NLB-310-T3 - RF Micro Devices, Inc. (RFMD)

4-139

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT

Si Bi-CMOS SiGe HBT Si CMOS

InGaP/HBT GaN HEMT SiGe Bi-CMOS

RF OUT13

RF OUTRF IN

GND

MARKING - N6

NLB-310

CASCADABLE BROADBAND

GaAs MMIC AMPLIFIER DC TO 10GHz

• Narrow and Broadband Commercial and

Military Radio Designs

• Linear and Saturated Amplifiers

• Gain Stage or Driver Amplifiers for

MWRadio/Optical Des igns (PTP/PMP/

LMDS/UNII/VSAT/WLAN/Cellular/DWDM)

The NLB-310 casc adable broadband InGaP/G aAs MMIC

amplifier is a low-cost, high-perf ormance solution for gen-

eral purpose RF and micro wa ve amplifi cat ion ne eds . This

50Ω gain block is based on a reliable HBT proprietary

MMIC design, providing unsurpassed performance for

small-signal applications. Designed with an external bias

resistor, the NLB-310 provides flexibility and stability. The

NLB-310 is packaged in a low-cost, surf ace-mount plastic

package, providing ease of assembly for high-volume

tape-and-reel requirements.

• Reliable, Low-Cost HBT Design

• 12.7dB Gain, +12.6dBm P1dB@2GHz

• High P1dB of +14.9dBm@6.0GHz and

+13.1dBm@10.0GHz

• Single Power Supply Operation

•50Ω I/O Matched for High Freq. Use

NLB-310 Cascadabl e Broadb and GaAs M MIC Amplifier D C to

10GHz

NLB-310-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NLB-310-E Fully Assembled Evaluation Board

NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit

Rev A6 040409

N 5

4 M

Seating Plane

0.08 S

1 J

2K x 3L 3

0.1G

Gauge Plane

Symbol

0.535 REF.

MILLIMETERS INCHES

Min. Nom. Max. Min. Nom. Max.

0.021 REF.

2.39 2.54 2.69 0.094 0.100 0.106

0.436 0.510 0.586 0.017 0.020 0.023

2.19 2.34 2.49 0.086 0.092 0.098

1.91 2.16 2.41 0.075 0.085 0.095

1.32 1.52 1.72 0.052 0.060 0.068

0.10 0.15 0.20 0.004 0.006 0.008

0.535 0.660 0.785 0.021 0.026 0.031

0.05 0.10 0.15 0.002 0.004 0.006

0.65 0.75 0.85 0.025 0.029 0.033

0.85 0.95 1.05 0.033 0.037 0.041

4.53 4.68 4.83 0.178 0.184 0.190

4.73 4.88 5.03 0.186 0.192 0.198

NOTE: All dimensions are in millim eters, and

the dimensions in inches are for ref er ence only.

Package Style: Micro-X, 4-Pin, Plastic

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NLB-310

Rev A6 040409

Absolute Maximum Ratings

Parameter Rating Unit

RF Input Power +20 dBm

Power Dissipation 300 mW

De vice Current 70 mA

Channel Temperature 200 °C

Operating Temperature -45 to +85 °C

Storage Temperature -65 to +150 °C

Exceeding any one or a combination of these limits may cause permanent damage.

Parameter Specification Unit Condition

Min. Typ. Max.

Overall VD=+4.6V, ICC=50mA, Z0=50Ω, TA=+25°C

Small Signal Power Gain, S21 12.0 12.7 dB f=0.1GHz to 1.0GHz

10.7 dB f=1.0GHz to 4.0GHz

10.0 dB f=4.0GHz to 6.0GHz

8.5 9.7 dB f=6.0GHz to 10.0GHz

9.6 dB f=10 .0GHz to 12.0GH z

Gain Flatness, GF ±0.3 dB f=5.0GHz to 10.0GHz

Input VSWR 1.6:1 f=0.1GHz to 4.0GHz

1.75:1 f=4.0GHz to 7.0GHz

1.6:1 f=7.0GHz to 11.0GHz

Output VSWR 1.5:1 f=0.1GHz to 4.0GHz

1.8:1 f=4.0GHz to 7.0GHz

1.6:1 f=7.0GHz to 11.0GHz

Output Power @

-1dB Compression, P1dB 12.6 dBm f=2.0GHz

14.9 dBm f=6.0GHz

13.1 dBm f=10.0GHz

Noise Figure, NF 5.0 dB f=3.0GHz

Third Order Intercept, IP3 +28.9 dBm f=2.0GHz

+27.9 f=6.0GHz

Reverse Isolation, S12 -17 dB f=0.1GHz to 20.0GHz

De vice Voltage, VD 4.4 4.6 4.8 V

Gain Temperature Coefficient,

δGT/δT-0.0015 dB/°C

MTTF versus Temperature

@ ICC=50mA

Case Temperature 85 °C

Junction Temperature 125 °C

MTTF >1,000,000 hours

Thermal Resistance

θJC 174 °C/W JTTCASE

–

VDICC

⋅

---------------------------θJC °CWatt⁄()=

Caution! ESD sensitive device.

RF Micro Devices belie v es the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices doe s not

assume respon sibility for the use of the described product(s ).

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NLB-310

Rev A6 040409

Pin Function Description Interface Schematic

1RF IN

RF input pin. This pin is NOT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in

most applications. DC coupling of the input is not allowed, because this

will override the internal feedback loop and cause temperature instabil-

ity.

2GND

Ground connection. For best performance, keep traces physically short

and connect immediately to ground plane.

3RF OUT

RF output and bias pin. Biasing is accomplished with an external series

resistor and choke inductor to VCC. The resistor is selected to set the

DC current into this pin to a desired level. The resistor value is deter-

mined by the following equation:

Care should also be taken in the resistor selection to ensure that the

current into the part never exceeds maximum datasheet operating cur-

rent over the planned operating temperature. This means that a resistor

between the supply and this pin is always required, even if a supply

near 5.0V is available, to provide DC feedback to prevent thermal run-

away. Because DC is present on this pin, a DC blocking capacitor, suit-

able for the frequency of operation, should be used in most

applications. The supply side of the bias network should also be well

bypassed.

4GND

Same as pin 2.

VCC VDEVICE

–()

ICC

-------------------------------------------

RF OUT

RF IN

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NLB-310

Rev A6 040409

Typical Bias Configuration

Application notes related to biasing circuit, device footprint, and ther mal considerations are available on request.

Recommended Bias Resistor Values

Supply Voltage, VCC (V) 8 10 12 15 20

Bias Resistor, RCC (Ω) 60 100 140 200 300

C block

1 3

C block

In Out

L choke

(optional)

RCC

VCC

VDEVICE

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NLB-310

Rev A6 040409

Extended Frequency InGaP Amplifier Designer’s Tool Kit

NBB-X-K1

This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.

Each tool kit contains the following.

• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers

• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers

• 2 Broadband Evaluation Boards and High Frequency SMA Connectors

• Broadband Bias In structions and Specification Summary Index for ease of operation

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Tape and Reel Dimensions

All Dimensions in Millimeters

Ao = 7.0 MM

A1 = 1.8 MM

Bo = 7.0 MM

B1 = 1.3 MM

Ko = 2.1 MM

NOTES:

1. 10 sprocket hole pitch cumulative tolerance ±0.2.

2. Camber not to exceed 1 mm in 100 mm.

3. Material: PS+C.

4. Ao and Bo measured on a plane 0. 3 mm above the bottom of the pocket.

5. Ko m ea sured from a plane on the i nside bot tom of t h e pocket t o the surface of the carrie r.

6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.

SECTION A-A 8.0

Ao A1

3.0

5.0 MIN.

2.00 ± 0.05

SEE NOTE 6

4.0

SEE NOTE 1

R0.3 MAX.

0.30

± 0.05

All dimensions in mm

12.0

± 0.3

5.50 ± 0.05

SEE NOTE 6

1.75

R0.3 TYP.Ko

5.0 +0.1

-0.0

User Direction of Feed

LEAD 1

7.0 +0.079/-0.158

0.724 MAX

0.50 +0.08

3.0 REF

0.540 +0.020/-0.008

0.059 MIN

0.795 MIN

Plastic, Mi cro-X

SIZE (inches)

178 +0.25/-4.0

18.4 MAX

12.8 +2.0

76.2 REF

13.716 +0 .5/-0.2

1.5 MIN

20.2 MIN

SIZE (mm)

FLANGE B

Diameter

Thickness

Space B etween Flange

HUB

Outer Diamet er

Spindle Hole Diameter

Key Slit Width DKey Slit Diam eter

14.732 mm (7") REEL SYMBOLITEMS

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NLB-310

Rev A6 040409

Noise Figure versus Frequency at +25°C

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

0.0 2.0 4.0 6.0 8.0 10.0 12.0

Fr equency (GHz)

Noise Figure (dB)

Output P1dB versus Frequency Across Temperature

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

0.0 2.0 4.0 6.0 8.0 10.0 12.0

Fr eq uency (GHz)

Output P1dB (dBm)

25°C

40°C

85°C

S11 versus Frequency, Over Temperature

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0

Fr equency (GHz)

S11 (dB)

S11, + 2 5° C

S11, -40°C

S11, + 8 5° C

S21 versus Frequency, Over Temperature

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0

Fr equency (GHz)

S21 (dB)

S21, +25°C

S21, - 4 0° C

S21, +85°C

S12 versus Frequency, Over Temperature

-20.0

-18.0

-16.0

-14.0

-12.0

-10.0

-8.0

-6.0

-4.0

-2.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0

Fr equency (GHz)

S12 (dB)

S12, + 2 5° C

S12, - 40° C

S12, + 8 5° C

S22 versus Frequency, Over Temperature

-40.0

-35.0

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0

Fre quency (GHz)

S22 (dB)

S22, + 2 5° C

S22, - 40° C

S22, + 8 5° C

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Note: The s-pa ra meter gain results shown include device performance as well as eval uation board and connector los s

variations. The insertion losses of th e evaluation board and connectors are as follows:

1GHz to 4GHz=-0.06dB

5GHz to 9GHz=-0.22dB

10GHz to 14GHz=-0.50dB

15GHz to 20GHz=-1.08dB