HL8325G ODE2051-00 (M) Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. Features Package Type * HL8325G: G2 * Infrared light output: p = 820 to 840 nm * High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW * Built-in monitor photodiode * Single longitudinal mode Internal Circuit 1 3 PD LD 2 Absolute Maximum Ratings (TC = 25C) Item Optical output power Pulse optical output power Laser diode reverse voltage Photo diode reverse voltage Operating temperature Storage temperature Symbol Ratings 40 50 * 2 30 -10 to +60 -40 to +85 PO PO(pulse) VR(LD) VR(PD) Topr Tstg Unit mW mW V V C C Note: Pulse condition : Pulse width = 1 s, duty = 50% Optical and Electrical Characteristics (TC = 25C) Item Threshold current Slope efficiency Symbol Ith s Min -- 0.4 Typ 40 0.5 Max 70 0.9 Unit mA mW/mA // 7 10 14 Test Conditions -- 24 (mW) / (I(32mW) - I(8mW)) PO = 40 mW, FWHM Beam divergence parallel to the junction Beam divergence perpendicular to the junction Astigmatism Lasing wavelength 18 22 32 PO = 40 mW, FWHM AS p -- 820 5 830 -- 840 m nm PO = 4 mW, NA = 0.4 PO = 40 mW Monitor current IS 20 40 130 A PO = 4 mW, VR(PD) = 5 V Rev.0 Aug. 01, 2008 page 1 of 4 HL8325G Typical Characteristic Curves Threshold Current vs. Case Temperature TC = 0C 25C 40 60C 30 20 10 0 0 40 80 120 160 100 Threshould current, Ith (mA) Optical output power, PO (mW) Optical Output Power vs. Foward Current 50 50 30 20 10 200 0 10 30 40 50 60 Case temperature, TC (C) Foward current, IF (mA) Monitor Current vs. Case Temprature Slope Efficiency vs. Case Temperature 100 1.0 PO = 4 mW VR(PD) = 5 V Monitor current, IS (A) Slope efficiency, s (mW/mA) 20 0.8 0.6 0.4 0.2 80 60 40 20 0 0 0 10 20 30 40 50 60 0 10 20 30 40 50 60 Case temperature, TC (C) Case temperature, TC (C) Lasing Wavelength vs. Case Temperature PO = 40 mW Far Field Pattern 840 Relative intensity Lasing wavelength, p (nm) 845 835 830 PO = 40 mW TC = 25C Perpendicular 825 Parallel -40 -30 -20 -10 820 0 10 20 40 50 30 Case temperature, TC (C) Rev.0 Aug. 01, 2008 page 2 of 4 0 10 Angle, ( ) 60 20 30 40 HL8325G Package Dimensions As of July, 2002 0.4 +0.1 -0 Unit: mm 9.0 +0 -0.025 1.0 0.1 Glass 7.2 +0.3 -0.2 6.2 0.2 (2.0) 3.5 0.2 91 2.45 Emitting Point 3 - 0.45 0.1 1 2 1.5 0.1 0.3 (90) (0.65) 3 3 1 2 2.54 0.35 OPJ Code JEDEC JEITA Mass (reference value) Rev.0 Aug. 01, 2008 page 3 of 4 LD/G2 -- -- 1.1 g HL8325G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032, Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2008 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 5.0 Rev.0 Aug. 01, 2008 page 4 of 4