4-1
FRK460D, FRK460R,
FRK460H
17A, 500V, 0.400 Ohm, Rad Hard,
N-Channel Power MOSFETs
File Number 3238.1
Package
TO-204AE
Symbol
Features
• 17A, 500V, RDS(on) = 0.400Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 45.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm2 f or 500V product to 1E14n/cm 2 for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-
rent limiting.
This MOSFET is an enhancement-mode silicon-gate power field eff ect transistor of
the vertical DMOS (VDMOS) str ucture. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose r ate (GAMMA DOT) exposure .
This part ma y be supplied as a die or in various packages other than sho wn above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
de viations from the data sheet.
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
FRK460D, R, H UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 17
11 A
A
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 51 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300
120
2.40
W
W
W/oC
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 51 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 17 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 51 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150 oC
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
4-2
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 500 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage
Drain Current IDSS1
IDSS2
IDSS3
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25 mA
Rated Avalanche Current IAR Time = 20µs - 51 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 17A - 7.14 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 11A - 0.400 Ω
Turn-On Delay Time td(on) VDD = 250V, ID = 17A - 150
ns
Rise Time tr Pulse Width = 3µs - 800
Turn-Off Delay Time td(off) Period = 300µs, Rg = 10Ω- 700
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 500
Gate-Charge Threshold QG(th)
VDD = 250V, ID = 17A
IGS1 = IGS2
0≤ VGS ≤ 20
626
ncGate-Charge On State QG(on) 97 390
Gate-Charge Total QGM 189 758
Plateau Voltage VGP 3 14 V
Gate-Charge Source QGS 23 92 nc
Gate-Charge Drain QGD 47 188
Diode Forward Voltage VSD ID = 17A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 17A; di/dt = 100A/µs - 3000 ns
Junction-To-Case Rθjc - 0.42 oC/W
Junction-To-Ambient Rθja Free Air Operation - 30
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
VDS
DUT
RGS
0V
VGS = 12V
VDD
RL
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50Ω
50Ω
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER
FRK460D, FRK460R, FRK460H
4-3
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TYPE TEST CONDITIONS
LIMITS
UNITSMIN MAX
Drain-Source
Breakdown Volts (Note 4, 6) BVDSS FRK460D, R VGS = 0, ID = 1mA 500 - V
(Note 5, 6) BVDSS FRK460H VGS = 0, ID = 1mA 475 - V
Gate-Source
Threshold Volts (Note 4, 6) VGS(th) FRK460D, R VGS = VDS, ID = 1mA 2.0 4.0 V
(Note 3, 5, 6) VGS(th) FRK460H VGS = VDS, ID = 1mA 1.5 4.5 V
Gate-Body
Leakage Forward (Note 4, 6) IGSSF FRK460D, R VGS = 20V, VDS = 0 - 100 nA
(Note 5, 6) IGSSF FRK460H VGS = 20V, VDS = 0 - 200 nA
Gate-Body
Leakage Reverse (Note 2, 4, 6) IGSSR FRK460D, R VGS = -20V, VDS = 0 - 100 nA
(Note 2, 5, 6) IGSSR FRK460H VGS = -20V, VDS = 0 - 200 nA
Zero-Gate Voltage
Drain Current (Note 4, 6) IDSS FRK460D, R VGS = 0, VDS = 400V - 25 µA
(Note 5, 6) IDSS FRK460H VGS = 0, VDS = 400V - 100 µA
Drain-Source
On-State Volts (Note 1, 4, 6) VDS(on) FRK460D, R VGS = 10V, ID = 17A - 7.14 V
(Note 1, 5, 6) VDS(on) FRK460H VGS = 16V, ID = 17A - 10.71 V
Drain-Source
On Resistance (Note 1, 4, 6) RDS(on) FRK460D, R VGS = 10V, ID = 11A - 0.400 Ω
(Note 1, 5, 6) RDS(on) FRK460H VGS = 14V, ID = 11A - 0.600 Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12
5. Gamma = 1000KRAD(Si). Neutron = 3E12
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/14/90 on TA 17665 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRK460D, FRK460R, FRK460H
4-4
Typical Performance Characteristics
FRK460D, FRK460R, FRK460H
4-5
FRK460D, FRK460R, FRK460H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet
F. Group C - Attributes Data Sheet
G. Group D - Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A - Attributes Data Sheet
- Group A Lot Traveler
E. Group B - Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subg roup B6)
F. Group C - Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D - Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Re verse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Re v erse
Bias Delta Data
F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet
I. Group D - Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
4-6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information fur nished by Intersil is believed to be accurate
and reliable . However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FRK460D, FRK460R, FRK460H
TO-204AE
JEDEC TO-204AE HERMETIC STEEL PACKAGE
ØD Øb
A
SEATING
PLANE ØP
Øb1
s
q
R1
R
ee1
L
12
A1
TERM. 3 SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.310 0.330 7.88 8.38 -
A10.060 0.065 1.53 1.65 -
Øb 0.057 0.063 1.45 1.60 2, 3
Øb10.138 0.145 3.51 3.68 -
ØD - 0.800 - 20.32 -
e 0.215 TYP 5.46 TYP 4
e1 0.430 BSC 10.92 BSC 4
L 0.440 0.480 11.18 12.19 -
ØP 0.155 0.160 3.94 4.06 -
q 1.187 BSC 30.15 BSC -
R 0.495 0.525 12.58 13.33 -
R10.131 0.185 3.33 4.69 -
s 0.655 0.675 16.64 17.14 -
NOTES:
1. These dimensions are within allowab le dimensions of Re v. B of
JEDEC TO-204AE outline dated 11-82.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of seating plane.
5. Controlling dimension: Inch.
6. Revision 2 dated 6-93.
