September 2010 Doc ID 17413 Rev 2 1/17
17
STD8NM50N, STF8NM50N
STP8NM50N, STU8NM50N
N-channel 500 V, 0.73 Ω, 5 A MDmesh™II Power MOSFET
in DPAK, IPAK, TO-220 and TO-220FP
Features
■100% avalanche tested
■Low input capacitances and gate charge
■Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram
Order codes VDSS
@TJMAX
RDS(on)
max. ID
STD8NM50N
STF8NM50N
STP8NM50N
STU8NM50N
550 V < 0.79 Ω5 A
DPAK
1
3
123
TO-220
12
3
TO-220FP
3
2
1
IPAK
!-V
$
'
3
Table 1. Device summary
Order codes Marking Packages Packaging
STD8NM50N
8NM50N
DPAK Tape and reel
STF8NM50N TO-220FP
Tu b eSTP8NM50N TO-220
STU8NM50N IPAK
www.st.com
Contents STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
2/17 Doc ID 17413 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Electrical ratings
Doc ID 17413 Rev 2 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK, IPAK,
TO-220 TO-220FP
VGS Gate-source voltage ± 25 V
IDDrain current (continuous) at TC = 25 °C 5 5 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC = 100 °C 3 3 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 20 20 (1) A
PTOT Total dissipation at TC = 25 °C 45 20 W
dv/dt (3)
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500 V
Tstg Storage temperature - 55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK IPAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 2.78 6.25 °C/W
Rthj-amb
Thermal resistance junction-ambient
max 100 62.5 °C/W
Rthj-pcb Thermal resistance junction-pcb max 50 °C/W
Tl
Maximum lead temperature for
soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 2A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V) 140 mJ
Electrical characteristics STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
4/17 Doc ID 17413 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 500 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V 100 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 2.5 A 0.73 0.79 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0 -
364
33
1.2
-
pF
pF
pF
Coss(eq)(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance time
related
VDS = 0 to 50 V, VGS = 0 - 147.5 - pF
RG
Intrinsic gate
resistance f = 1 MHz open drain - 5.4 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 5 A,
VGS = 10 V
(see Figure 18)
-
14
3
7
-
nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 250 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
-
7
4.4
25
8.8
-
ns
ns
ns
ns
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Electrical characteristics
Doc ID 17413 Rev 2 5/17
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed) -5
20
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 5 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)-
187
1.3
14
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
224
1.5
13
ns
nC
A
Electrical characteristics STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
6/17 Doc ID 17413 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
Figure 3. Thermal impedance for DPAK and
IPAK
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedancefor TO-220
Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
AM07915v1
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
AM07916v1
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
AM07917v1
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Electrical characteristics
Doc ID 17413 Rev 2 7/17
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage
Figure 12. Capacitance variations Figure 13. Coss stored energy vs VDS
5V
6V
7V
VGS=10V
ID
6
4
2
0010 VDS(V)
20
(A)
30
8
10
AM07917v1 ID
6
4
2
004VGS(V)
8
(A)
26
8
10
VDS= 20 V
AM07918v1
RDS(on)
0.72
0.71
0.7
0.6902ID(A)
(Ω)
13
0.73
0.74
0.75
VGS=10V
45
0.76
0.77
AM07919v1 VGS
6
4
2
005Qg(nC)
(V)
8
10 15
10
VDD=400 V
ID=5 A
12
150
100
50
0
200
250
VDS
VGS
300
350
400
AM03195v1
C
1000
100
10
1
010 VDS(V)
(pF)
1100
Ciss
Coss
Crss
AM07921v1 E
2
1
00200 VDS(V)
(µJ)
100 300 400 500
AM07922v1
Electrical characteristics STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
8/17 Doc ID 17413 Rev 2
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Normalized BVdss vs temperature
VGS(th)
1.00
0.90
0.80
0.70
-50 0TJ(°C)
(norm)
-25 75
25 50 100
ID = 250 µA
AM07923v1
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
2.1
I
D
= 250 µA
AM07924v1
BV
DSS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.93
0.95
0.97
1.01
1.03
1.05
0.99
I
D = 1 mA
AM07925v1
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Test circuits
Doc ID 17413 Rev 2 9/17
3 Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
10/17 Doc ID 17413 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Package mechanical data
Doc ID 17413 Rev 2 11/17
Figure 23. TO-220FP drawing
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
Package mechanical data STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
12/17 Doc ID 17413 Rev 2
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.030.23
b0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Package mechanical data
Doc ID 17413 Rev 2 13/17
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b0.64 0.90
b20.95
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L9.00 9.40
(L1) 0.801.20
L2 0.80
V1 10 o
TO-251 (IPAK) mechanical data
0068771_H
Package mechanical data STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
14/17 Doc ID 17413 Rev 2
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
∅P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N Packaging mechanical data
Doc ID 17413 Rev 2 15/17
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Revision history STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
16/17 Doc ID 17413 Rev 2
6 Revision history
Table 10. Document revision history
Date Revision Changes
20-Apr-2010 1 First release.
03-Sep-2010 2
Document status promoted from preliminary data to datasheet.
Inserted Section 2.1: Electrical characteristics (curves).
Corrected RDS(on) max value in: Features.
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
Doc ID 17413 Rev 2 17/17
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