KE C SEMICONDUCTOR KTB631K KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES * High breakdown voltage Vcuo 120V, high current 1A. * Low saturation voltage and good linearity of her. MAXIMUM RATINGS (Ta=25T) ~ sa CHARACTERISTIC SYMBOL] RATING | UNIT : 3.140.1 Collector-Base Voltage Veco -120 Vv 3 35 F 11.040.3 Collector-Emitter Voltage Vero -120 Vv G 2.9 MAX H 1.0 MAX Emitter-Base Voltage Vezo -5 Vv 7 owerO 1S I 1 L 14.0 MIN c - ! BLO. Collector Current A | oreo 1s Icp -2 1. EMITTER 16 2. COLLECTOR P 3.4 MAX Or % 3. BASE Collector Power Ta=2oC Pe lo w : Dissipation Tc=25C 8 Junction Temperature Tj 150 Cc TO 126 Storage Temperature Range Tog -55 ~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut of Current Icno Vep=-50V, In=0 _ _ -] uA Emitter Cut of Current Igo Vipr-4V, Ic=0 - - -| TN Collector-Base Breakdown Voltage Visrcso Tc=-10pA -120 - - Vv Collector-Emitter Breakdown Voltage Visrceo Tc=-ImA -120 - - Vv Emitter-Base Breakdown Voltage Verwrno | In=-1l0uA -5 - - Vv hra(l)Note | Ver=-5V, Ic=-50mA 100 - 320 DC Current Gain hrr(2) Vecr= -5V, Ic =-500mA 20 _ _ Gain Bandwidth Product fr Ver=-1l0V, Ic=-50mA - 110 - MHz Output Capacitance Cob Vep=-10V, f=1MHz - 30 - pF Collector-Emitter Saturation Voltage Vcxisat) Tc=-500mA, Ip=-50mA - -0.15 -0.4 Vv Base-Emitter Saturation Voltage VBR(sat) Te=-500mA, Ip=-50mA - -0.85 -1.2 Vv Ipe - I Turn-on Time ton in ~ - 80 - LI _| Le 240 20usec 1000 Switching Time Turn-off Time tore - 100 - ns 1uF 1uF Storage Time tsig Vop=-12V 7 rev - 600 - I=101g1=10Igg=500mA (Note) : hre(1) Classification Y:100~ 200, GR:160~320 1998. 10. 31 Revision No : 1 KEC 1/2 KTB631K 1998. 10. 31 Revision No : 1 KEC 2/2