SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
1
FEATURES
• UltraHighSpeedAsynchronousOperation
• FullyStatic,NoClocks
• Multiplecenterpowerandgroundpinsforimproved
noiseimmunity
• EasymemoryexpansionwithCE\andOE\
options
• AllinputsandoutputsareTTL-compatible
• Single+5VPowerSupply+/-10%
• DataRetentionFunctionalityTesting
• CostEfcientPlasticPackaging
• ExtendedTestingOver-55ºCto+125ºCforplastics
• Plastic36pinPSOJisfullycompatiblewiththe
Ceramic36pinSOJandofferedinleadfreenish
• TSOPIIinCopperLeadFrameforSuperiorThermal
Performance2
• RoHSCompliantOptionsAvailable
OPTIONS MARKING
• Timing
12nsaccess -12
15nsaccess -15
17nsaccess -17
20nsaccess -20
25nsaccess -25
35nsaccess -35
45nsaccess -45
• OperatingTemperatureRanges
FullMilitary(-55oCto+125oC) /883C
Military(-55oCto+125oC) XT
Industrial(-40oCto+85oC) IT
• Package(s)
CeramicLCC EC
CeramicFlatpack F
PlasticSOJ(LeadFree)1 DJ
CeramicSOJ(attachedformedlead) ECJ
CeramicSOJ SOJ
PlasticTSOPII(44pin,400mil) DGC2
PlasticTSOPII(RoHSCompliant) DGCR2
• 2Vdataretention/lowpower3L
Notes:
1.Pbnishalsoavailable,contactfactory
2.ContactfactoryforCopperLeadFrameProducts
3.NotavailableforpartsinDGC&DGCRpackages.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD5962-95600
•SMD5962-95613
•MIL-STD-883
512K x 8 SRAM
HIGH SPEED SRAM with
REVOLUTIONARY PINOUT
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
FEATURES
• Ultra High Speed Asynchronous Operation
• Fully Static, No Clocks
• Multiple center power and ground pins for improved
noise immunity
• Easy memory expansion with CE\ and OE\
options
• All inputs and outputs are TTL-compatible
• Single +5V Power Supply +/- 10%
• Data Retention Functionality Testing
• Cost Efficient Plastic Packaging
• Extended Testing Over -55ºC to +125ºC for plastics
• Plastic 36 pin PSOJ is fully compatible with the
Ceramic 36 pin SOJ and offered in lead free finish
• 3.3V Future Offering
OPTIONS MARKING
• Timing
12ns access -12
15ns access -15
17ns access -17
20ns access -20
25ns access -25
35ns access -35
45ns access -45
• Operating Temperature Ranges
Full Military (-55oC to +125oC) /883C
Military (-55oC to +125oC) XT
Industrial (-40oC to +85oC) IT
• Package(s)
Ceramic LCC EC
Ceramic Flatpack F
Plastic SOJ (Lead Free)* DJ
Ceramic SOJ (attached formed lead) ECJ
Ceramic SOJ SOJ
* Pb finish also available, contact factory
• 2V data retention/low power L
PIN ASSIGNMENT
(Top View)
36-Pin SOJ (DJ, ECJ & SOJ)
36-Pin CLCC (EC)
GENERAL DESCRIPTION
The AS5C512K8 is a high speed SRAM. It offers flexibility in
high-speed memory applications, with chip enable (CE\) and output
enable (OE\) capabilities. These features can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +5V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5C512K8DJ offers the convenience and reliability of the
AS5C512K8 SRAM and has the cost advantage of a durable plastic.
The AS5C512K8DJ is footprint compatible with 36 pin CSOJ
package of the SMD 5692-95600.
36-Pin Flat Pack (F)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-95600
•SMD 5962-95613
•MIL-STD-883
512K x 8 SRAM
HIGH SPEED SRAM with
REVOLUTIONARY PINOUT
For more products and information
please visit our web site at
www.austinsemiconductor.com
44-Pin TSOPII (DGC & DGCR)
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
03/04/2008
IS61C5128AL/AS IS64C5128AL/AS
PIN DESCRIPTIONS
A0-A18 Address Inputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Bidirectional Ports
V
DD
Power
GND Ground
NC No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A0
A1
A2
A3
A4
CE
I/O0
I/O1
V
DD
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
V
DD
I/O5
I/O4
A14
A13
A12
A11
A10
NC
HIGH SPEED (IS61/64C5128AL) PIN CONFIGURATION
36-Pin SOJ (400-mil) 44-Pin TSOP (Type II)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A0
A1
A2
A3
A4
CE
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
NC
NC
NC
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
NC
NC
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
FEATURES
• Ultra High Speed Asynchronous Operation
• Fully Static, No Clocks
• Multiple center power and ground pins for improved
noise immunity
• Easy memory expansion with CE\ and OE\
options
• All inputs and outputs are TTL-compatible
• Single +5V Power Supply +/- 10%
• Data Retention Functionality Testing
• Cost Efficient Plastic Packaging
• Extended Testing Over -55ºC to +125ºC for plastics
• Plastic 36 pin PSOJ is fully compatible with the
Ceramic 36 pin SOJ and offered in lead free finish
• 3.3V Future Offering
OPTIONS MARKING
• Timing
12ns access -12
15ns access -15
17ns access -17
20ns access -20
25ns access -25
35ns access -35
45ns access -45
• Operating Temperature Ranges
Full Military (-55oC to +125oC) /883C
Military (-55oC to +125oC) XT
Industrial (-40oC to +85oC) IT
• Package(s)
Ceramic LCC EC
Ceramic Flatpack F
Plastic SOJ (Lead Free)* DJ
Ceramic SOJ (attached formed lead) ECJ
Ceramic SOJ SOJ
* Pb finish also available, contact factory
• 2V data retention/low power L
PIN ASSIGNMENT
(Top View)
36-Pin SOJ (DJ, ECJ & SOJ)
36-Pin CLCC (EC)
GENERAL DESCRIPTION
The AS5C512K8 is a high speed SRAM. It offers flexibility in
high-speed memory applications, with chip enable (CE\) and output
enable (OE\) capabilities. These features can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +5V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5C512K8DJ offers the convenience and reliability of the
AS5C512K8 SRAM and has the cost advantage of a durable plastic.
The AS5C512K8DJ is footprint compatible with 36 pin CSOJ
package of the SMD 5692-95600.
36-Pin Flat Pack (F)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-95600
•SMD 5962-95613
•MIL-STD-883
512K x 8 SRAM
HIGH SPEED SRAM with
REVOLUTIONARY PINOUT
For more products and information
please visit our web site at
www.austinsemiconductor.com
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
2
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
TRUTH TABLE
MODE OE\ CE\ WE\ I/O POWER
STANDBY X H X HIGH-Z STANDBY
READ L L H Q ACTIVE
NOT SELECTED H L H HIGH-Z ACTIVE
WRITE X L L D ACTIVE
SNOITCNUFNIP
81A-0AstupnIsserddA
\EWelbanEetirW
\ECelbanEpihC
\EOelbanEtuptuO
O/I
0
O/I-
7
stuptuO/stupnIataD
V
CC
rewoP
V
SS
dnuorG
CNnoitcennoCoN
X = Don’t Care
VCC GND
INPUT BUFFER
4,194,304-BIT
MEMORY ARRAY
1024 ROWS X
4096 COLUMNS
I/O
CONTROLS
COLUMN DECODER
ROW DECODER
*POWER
DOWN
CE\
OE\
WE\
DQ8
DQ1
A0-A18
*On the low voltage Data Retention option.
GENERAL DESCRIPTION
 TheAS5C512K8isahighspeedSRAM.Itoffersexibilityin
high-speedmemoryapplications,withchipenable(CE\)andoutput
enable (OE\) capabilities. These features can place the outputs in
High-Zforadditionalexibilityinsystemdesign.
Writingtothesedevicesisaccomplishedwhenwriteenable(WE\)
andCE\inputsarebothLOW.ReadingisaccomplishedwhenWE\
remainsHIGHandCE\andOE\goLOW.
Asaoption,thedevicecanbesuppliedofferingareducedpower
standbymode,allowingsystemdesignerstomeetlowstandbypower
requirements.Thisdeviceoperatesfromasingle+5Vpowersupply
andallinputsandoutputsarefullyTTL-compatible.
TheAS5C512K8DJofferstheconvenienceandreliabilityofthe
AS5C512K8SRAMandhasthecostadvantageofadurableplastic.
TheAS5C512K8DJisfootprintcompatiblewith36pinCSOJpack-
ageoftheSMD5692-95600.TSOPIIwithcopperleadframeoffers
superiorthermalperformance.
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
3
ABSOLUTE MAXIMUM RATINGS*
VoltageonVccSupplyRelativetoVss
Vcc....................................................................-.5Vto+7.0V
StorageTemperature(Plastic)......................-65°Cto+150°C
StorageTemperature(Ceramic)...................-55°Cto+125°C
ShortCircuitOutputCurrent(perI/O)…........................20mA
VoltageonanyPinRelativetoVss.................-.5VtoVcc+1V
MaximumJunctionTemperature**..............................+150°C
PowerDissipation................................................................1W
*Stressesgreaterthanthoselistedunder“AbsoluteMaximum
Ratings”maycausepermanentdamagetothedevice.This
isastressratingonlyandfunctionaloperationofthedevice
attheseoranyotherconditionsabovethoseindicatedinthe
operationsectionofthisspecicationisnotimplied.Exposure
toabsolutemaximumratingconditionsforextendedperiods
mayaffectreliability.
**Junctiontemperaturedependsuponpackagetype,cycletime,
loading,ambienttemperatureandairow,andhumidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%)
DESCRIPTION SYM -12 -15 -17 -20 -25 -35 -45 UNITS NOTES
ICCSP 100 100 100 90 90 80 70 mA 3
"L" Version Only ICCLP 75 75 75 65 65 60 50 mA
ISBTSP 20 20 20 20 20 20 20 mA
"L" Version Only ISBTLP 10 10 10 10 10 10 10 mA
ISBCSP 15 15 15 15 15 15 15 mA
"L" Version Only ISBCLP 5555555 mA
MAX
Power Supply
Current: Standby
CONDITIONS
WE\=CE\<VIL; Vcc = MAX
f = MAX = 1/tRC
Outputs Open
CE\ > VIH, All other inputs < VIL,
Vcc = MAX, f = 0,
Outputs Open
CE\ > Vcc -0.2V; Vcc = MAX
VIN<Vss +0.2V or
VIN>Vcc -0.2V; f = 0
Power Supply
Current: Operating
DESCRIPTION CONDITIONS SYM MIN MA
X
UNITS NOTES
Input High (Logic 1) Voltage VIH 2.2 Vcc +0.5 V 1
Input Low (Logic 0) Voltage VIL -0.5 0.8 V 1, 2
Input Leakage Current 0V < VIN < Vcc ILI -2 2 μA
Output Leakage Current Output(s) Disabled
0V < VOUT < Vcc ILO
-2 2 μA
Output High Voltage IOH = -4.0 mA VOH 2.4 --- V 1
Output Low Voltage IOL = 8 mA VOL --- 0.4 V 1
Supply Voltage VCC 4.5 5.5 V 1
CAPACITANCE
PARAMETE
R
CONDITIONS SYMBOL MA
X
UNITS NOTES
Input Capacitance CI8 pF 4
Output Capactiance Co 10 pF 4
TA = 25oC, f = 1MHz
VIN = 0
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < TA < +125oC or -40oC to +85oC; Vcc = 5V +10%)
MIN MA
X
MIN MA
MIN MA
X
MIN MA
X
MIN MA
X
MIN MA
MIN MA
X
READ CYCLE
Read Cycle Time tRC 12 15 17 20 25 35 45 ns
Address Access Time tAA 12 15 17 20 25 35 45 ns
Chip Enable Access Time tACE 12 15 17 20 25 35 45 ns
Output Hold From Address Change tOH
2222222 ns
Chip Enable to Output in Low-Z tLZCE 2 2 2 2 2 2 2 ns 4, 6, 7
Chip Disable to Output in High-Z tHZCE 0 6.5 0 7 0 8 0 8 0 10 0 15 0 20 ns 4, 6, 7
Output Enable Acess Time tAOE 7 8 8 10 12 15 25 ns
Output Enable to Output in Low-Z tLZOE 0 0 0 0 0 0 0 ns 4, 6, 7
Output Disable to Output in High-Z tHZOE 0 6.5 0 7 0 8 0 8 0 10 0 15 0 20 ns 4, 6, 7
WRITE CYCLE
WRITE Cycle Time tWC 12 15 17 20 25 35 45 ns
Chip Enable to End of Write tCW 12 15 16 17 20 30 35 ns
Address Valid to End of Write tAW 12 15 16 17 20 30 35 ns
Address Setup Time tAS
0000000 ns
Address Hold From End of Write tAH
0000000 ns
WRITE Pulse Width tWP 12 15 16 17 20 30 35 ns
Data Setup Time tDS 6.5 7 9 10 12 20 25 ns
Data Hold Time tDH
0000000 ns
Write Disable to Output in Low-Z tLZWE 0 0 0 0 0 0 0 ns 4, 6, 7
Write Enable to Output in High-Z tHZWE 0 6.5 0 7 0 8 0 8 0 10 0 15 0 20 ns 4, 6, 7
-15 UNITS NOTESSYM -45
-12
DESCRIPTION -25-20 -35
-17
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
5
Inputpulselevels...............................................Vssto3.0V
Inputriseandfalltimes..................................................3ns
Inputtimingreferencelevels........................................1.5V
Outputreferencelevels..................................................1.5V
Outputload.................................................SeeFigures1
and2
NOTES
1. AllvoltagesreferencedtoVSS(GND).
2. -2Vforpulsewidth<20ns
3. ICCisdependentonoutputloadingandcyclerates.
4. Thisparameterisguaranteedbutnottested.
5. Testconditionsasspeciedwiththeoutputloading
asshowninFig.1unlessotherwisenoted.
6. tLZCE,tLZWE,tLZOE,tHZCE,tHZOEandtHZWE
arespeciedwithCL=5pFasinFig.2.Transitionis
measured±200mVfromsteadystatevoltage.
7. Atanygiventemperatureandvoltagecondition,
t
HZCEislessthantLZCE,andtHZWEislessthan
t
LZWE.
8. WE\isHIGHforREADcycle.
9. Deviceiscontinuouslyselected.Chipenablesand
outputenablesareheldintheiractivestate.
10. Addressvalidpriorto,orcoincidentwith,latest
occurringchipenable.
11.t
RC=ReadCycleTime.
12. Chipenableandwriteenablecaninitiateand
terminateaWRITEcycle.
13. Outputenable(OE\)isinactive(HIGH).
14. Outputenable(OE\)isactive(LOW).
15.ASIdoesnotwarrantfunctionalitynorreliabilityof
anyproductinwhichthejunctiontemperature
exceeds150°C.Careshouldbetakentolimitpowerto
acceptablelevels.
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
AC TEST CONDITIONS
DESCRIPTION SYM MIN MA
X
UNITS NOTES
Vcc for Retention Data VDR 2V
Data Retention Current Vcc = 2.0V ICCDR 2 mA
Chip Deselect to Data tCDR 0 ns 4
Operation Recovery Time tR10 ms 4, 11
CONDITIONS
CE\ > VCC -0.2V
VIN > VCC -0.2 or 0.2V
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
167 ohms167 ohms
1.73V1.73V
C=5pFC=30pF
QQ
Input pulse levels ...................................................... Vss to 3.0V
Input rise and fall times ......................................................... 3ns
Input timing reference levels ............................................... 1.5V
Output reference levels ........................................................ 1.5V
Output load ................................................. See Figures 1 and 2
NOTES
1. All voltages referenced to VSS (GND).
2. -2V for pulse width < 20ns
3. ICC is dependent on output loading and cycle rates.
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV from steady state voltage.
7. At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than
tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. Chip enable and write enable can initiate and
terminate a WRITE cycle.
13. Output enable (OE\) is inactive (HIGH).
14. Output enable (OE\) is active (LOW).
15. ASI does not warrant functionality nor reliability of
any product in which the junction temperature
exceeds 150°C. Care should be taken to limit power to
acceptable levels.
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
AC TEST CONDITIONS
DESCRIPTION SYM MIN MA
X
UNITS NOTES
Vcc for Retention Data VDR 2V
Data Retention Current Vcc = 2.0V ICCDR 800 uA
Chip Deselect to Data tCDR 0 ns 4
Operation Recovery Time tR10 ms 4, 11
CONDITIONS
CE\ > VCC -0.2V
VIN > VCC -0.2 or 0.2V
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
6
LOW VCC DATA RETENTION WAVEFORM
READ CYCLE NO. 18, 9
(Address Controlled, CE\ = OE\ = VIL, WE\ = VIH)
READCYCLENO.22
(WE\=VIH)
Don’t Care
Undened
DATARETENTIONMODE
4.5V 4.5V
VDR>2V
VDR
tCDR tR
VCC
CE\
VIH-
VIL-
ADDRESS
tRC
tOH
tAA
PreviousDataValid DataValid
I/O,DATAIN
&OUT
VALID
ADDRESS tRC
tAOE
CE\
tLZOE
tACE
DataValid
High-Z
tHZOE
tHZCE
tPD
I/O,DATAIN
&OUT
Icc
tLZCE
tPU
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
7
WRITE CYCLE NO. 112
(CE Controlled)
WRITE CYCLE NO. 212, 13
(Write Enabled Controlled)
ADDRESS
tWC
tCW
CE\
tAW
DataValid
tAH
tAS
I/O,DATAOUT
tWP1
tDS tDH
WE\
I/O,DATAIN
High-Z High-Z
ADDRESS
tWC
tCW
CE\
tAW
DataValid
tAH
tAS
I/O,DATAOUT
tWP1
tDH
WE\
I/O,DATAIN
High-Z High-Z
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
8
WRITE CYCLE NO. 37,12, 14
(WE Controlled)
ADDRESS
tWC
tCW
CE\
tAW
DataValid
tAH
tAS
DATAOUT DataUndened
tWP2
tDS tDH
tHZWE tLZWE
WE\
DATAIN
High-Z
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
9
44-Pin TSOPII (Package Designators DGC & DGCR)
MECHANICAL DEFINITIONS
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
06/18/03
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
PACKAGING INFORMATION
Plastic TSOP
Package Code: T (Type II)
D
SEATING PLANE
b
eC
1N/2
N/2+1N
E1
A1
A
E
Lα
ZD
.
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
Plastic TSOP (T - Type II)
Millimeters Inches Millimeters Inches Millimeters Inches
Symbol Min Max Min Max Min Max Min Max Min Max Min Max
Ref. Std.
No. Leads (N) 32 44 50
A — 1.20 — 0.047 — 1.20 — 0.047 — 1.20 — 0.047
A1 0.05 0.15 0.002 0.006 0.05 0.15 0.002 0.006 0.05 0.15 0.002 0.006
b 0.30 0.52 0.012 0.020 0.30 0.45 0.012 0.018 0.30 0.45 0.012 0.018
C 0.12 0.21 0.005 0.008 0.12 0.21 0.005 0.008 0.12 0.21 0.005 0.008
D 20.82 21.08 0.820 0.830 18.31 18.52 0.721 0.729 20.82 21.08 0.820 0.830
E1 10.03 10.29 0.391 0.400 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405
E 11.56 11.96 0.451 0.466 11.56 11.96 0.455 0.471 11.56 11.96 0.455 0.471
e 1.27 BSC 0.050 BSC 0.80 BSC 0.032 BSC 0.80 BSC 0.031 BSC
L 0.40 0.60 0.016 0.024 0.41 0.60 0.016 0.024 0.40 0.60 0.016 0.024
ZD 0.95 REF 0.037 REF 0.81 REF 0.032 REF 0.88 REF 0.035 REF
α0° 5° 0° 5° 0° 5° 0° 5° 0° 5° 0° 5°
Symbol
Ref.Std. Min Max Min Max
A‐ 1.20 ‐ 0.047
A1 0.05 0.15 0.002 0.006
b 0.30 0.45 0.012 0.018
C 0.12 0.21 0.005 0.008
D 18.31 18.52 0.721 0.729
E1 10.03 10.29 0.395 0.405
E11.56 11.96 0.455 0.471
e
L 0.41 0.60 0.016 0.024
ZD
α0o5o0o5o
Millimeters Inches
0.81REF
0.80BSC 0.032BSC
0.032REF
N=44 Leads
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
10
MECHANICAL DEFINITIONS*
Micross Case #210 (Package Designator EC)
SMD 5962-95600, Case Outline N
D
E
Pin1identierarea
L2
L
eB
R
D1
1
36
*All measurements are in inches.
A
A1
P
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #210 (Package Designator EC)
SMD 5962-95600, Case Outline N
D
E
Pin 1 identifier area
L2
L
eB
R
D1
1
36
MIN MAX
A 0.080 0.100
A1 0.054 0.066
B 0.022 0.028
D 0.910 0.930
D1 0.840 0.860
E 0.445 0.460
e
L
L2 0.115 0.135
P --- 0.006
R0.009 TYP
SYMBOL
0.100 TYP
SMD SPECIFICATIONS
0.050 BSC
*All measurements are in inches.
A
A1
P
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
11
MECHANICAL DEFINITIONS*
Micross Case #307 (Package Designator F)
SMD 5962-95600, Case Outline T
Bottom View
36 1
c
E2
A
Q
*All measurements are in inches.
D
e
b
Top View
D1
S
E
L
Pin1identierarea
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #307 (Package Designator F)
SMD 5962-95600, Case Outline T
Bottom View
36 1
c
E2
A
Q
MIN MAX
A 0.096 0.125
b 0.015 0.022
c 0.003 0.009
D 0.910 0.930
D1 0.840 0.860
E 0.505 0.515
E2 0.385 0.397
e
L 0.250 0.370
Q 0.020 0.045
SYMBOL
0.050 BSC
SMD SPECIFICATIONS
*All measurements are in inches.
D
e
b
Top View
D1
S
E
L
Pin 1 identifier area
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
12
MECHANICAL DEFINITIONS*
Micross Case Package Designator: SOJ
SMD 5962-95600, Case Outline M
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
13
MECHANICAL DEFINITIONS*
Micross Case #503 (Package Designator ECJ)
SMD 5962-95600, Case Outline M
*All measurements are in inches.
A
A1
e
b
P
A2
E2
D
E
D1
L2 L
TYP
136
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #503 (Package Designator ECJ)
SMD 5962-95600, Case Outline M
*All measurements are in inches.
A
A1
e
b
P
A2
E2
MIN MAX
A 0.140 0.160
A1 0.054 0.075
A2 0.025 0.063
b 0.019 0.028
D 0.910 0.939
D1 0.840 0.860
E 0.434 0.460
E2 0.374 0.410
e
L 0.050 0.070
L2 0.115 0.135
P --- 0.004
SYMBOL
SMD SPECIFICATIONS
0.050 BSC
D
E
D1
L2 L
TYP
136
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
14
*All measurements are in inches.
MECHANICAL DEFINITIONS*
Micross Case #903 (Package Designator DJ)
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 7.0 05/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
Austin Semiconductor, Inc.
*All measurements are in inches.
MECHANICAL DEFINITIONS*
ASI Case #903 (Package Designator DJ)
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
15
ORDERING INFORMATION
*AVAILABLE PROCESSES
IT=IndustrialTemperatureRange -40oCto+85oC
XT=ExtendedTemperatureRange -55oCto+125oC
883C=FullMilitaryProcessing -55oCto+125oC
**OPTIONS DEFINTIONS
L=2VDataRetention/LowPower(ConsultFactory)
**LVersionisnotcurrentlyanavailableoptionforpartsinDGC&DGCRpackage.
36-Pin Ceramic Flat Pac
k
36-Pin Ceramic SOJ Package
Device Number Package
Type
Speed
ns Options** Process Device Number Package
Type
Speed
ns Options** Process
A
S5C512K8 F -12 L
/
*
A
S5C512K8 SOJ [ECJ] -12 L
/
*
A
S5C512K8 F -15 L
/
*
A
S5C512K8 SOJ [ECJ] -15 L
/
*
A
S5C512K8 F -17 L
/
*
A
S5C512K8 SOJ [ECJ] -17 L
/
*
A
S5C512K8 F -20 L
/
*
A
S5C512K8 SOJ [ECJ] -20 L
/
*
A
S5C512K8 F -25 L
/
*
A
S5C512K8 SOJ [ECJ] -25 L
/
*
A
S5C512K8 F -30 L
/
*
A
S5C512K8 SOJ [ECJ] -30 L
/
*
A
S5C512K8 F -45 L
/
*
A
S5C512K8 SOJ [ECJ] -45 L
/
*
36-Pin CLCC 36-Pin Plastic SOJ
Device Number Package
Type
Speed
ns Options** Process Device Number Package
Type
Speed
ns Options** Process
A
S5C512K8 EC -12 L
/
*
A
S5C512K8 DJ
+
-12 L
/
*
A
S5C512K8 EC -15 L
/
*
A
S5C512K8 DJ
+
-15 L
/
*
A
S5C512K8 EC -17 L
/
*
A
S5C512K8 DJ
+
-17 L
/
*
A
S5C512K8 EC -20 L
/
*
A
S5C512K8 DJ
+
-20 L
/
*
A
S5C512K8 EC -25 L
/
*
A
S5C512K8 DJ
+
-25 L
/
*
A
S5C512K8 EC -30 L
/
*
A
S5C512K8 DJ
+
-30 L
/
*
A
S5C512K8 EC -45 L
/
*
A
S5C512K8 DJ
+
-45 L
/
*
44-Pin TSOPII - Sn/Pb Lead Finish 44-Pin TSOPII - RoHS Compliant - NiPdAu Lead Finish
Device Number Package
T
yp
e
Speed
ns Process Device Number Package
T
yp
e
Speed
ns Process
A
S5C512K8 DGC -12
/
*
A
S5C512K8 DGCR -12
/
*
A
S5C512K8 DGC -15
/
*
A
S5C512K8 DGCR -15
/
*
EXAMPLE: AS5C512K8DGC-12/XT EXAMPLE: AS5C512K8DGCR-12/IT
+Lead Free (Pb finish is also available, consult factory)
EXAMPLE: AS5C512K8F-25/XT
EXAMPLE: AS5C512K8EC-35/XT
EXAMPLE: AS5C512K8ECJ-15/IT
EXAMPLE: AS5C512K8DJ-20/XT
*Consult Factory for ECJ package option, SOJ is new standard.
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
16
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE
FOR SMD 5962-95600*
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Micross Part # SMD Part # Micross Part # SMD Part #
AS5C512K8EC-12L 5962-9560015QNA AS5C512K8ECJ-12L 5962-9560015QMA
AS5C512K8EC-12L 5962-9560016QNA AS5C512K8ECJ-12L 5962-9560016QMA
AS5C512K8EC-15 5962-9560014QNA AS5C512K8ECJ-15 5962-9560014QMA
AS5C512K8EC-15L 5962-9560013QNA AS5C512K8ECJ-15L 5962-9560013QMA
AS5C512K8EC-20L 5962-9560012QNA AS5C512K8ECJ-20L 5962-9560012QMA
AS5C512K8EC-25L 5962-9560011QNA AS5C512K8ECJ-25L 5962-9560011QMA
AS5C512K8EC-35L 5962-9560010QNA AS5C512K8ECJ-35L 5962-9560010QMA
AS5C512K8EC-45L 5962-9560009QNA AS5C512K8ECJ-45L 5962-9560009QMA
AS5C512K8EC-20 5962-9560004MNA AS5C512K8ECJ-20 5962-9560004MMA
AS5C512K8EC-20L 5962-9560008MNA AS5C512K8ECJ-20L 5962-9560008MMA
AS5C512K8EC-25 5962-9560003MNA AS5C512K8ECJ-25 5962-9560003MMA
AS5C512K8EC-25L 5962-9560007MNA AS5C512K8ECJ-25L 5962-9560007MMA
AS5C512K8EC-35 5962-9560002MNA AS5C512K8ECJ-35 5962-9560002MMA
AS5C512K8EC-35L 5962-9560006MNA AS5C512K8ECJ-35L 5962-9560006MMA
AS5C512K8EC-45 5962-9560001MNA AS5C512K8ECJ-45 5962-9560001MMA
AS5C512K8EC-45L 5962-9560005MNA AS5C512K8ECJ-45L 5962-9560005MMA
Micross Part # SMD Part #
AS5C512K8F-12L 5962-9560015QTA
AS5C512K8F-12L 5962-9560016QTA
AS5C512K8F-15 5962-9560014QTA
AS5C512K8F-15L 5962-9560013QTA
AS5C512K8F-20L 5962-9560012QTA
AS5C512K8F-25L 5962-9560011QTA
AS5C512K8F-35L 5962-9560010QTA
AS5C512K8F-45L 5962-9560009QTA
AS5C512K8F-20 5962-9560004MTA
AS5C512K8F-20L 5962-9560008MTA
AS5C512K8F-25 5962-9560003MTA
AS5C512K8F-25L 5962-9560007MTA
AS5C512K8F-35 5962-9560002MTA
AS5C512K8F-35L 5962-9560006MTA
AS5C512K8F-45 5962-9560001MTA
AS5C512K8F-45L 5962-9560005MTA
Micross Package Designator EC Micross Package Designator ECJ
Micross Package Designator F
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
17
MICROSS TO DSCC PART NUMBER CROSS REFERENCE
FOR SMD 5962-95613*
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Micross Part # SMD Part # Micross Part # SMD Part #
AS5C512K8EC-12/H 5962-9561329HNA AS5C512K8ECJ-12/H 5962-9561329HZA
AS5C512K8EC-12L/H 5962-9561328HNA AS5C512K8ECJ-12L/H 5962-9561328HZA
AS5C512K8EC-15/H 5962-9561314HNA AS5C512K8ECJ-15/H 5962-9561314HZA
AS5C512K8EC-17/H 5962-9561310HNA AS5C512K8ECJ-17/H 5962-9561310HZA
AS5C512K8EC-17L/H 5962-9561324HNA AS5C512K8ECJ-17L/H 5962-9561324HZA
AS5C512K8EC-20/H 5962-9561309HNA AS5C512K8ECJ-20/H 5962-9561309HZA
AS5C512K8EC-20L/H 5962-9561323HNA AS5C512K8ECJ-20L/H 5962-9561323HZA
AS5C512K8EC-25/H 5962-9561308HNA AS5C512K8ECJ-25/H 5962-9561308HZA
AS5C512K8EC-25/H 5962-9561313HNA AS5C512K8ECJ-25/H 5962-9561313HZA
AS5C512K8EC-25L/H 5962-9561322HNA AS5C512K8ECJ-25L/H 5962-9561322HZA
AS5C512K8EC-25L/H 5962-9561327HNA AS5C512K8ECJ-25L/H 5962-9561327HZA
AS5C512K8EC-35/H 5962-9561307HNA AS5C512K8ECJ-35/H 5962-9561307HZA
AS5C512K8EC-35/H 5962-9561312HNA AS5C512K8ECJ-35/H 5962-9561312HZA
AS5C512K8EC-35L/H 5962-9561321HNA AS5C512K8ECJ-35L/H 5962-9561321HZA
AS5C512K8EC-35L/H 5962-9561326HNA AS5C512K8ECJ-35L/H 5962-9561326HZA
AS5C512K8EC-45/H 5962-9561306HNA AS5C512K8ECJ-45/H 5962-9561306HZA
AS5C512K8EC-45/H 5962-9561311HNA AS5C512K8ECJ-45/H 5962-9561311HZA
AS5C512K8EC-45L/H 5962-9561320HNA AS5C512K8ECJ-45L/H 5962-9561320HZA
AS5C512K8EC-45L/H 5962-9561325HNA AS5C512K8ECJ-45L/H 5962-9561325HZA
AS5C512K8EC-55/H 5962-9561305HNA AS5C512K8ECJ-55/H 5962-9561305HZA
AS5C512K8EC-55L/H 5962-9561319HNA AS5C512K8ECJ-55L/H 5962-9561319HZA
AS5C512K8EC-12/H 5962-9561329HNC AS5C512K8ECJ-12/H 5962-9561329HZC
AS5C512K8EC-12L/H 5962-9561328HNC AS5C512K8ECJ-12L/H 5962-9561328HZC
AS5C512K8EC-15/H 5962-9561314HNC AS5C512K8ECJ-15/H 5962-9561314HZC
AS5C512K8EC-17/H 5962-9561310HNC AS5C512K8ECJ-17/H 5962-9561310HZC
AS5C512K8EC-17L/H 5962-9561324HNC AS5C512K8ECJ-17L/H 5962-9561324HZC
AS5C512K8EC-20/H 5962-9561309HNC AS5C512K8ECJ-20/H 5962-9561309HZC
AS5C512K8EC-20L/H 5962-9561323HNC AS5C512K8ECJ-20L/H 5962-9561323HZC
AS5C512K8EC-25/H 5962-9561308HNC AS5C512K8ECJ-25/H 5962-9561308HZC
AS5C512K8EC-25/H 5962-9561313HNC AS5C512K8ECJ-25/H 5962-9561313HZC
AS5C512K8EC-25L/H 5962-9561322HNC AS5C512K8ECJ-25L/H 5962-9561322HZC
AS5C512K8EC-25L/H 5962-9561327HNC AS5C512K8ECJ-25L/H 5962-9561327HZC
AS5C512K8EC-35/H 5962-9561307HNC AS5C512K8ECJ-35/H 5962-9561307HZC
AS5C512K8EC-35/H 5962-9561312HNC AS5C512K8ECJ-35/H 5962-9561312HZC
AS5C512K8EC-35L/H 5962-9561321HNC AS5C512K8ECJ-35L/H 5962-9561321HZC
AS5C512K8EC-35L/H 5962-9561326HNC AS5C512K8ECJ-35L/H 5962-9561326HZC
AS5C512K8EC-45/H 5962-9561306HNC AS5C512K8ECJ-45/H 5962-9561306HZC
AS5C512K8EC-45/H 5962-9561311HNC AS5C512K8ECJ-45/H 5962-9561311HZC
AS5C512K8EC-45L/H 5962-9561320HNC AS5C512K8ECJ-45L/H 5962-9561320HZC
AS5C512K8EC-45L/H 5962-9561325HNC AS5C512K8ECJ-45L/H 5962-9561325HZC
AS5C512K8EC-55/H 5962-9561305HNC AS5C512K8ECJ-55/H 5962-9561305HZC
AS5C512K8EC-55L/H 5962-9561319HNC AS5C512K8ECJ-55L/H 5962-9561319HZC
Micross Package Designator EC Micross Package Designator ECJ
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
18
MICROSS TO DSCC PART NUMBER CROSS REFERENCE
FOR SMD 5962-95613*
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Micross Part # SMD Part #
AS5C512K8F-12/H 5962-9561329HUA
AS5C512K8F-12L/H 5962-9561328HUA
AS5C512K8F-15/H 5962-9561314HUA
AS5C512K8F-17/H 5962-9561310HUA
AS5C512K8F-17L/H 5962-9561324HUA
AS5C512K8F-20/H 5962-9561309HUA
AS5C512K8F-20L/H 5962-9561323HUA
AS5C512K8F-25/H 5962-9561308HUA
AS5C512K8F-25/H 5962-9561313HUA
AS5C512K8F-25L/H 5962-9561322HUA
AS5C512K8F-25L/H 5962-9561327HUA
AS5C512K8F-35/H 5962-9561307HUA
AS5C512K8F-35/H 5962-9561312HUA
AS5C512K8F-35L/H 5962-9561321HUA
AS5C512K8F-35L/H 5962-9561326HUA
AS5C512K8F-45/H 5962-9561306HUA
AS5C512K8F-45/H 5962-9561311HUA
AS5C512K8F-55/H 5962-9561305HUA
AS5C512K8F-55L/H 5962-9561319HUA
AS5C512K8F-45L/H 5962-9561320HUA
AS5C512K8F-45L/H 5962-9561325HUA
AS5C512K8F-12/H 5962-9561329HUC
AS5C512K8F-12L/H 5962-9561328HUC
AS5C512K8F-15/H 5962-9561314HUC
AS5C512K8F-17/H 5962-9561310HUC
AS5C512K8F-17L/H 5962-9561324HUC
AS5C512K8F-20/H 5962-9561309HUC
AS5C512K8F-20L/H 5962-9561323HUC
AS5C512K8F-25/H 5962-9561308HUC
AS5C512K8F-25/H 5962-9561313HUC
AS5C512K8F-25L/H 5962-9561322HUC
AS5C512K8F-25L/H 5962-9561327HUC
AS5C512K8F-35/H 5962-9561307HUC
AS5C512K8F-35/H 5962-9561312HUC
AS5C512K8F-35L/H 5962-9561321HUC
AS5C512K8F-35L/H 5962-9561326HUC
AS5C512K8F-45/H 5962-9561306HUC
AS5C512K8F-45/H 5962-9561311HUC
AS5C512K8F-55/H 5962-9561305HUC
AS5C512K8F-55L/H 5962-9561319HUC
AS5C512K8F-45L/H 5962-9561320HUC
AS5C512K8F-45L/H 5962-9561325HUC
Micross Package Designator F
SRAM
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specications without notice.
19
DOCUMENT TITLE
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
REVISION HISTORY
Rev # History Release Date Status
7.1 Updated 36 lead SOJ Drawing September 2008 Release
7.2 Added Micross Information January 2010 Release
7.3 Expanded package offering to include March 2011 Release
Copper Lead Frames and RoHS
compliancy, pages 1&14,
changed elect. char. limits:
From: To:
ICCSP 225mA for all speeds 100mA for -12,-15 & -17
 90mA for -20 & -25
80mA for -35
70mA for -45
ICCLP 180mA for all speeds 75mA for -12,-15 & -17
65mA for -20 & -25
60mA for -35
50mA for -45
ISBTSP 60mA for all speeds 20mA for all speeds
ISBTLP 30mA for all speeds 10mA for all speeds
ISBCSP 25mA for all speeds 15mA for all speeds
ISBCLP 10mA for all speeds 5mA for all speeds
ILI ±10µA ±2µA
CI 12pF 8pF
CO 14pF 10pF
tAH 1ns for all speeds 0ns for all speeds
tHZWE 25ns -35 & 30ns -45 15ns -35 & 20ns -45
7.4 Updated Data Retention Electrical August 2012 Release
Characteristics (L Version Only)
ICCDR max. from 800 uA to 4.5 mA
7.5 Updated Data Retention Electrical January 2013 Release
Characteristics (L Version Only)
ICCDR max. from 4.5mA to 2mA