2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit VCEO Collector-Emitter 30 Vdc VCBO Collector-Base Voltage 55 Vdc VEBO Emitter-Base Voltage 3.5 Vdc IC Collector Current 400 mA 5.0 28.6 Watts mW/ C Thermal Data P D Total Device Dissipation Derate above 25C Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) 55 - - Vdc Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) 30 - - Vdc Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) 55 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc Collector Cutoff Current (VCE = 28 Vdc, IB = 0) - - 20 A Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) - - 100 A 5.0 10 25 - 200 200 - - - 1.0 Vdc (on) HFE VCE(sat) DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) DYNAMIC Symbol fT COB Test Conditions Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) Value 2N3866 2N3866A Min. Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF Rev B January 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A FUNCTIONAL Symbol GPE Pout Test Conditions Power Gain Value Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Output Power Collector Efficiency C 8-60 L1 Typ. Max. Unit 10 - - dB 1.0 - - Watts 45 - - % LS POUT (RL=50 OHMS) RFC 8-60 PIN (RS=50 OHMS) Min. RFC 3-35 0.9-7 12 RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS. L1: 2 TURNS No. 18 wire, 1/4" ID, 1/8" long Ls: 2 3/4 TURNS No. 18 wire, 1/4" ID, 3/16" long Capacitor values in pF unless otherwise indicated. Tuning capacitors are air variable . Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A NPN NPN NPN NPN NPN NPN NPN 175 0.15 18 60 12 20 175 1 10 50 12 20 175 1.5 11.5 60 12.5 16 175 1.5 11.5 50 12.5 16 175 1.75 11.5 50 12.5 16 175 3 7.8 50 12.5 18 200 20 6 12 MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN 512 512 400 400 470 470 0.5 0.5 1 1 1.5 1.5 10 13 10 10 11 11 65 7.5 16 150 60 12.5 16 150 45 28 30 400 45 28 30 400 50 12.5 16 400 50 12.5 16 400 MACRO X MRF559 NPN 870 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER MACRO MRF557T NPN 870 1.5 6.5 9.5 8 8 8 70 65 55 55 55 7.5 12.5 12.5 12.5 12.5 16 16 16 16 16 150 150 200 400 400 TO-39 SO-8 3 10 15 12 2N5109 NPN 200 MRF5943C NPN 200 3.4 30 15 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1200 1300 Ccb(pF) BVCE IC max (mA) Ftau (MHz) Gu Max (dB) Type TO-39 Freq (MHz) NF (dB) NF IC (mA) NF VCE GNF (dB) 400 400 500 500 330 1000 50 Device Packag BVCEO SO-8 MRF4427, R2 TO-39 2N4427 MRF553 POWER MACRO POWER MACRO MRF553T MRF607 TO-39 2N6255 TO-39 TO-72 2N5179 IC max GPE VCC Efficiency (%) GPE (dB) Pout GPE Freq (MHz) Type Device Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 3.5 11.4 1000 20 400 30 400 30 400 TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50 TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 MACRO T BFR91 NPN 500 1.9 2 5 MACRO T BFR96 NPN 500 2 10 10 SO-8 MRF5812, R1, R2 NPN 500 11 16.5 5000 1 12 35 14.5 500 2.6 15 100 2 50 10 15.5 17.8 5000 MACRO X MRF581A NPN 500 2 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18 5000 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MACRO X MRF581 NPN 500 2.5 50 10 TO-39 MRF586 NPN 500 MACRO X MRF951 NPN 1000 1.3 5 6 14 MACRO X MRF571 NPN 1000 1.5 10 6 10 MACRO T BFR91 NPN 1000 2.5 2 5 8 MACRO T BFR90 NPN 1000 2 10 10 TO-39 TO-39 MRF545 MRF544 PNP NPN 3 3 90 15 15 17.8 5000 11 14.5 4500 17 15 200 15 200 1 15 30 16 200 2.2 17 200 8000 0.45 10 100 8000 1 5000 1 12 35 12.5 5000 1 15 30 14 1400 13.5 1500 2 70 400 70 400 11 10 70 RF (LNA / General Purpose) Selection RF (Low Power PA / General Purpose) Selection Low Cost RF Plastic Package Options Macro T Macro X Power SO-8 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.