2N3906 MMBT3906 C E C B TO-92 SOT-23 E PZT3906 MMPQ3906 E B Mark: 2A B E SOIC-16 B E B E C B C C C C C C C C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 N Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA V ON CHARACTERISTICS hFE DC Current Gain * VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 100 60 30 0.65 300 0.25 0.4 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance NF Noise Figure (except MMPQ3906) SWITCHING CHARACTERISTICS IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 250 MHz 4.5 pF 10.0 pF 4.0 dB 35 ns (except MMPQ3906) td Delay Time VCC = 3.0 V, VBE = 0.5 V, tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns tf Fall Time IB1 = IB2 = 1.0 mA 75 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 PNP General Purpose Amplifier (continued) Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic Max Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RqJC RqJA Thermal Resistance, Junction to Ambient Symbol PD 2N3906 625 5.0 83.3 *PZT3906 1,000 8.0 200 125 Characteristic mW mW/C C/W C/W Max **MMBT3906 350 2.8 357 Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die RqJA Units Units MMPQ3906 1,000 8.0 mW mW/C C/W C/W C/W 125 240 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Collector-Emitter Saturation Voltage vs Collector Current Typical Pulsed Current Gain vs Collector Current 0.3 250 = 10 Vce = 1V 200 0.25 125 C 0.2 150 0.15 25 C 25 C 0.1 100 125 C - 40 C 0.05 - 40 C 50 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 CESAT h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0 1 10 100 I C - COLLECTOR CURRENT (mA) 200 Base-Emitter Saturation Voltage vs Collector Current = 10 1 - 40 C 25 C 0.8 125 C 0.6 0.4 0.2 0 1 10 I C - COLLECTOR CURRENT (mA) Pr66 100 200 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Pr66 Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 1V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) Pr66 25 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 100 V 10 = 25V C obo CB CAPACITANCE (pF) I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 10 1 0.1 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( C) 8 6 4 C ibo 2 0 0.1 125 1 REVERSE BIAS VOLTAGE (V) 10 Pr66 Noise Figure vs Source Resistance Noise Figure vs Frequency 6 12 V CE = 5.0V f = 1.0 kHz NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 I C = 100 A, R S = 200 3 2 I C = 1.0 mA, R S = 200 1 I C = 100 A, R S = 2.0 k 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 1.0 mA 8 6 I C = 100 A 4 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( k ) Pr66 Pr66 Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 tr I B1= I B2= 1 t off 100 TIME (nS) TIME (nS) 100 1 100 Ic t on I B1 = 10 10 Ic t off I = I = B1 B2 10 td 10 I C - COLLECTOR CURRENT (mA) Pr66 100 1 t on V BE(OFF)= 0.5V 1 Ic 10 10 I C - COLLECTOR CURRENT (mA) Pr66 100 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 PNP General Purpose Amplifier