2N3906 / MMBT3906 / MMPQ3906 / PZT3906
NDiscrete POWER & Signal
Technologies
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3906
PZT3906
MMPQ3906
MMBT3906
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
CBETO-92
BC
C
SOT-223
E
C
B
E
SOT-23
Mark: 2A
CCCCCCCC
SOIC-16
EBEBEBEB
2N3906 / MMBT3906 / MMPQ3906 / PZT3906
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (except MMPQ3906)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
30
300
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.25
0.4 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.5 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz 10.0 pF
NF Noise Figure (except MMPQ3906) IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz 4.0 dB
tdDelay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
trRise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
tsStorage Time VCC = 3.0 V, IC = 10mA 225 ns
tfFall Time IB1 = IB2 = 1.0 mA 75 ns
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
PNP General Purpose Amplifier
(continued)
2N3906 / MMBT3906 / MMPQ3906 / PZT3906
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N3906 *PZT3906
PDTotal Device Dissipation
Derate above 25°C625
5.0 1,000
8.0 mW
mW/°C
RqJC Thermal Resistance, Junction to Case 83.3 °C/W
RqJA Thermal Resistance, Junction to Ambient 200 125 °C/W
Symbol Characteristic Max Units
**MMBT3906 MMPQ3906
PDTotal Device Dissipation
Derate above 25°C350
2.8 1,000
8.0 mW
mW/°C
RqJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357 125
240
°C/W
°C/W
°C/W
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Base Emitter ON Voltage vs
Collector Current
Pr66
0.1 110 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 1V
CE
25 °C
- 40 ºC
125 ºC
Typical Pulsed Current Gain
vs Collector Current
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce = 1V
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter Saturation
Voltage vs Collector Current
Pr66
110 100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
ββ = 10
25 °C
- 40 ºC
125 ºC
Collector-Emitter Saturation
Voltage vs Collector Current
Pr66
110 100 200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
C
CESAT
25 °C
- 40 ºC
125 ºC
ββ = 10
2N3906 / MMBT3906 / MMPQ3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Collector-Cutoff Current
vs. Ambient Temperature
Pr66
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
º
V = 25V
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
0.1 110
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
Noise Figure vs Frequency
Pr66
0.1 110 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
I = 100 µµA, R = 200 ΩΩ
C
V = 5.0V
CE
S
I = 100 µµA, R = 2.0 k ΩΩ
CS
I = 1.0 mA, R = 200 ΩΩ
CS
kΩΩ
Noise Figure vs Source Resistance
Pr66
0.1 110 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µµA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collector Current
Pr66
110 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
tf
td
Turn On and Turn Off Times
vs Collector Current
Pr66
110 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
t
off
B1
C
B2 Ic
10
t
on
V = 0.5V
BE(OFF)
t I =
on
t
off
B1 Ic
10
2N3906 / MMBT3906 / MMPQ3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
025 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
SOT-23
TO-92
