1White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
HI-RELIABILITY PRODUCT
WS128K32-XXX
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595
■Commercial, Industrial and Military Temperature
Ranges
■5 Volt Power Supply
■Low Power CMOS
■TTL Compatible Inputs and Outputs
■Built in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
■Weight:
WS128K32-XG1UX - 5 grams typical
WS128K32-XG2TX - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX - 20 grams typical
■ All devices are upgradeable to 512Kx32
FEATURES
■Access Times of 15, 17, 20, 25, 35, 45, 55ns
■MIL-STD-883 Compliant Devices Available
■Packaging
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic
HIP (Package 400)
• 68 lead, 40mm CQFP (G4T), 3.56mm (0.140")
(Package 502).
• 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"),
(Package 509)
• 68 lead, 22.4mm Low Profile CQFP (G1U), 3.57mm
(0.140"), (Package 519)
■Organized as 128Kx32; User Configurable as 256Kx16
or 512Kx8
■Low Power Data Retention - only available in G2T
package type
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
NC
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
NC
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
TOP VIEW
BLOCK DIAGRAM
128K x 8
8
I/O
0-7
CS
1
128K x 8
8
I/O
8-15
2
128K x 8
8
I/O
16-23
3
128K x 8
8
I/O
24-31
4
A
0-16
OE
WE
CS
WE
CS
WE
CS
WE
1234
FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X
January 2001 Rev. 7
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
128K x 8
8
I/O
0-7
CS
1
128K x 8
8
I/O
8-15
2
128K x 8
8
I/O
16-23
3
128K x 8
8
I/O
24-31
4
A
0-16
OE
WE
CS
WE
CS
WE
CS
WE
1234
BLOCK DIAGRAM
FIG. 2 PIN CONFIGURATION FOR WS128K32-XG4TX
FIG. 3 PIN CONFIGURATION FOR WS128K32-XG2TX
AND WS128K32-XG1UX
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
2
OE
CS
4
NC
NC
NC
NC
NC
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
GND
CS
3
WE
A
6
A
7
A
8
A
9
A
10
V
CC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
OE
CS
2
NC
WE
2
WE
3
WE
4
NC
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
GND
CS
4
WE
1
A
6
A
7
A
8
A
9
A
10
V
CC
TOP VIEW
TOP VIEW
The White 68 lead G2T/G1U
CQFP fills the same fit and
function as the JEDEC 68 lead
CQFJ or 68 PLCC. But the
G2T/G1U has the TCE and
lead inspection advantage of
the CQFP form.
128K x 8
8
I/O
0-7
CS
1
128K x 8
8
I/O
8-15
CS
2
128K x 8
8
I/O
16-23
C S
3
128K x 8
8
I/O
24-31
C S
4
A
0
-
16
OE
WE
BLOCK DIAGRAM
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16 Address Inputs
WE Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
WS128K32-XXX
0.940"
3White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE
V
IN
= 0 V, f = 1.0 MHz
50 pF
WE1-4 capacitance CWE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA) H1 20
CQFP G4 50
CQFP G2T 20
G1U 20
CS1-4 capacitance CCS
V
IN
= 0 V, f = 1.0 MHz
20 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
20 pF
Address input capacitance CAD
V
IN
= 0 V, f = 1.0 MHz
50 pF
This parameter is guaranteed by design but not tested.
TRUTH TABLEABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 Vcc+0.5 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.3 +0.8 V
Operating Temp. (Mil.) TA-55 +125 °C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Sym Conditions -15 -17 -20 -25 Units
Min Max Min Max Min Max Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 600 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 80 80 60 mA
Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 0.4 0.4 0.4 V
Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 2.4 2.4 2.4 V
Parameter Sym Conditions -35 -45 -55 Units
Min Max Min Max Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 60 60 60 mA
Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 0.4 0.4 V
Output High Voltage VOH IOH = -1.0mA, VCC = 4.5 2.4 2.4 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Characteristic Sym Conditions Min Typ Max Units
Lower Power Data Retention Voltage VCC VCC = 2.0V 2 - - V
Lower Power Data Retention Quiescent Current ICCDR CS ≥ VCC -0.2V - 1 4 mA
Chip Disable to Data Retention Time (1) TCDR VIN ≥ VCC -0.2V 0 - - ns
Operation Recovery Time (1) TRor VIN ≤ 0.2V TRC -ns
NOTE: Parameter guaranteed, but not tested.
LOWER POWER DATA RETENTION CHARACTERISTICS (L PRODUCT ONLY)
(TA = -55°C to +125°C), (TA = -40°C to +85°C)
WS128K32-XXX
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
FIG. 4
AC TEST CIRCUIT
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
AC TEST CONDITIONS
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Symbol -15 -17 -20 -25 -35 -45 -55 Units
Read Cycle Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time tRC 15 17 20 25 35 45 55 ns
Address Access Time tAA 15 17 20 25 35 45 55 ns
Output Hold from Address Change tOH 000 0 0 0 0ns
Chip Select Access Time tACS 15 17 20 25 35 45 55 ns
Output Enable to Output Valid tOE 10 10 12 15 20 25 30 ns
Chip Select to Output in Low Z tCLZ1333 3 3 3 3ns
Output Enable to Output in Low Z tOLZ1000 0 0 0 0ns
Chip Disable to Output in High Z tCHZ112 12 12 12 20 20 20 ns
Output Disable to Output in High Z tOHZ112 12 12 12 20 20 20 ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Symbol -15 -17 -20 -25 -35 -45 -55 Units
Write Cycle Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time tWC 15 17 20 25 35 45 55 ns
Chip Select to End of Write tCW 14 14 15 20 25 30 45 ns
Address Valid to End of Write tAW 14 15 15 20 25 30 45 ns
Data Valid to End of Write tDW 10 10 12 15 20 25 25 ns
Write Pulse Width tWP 14 14 15 20 25 30 45 ns
Address Setup Time tAS 0000 0 0 0ns
Address Hold Time tAH 0000 0 0 0ns
Output Active from End of Write tOW13333 4 4 4ns
Write Enable to Output in High Z tWHZ110 10 12 15 20 25 25 ns
Data Hold Time tDH 0000 0 0 0ns
1. This parameter is guaranteed by design but not tested.
WS128K32-XXX /
EDI8C32128C
WS128K32-XXX
5White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS32K32-XHX
FIG. 5
TIMING WAVEFORM - READ CYCLE
FIG. 7
WRITE CYCLE - CS CONTROLLED
FIG. 6
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = VIL, WE = VIH)
tAA
tOH
tRC
DATA VALIDPREVIOUS DATA VALID
WS128K32-XXX
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
27.3 (1.075) ± 0.25 (0.010) SQ
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
25.4 (1.0) TYP
15.24 (0.600) TYP
0.76 (0.030) ± 0.13 (0.005)
4.34 (0.171)
MAX
3.81 (0.150)
± 0.13 (0.005)
2.54 (0.100)
TYP
25.4 (1.0) TYP
1.42 (0.056) ± 0.13 (0.005)
1.27 (0.050) TYP DIA
0.46 (0.018) ± 0.05 (0.002) DIA
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)
38 (1.50) TYP
4 PLACES
0.38 (0.015)
± 0.08 (0.003)
68 PLACES
1.27 (0.050)
TYP
5.1 (0.200)
± 0.25 (0.010)
4 PLACES
12.7 (0.500)
± 0.5 (0.020)
4 PLACES
0.25 (0.010)
± 0.05 (0.002)
PIN 1 IDENTIFIER Pin 1
39.6 (1.56) ± 0.38 (0.015) SQ 3.56 (0.140) MAX
WS128K32-XXX
7White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)
0.38 (0.015) ± 0.05 (0.002)
0.25 (0.010)
25.27 (0.995) ± 0.13 (0.005) SQ
1.27 (0.050)
23.88 (0.940) ± 0.25 (0.010) SQ
20.3 (0.800) REF
0.84 (0.033) REF
DETAIL A
SEE DETAIL "A"
3.56 (0.140) MAX
0.61 (0.024)
± 0.15 (0.006)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
The White 68 lead G1U CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G1U has the
TCE and lead inspection
advantage of the CQFP form.
0.940"
TYP
PACKAGE 509: 68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2T)
0.38 (0.015) ± 0.05 (0.002)
0.27 (0.011) ± 0.04 (0.002)
25.15 (0.990) ± 0.26 (0.010) SQ
1.27 (0.050) TYP
24.03 (0.946)
± 0.26 (0.010)
22.36 (0.880) ± 0.26 (0.010) SQ
20.3 (0.800) REF
4.57 (0.180) MAX
0.19 (0.007)
± 0.06 (0.002)
23.87
(0.940) REF
1.0 (0.040)
± 0.127 (0.005)
0.25 (0.010) REF
1° / 7°
R 0.25
(0.010)
DETAIL A
SEE DETAIL "A"
Pin 1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
0.940"
TYP
The White 68 lead G2T CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2T has the
TCE and lead inspection
advantage of the CQFP form.
8
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q= MIL-STD-883 Compliant
M= Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to +70°C
PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400)
G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)
G1U = 22.4mm Ceramic Quad Flat Pack, Low Provile CQFP (Package 519)
G4T = 40 mm Low Profile CQFP (Package 502)
ACCESS TIME (ns)
IMPROVEMENT MARK:
N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades
L = Low Power
ORGANIZATION, 128Kx32
User configurable as 256Kx16 or 512Kx8
SRAM
WHITE ELECTRONIC DESIGNS CORPORATION
W S 128K 32 X - XXX X X X
WS128K32-XXX
9White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
DEVICE TYPE SPEED PACKAGE SMD NO.
128K x 32 SRAM Module 55ns 66 pin HIP (H1) 5962-93187 05H4X
128K x 32 SRAM Module 45ns 66 pin HIP (H1) 5962-93187 06H4X
128K x 32 SRAM Module 35ns 66 pin HIP (H1) 5962-93187 07H4X
128K x 32 SRAM Module 25ns 66 pin HIP (H1) 5962-93187 08H4X
128K x 32 SRAM Module 20ns 66 pin HIP (H1) 5962-93187 09H4X
128K x 32 SRAM Module 17ns 66 pin HIP (H1) 5962-93187 10H4X
128K x 32 SRAM Module 15ns 66 pin HIP (H1) 5962-93187 11H4X
128K x 32 SRAM Module 55ns 68 lead CQFP Low Profile (G4T) 5962-95595 05HYX
128K x 32 SRAM Module 45ns 68 lead CQFP Low Profile (G4T) 5962-95595 06HYX
128K x 32 SRAM Module 35ns 68 lead CQFP Low Profile (G4T) 5962-95595 07HYX
128K x 32 SRAM Module 25ns 68 lead CQFP Low Profile (G4T) 5962-95595 08HYX
128K x 32 SRAM Module 20ns 68 lead CQFP Low Profile (G4T) 5962-95595 09HYX
128K x 32 SRAM Module 17ns 68 lead CQFP Low Profile (G4T) 5962-95595 10HYX
128K x 32 SRAM Module 15ns 68 lead CQFP Low Profile (G4T) 5962-95595 11HYX
128K x 32 SRAM Module 55ns 68 lead CQFP/J (G2T) 5962-95595 05HMX
128K x 32 SRAM Module 45ns 68 lead CQFP/J (G2T) 5962-95595 06HMX
128K x 32 SRAM Module 35ns 68 lead CQFP/J (G2T) 5962-95595 07HMX
128K x 32 SRAM Module 25ns 68 lead CQFP/J (G2T) 5962-95595 08HMX
128K x 32 SRAM Module 20ns 68 lead CQFP/J (G2T) 5962-95595 09HMX
128K x 32 SRAM Module 17ns 68 lead CQFP/J (G2T) 5962-95595 10HMX
128K x 32 SRAM Module 15ns 68 lead CQFP/J (G2T) 5962-95595 11HMX
128K x 32 SRAM Module 55ns 68 lead CQFP/J(G1U) 5962-95595 05H9X
128K x 32 SRAM Module 45ns 68 lead CQFP/J (G1U) 5962-95595 06H9X
128K x 32 SRAM Module 35ns 68 lead CQFP/J (G1U) 5962-95595 07H9X
128K x 32 SRAM Module 25ns 68 lead CQFP/J (G1U) 5962-95595 08H9X
128K x 32 SRAM Module 20ns 68 lead CQFP/J (G1U) 5962-95595 09H9X
128K x 32 SRAM Module 17ns 68 lead CQFP/J (G1U) 5962-95595 10H9X
128K x 32 SRAM Module 15ns 68 lead CQFP/J (G1U) 5962-95595 11H9X
