 V
Parameter Sym Conditions -35 -45 -55 Units
Min Max Min Max Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 60 60 60 mA
Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 0.4 0.4 V
Output High Voltage VOH IOH = -1.0mA, VCC = 4.5 2.4 2.4 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Characteristic Sym Conditions Min Typ Max Units
Lower Power Data Retention Voltage VCC VCC = 2.0V 2 - - V
Lower Power Data Retention Quiescent Current ICCDR CS ≥ VCC -0.2V - 1 4 mA
Chip Disable to Data Retention Time (1) TCDR VIN ≥ VCC -0.2V 0 - - ns
Operation Recovery Time (1) TRor VIN ≤ 0.2V TRC -ns
NOTE: Parameter guaranteed, but not tested.
LOWER POWER DATA RETENTION CHARACTERISTICS (L PRODUCT ONLY)
(TA = -55°C to +125°C), (TA = -40°C to +85°C)
WS128K32-XXX