MMBT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
■SILICO N EP ITA X IAL PLANA R PNP
TRANSISTOR
■MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■TAPE AND REEL PA CKING
■THE NP N COM PLE M ENT A RY TYP E IS
MMBT3904
APPLICATIONS
■WELL SU ITAB LE FOR PO RTAB L E
EQUIPMENT
■SMALL LOAD S WITCH TRANSISTOR WI TH
HIGH GAIN AND LOW SATURATION
VOLTAGE
®
INT E R NAL SCH E M ATI C DIAG RA M
June 2002
SOT-23
Type Marking
MMBT3906 36
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -60 V
VCEO Collector-Emitter Voltage (IB = 0) -40 V
VEBO Emitter-Base Voltage (IC = 0) -6 V
ICCollector Current -200 m A
Ptot Total Dissipation at TC = 25 oC 350 mW
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 357.1 oC/W
• Devic e mounted on a PCB area of 1 cm2
ELE CT RICAL CHAR ACT ERIST ICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = 3 V) VCE = -30 V -50 nA
IBEX Collector Cut-off
Current (VBE = 3 V) VCE = -30 V -50 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -1 mA -40 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA-60 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA -6 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA -0.25
-0.4 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA -0.65 -0.85
-0.95 V
V
hFE∗DC Current Ga in IC = -0.1 mA VCE = -1 V
IC = -1 mA VCE = -1 V
IC = -10 mA VCE = -1 V
IC = -50 mA VCE = -1 V
IC = -100 mA VCE = -1 V
60
80
100
60
30
300
fTTransition Frequency IC = -10mA VCE = -20 V f = 100MHz 250 MHz
NF Noise Figure VCE = -5 V IC = -0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 KΩ4dB
C
CBO Collector-Base
Capacitance IE = 0 VCB = -5 V f = 1 00 KH z 6 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
tdDelay Time IC = -10 mA IB = -1 mA
VCC = -3V 35 ns
trRise Time 35 ns
tsStorage Time IC = -10 mA IB1 = -IB2 = -1 mA
VCC = -3V 225 ns
tfFall Time 72 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
MMBT3906
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DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G2.1 2.582.6 98.4
H 0.38 0.48 14.9 18.8
L0.3 0.611.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
MMBT3906
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third part ies which may re sult from its use . No li cen s e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplie d. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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MMBT3906
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