PIN Diodes MA4GP Series Features May be Driven Directly from TTL Signals Low Series Resistance Fast Switching Speed No Reverse Bias Required Available as Passivated Chips Description Gallium Arsenide PIN diodes offer improved performance characteristics in many microwave semiconductor applica- tions. These benefits result from the inherent semicon- ductor material properties of GaAs including high carrier mobility resulting in low resistance and fast switching speed. Low [region carrier concentration results in near zero bias punch through. Gallium Arsenides higher band gap also assures higher temperature capability. Switching speeds in the low nanosecond range using inexpensive TIL buffer logic are achievable with GaAs PIN diodes. This performance is achieved because GaAs PIN diodes can exhibit high impedance at positive bias (up to 0.5 volts). Reverse bias is not required for many GaAs PIN diode applications. Low loss in switch and phase shifter circuits (up to 40 GHz) is achievable as a result of low parasitic series resistance in the conducting and non-conducting state. V 2.00 Case Style 277 \ Specifications Ta= +25C Electrical Specifications Capacitance Minimum Maximum2 1 MHz Reverse Nominal Nominal Forward Rs @ - 10 voits Voltage Switching? Carrier* Model! @ 20 mA, 1 GHz Maximum Vp @ 10 pA Speed Lifetime Number (Ohms) (pF) (Volts) (ns) (ns) MA4GP022 1.0 0.15 50 4.0 5.0 MA4GP025 0.85 0.35 75 4.0 10.0 MA4GP030 2.0 0.06 100 10.0 20.0 MA4GP032 1.5 0.12 100 10.0 25.0 Notes: 1. The passivated chip (case style 277) is the standard case style for the MA4GP series. Minimum bonding pad diameter is 2 mils. The other available case styles are 30, 31, 94 and 120. To specify the case style desired, add the case style number as a suffix to the model number when ordering. See Appendix for full dimensions. Specifications Subject to Change Without Notice. 3-40 2. Forward Rg is measured by terminating a transmission line with the diode in the case style 30 package. 3. Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted 7.0 GHz switch. 4. Carrier lifetime is measured at 10 mA derived from stored charge measurements. M/A-CONM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 a Europe: Tel. +44 (1344) 869 595 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 GaAs PIN Diodes MA4GP Series V 2.00 Maximum Ratings Environmental Rating PER MIL-STD-750 Meth Parameter Absolute Maximum ethod Level Temperature, Cycling 1051 5 cycles, - 65 C to +150 C Temperature Operating 65 C to +175C Shock 2016 500 g's Storage -65 C to +175C Vibration 2056 15 q's Voltage Breakdown Voltage Constant Acceleration 2006 20,000 gs Power Dissipation 250 mW @ +25C Moisture Resistance 1021 10 days (Packaged diodes) Typical Performance Curves TYPICAL FORWARD RESISTANCE vs FORWARD CURRENT TYPICAL FORWARD RESISTANCE vs FORWARD CURRENT AT 1 GHz AT 1 GHz 100 @ E & a a 0 s 6 n al < a. > = 1.0 10 100 FORWARD CURRENT (mA) . 1 1 10 100 FORWARD CURRENT (mA) Typical Performance Curves CAPACITANCE VOLTAGE CHARACTERISTICS CAPACITANCE VOLTAGE CHARACTERISTICS AT 1 GHz AT 1 GHz & . o o 0.1 1. 00=-1 3 -4 +5 6 -? ~9 10 APPLIED VOLTAGE (VOLTS) 410 #0 -1 <2 +3 -9 ~10 4 = APPLIED VOLTAGE (VOLTS) Specifications Subject to Change Without Notice Contiunued next page M/A-COM, Inc. 3-41 North America: Tel. (800) 366-2266 m= Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 GaAs PIN Diodes MA4GP Series V 2.00 TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE @ +25C (MA4GP SERIES) 100 mA 10 mA 100 pA FORWARD CURRENT 10 pA 1pA 0 O02 04 06 08 1.0 FORWARD VOLTAGE (VOLTS) Die Bonding GaAs is softer and more brittle than Silicon. The use of gold tin solder preform (80% Au 20% Sn) with an eutectic melting point of 280 C is recommended. A clean gold plated surface is required to insure good wetting. The pre- form should be large enough to insure that the die fits within the areas as shown. fo PREFORM HOT GAS BONDING WITH SOLDER PREFORM CHIP *Recommended thickness of preform is 1 mil (.025 mm) Specifications Subject to Change Without Notice. 3-42 The heating stage should be set at 240 C. An 80% Ng, 20% Hz forming gas is effective as the hot gas jet. The temperature at the tip should be approximately 400 C. Ribbon and Wire Attachment It is recommended that thermo-compression bonding be used. The bonding tip should be smaller than the anode contact. The exact conditions will depend on the tool types used. It is recommended that a half hard gold wire or strap be used. The wire or strap diameter should be smaller than the diameter of the anode contact. Typical bonding force should be between 20 and 25 grams and should not exceed 30 grams. When wire bonding a ther- mal compression wedge bonding is recommended using a heated stage and heated tip. The stage temperature should be approximately 240 C and the recommended temperature for the tip is 120 C. Ultrasonic scrubbing is not recommended. M/A-COM, inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020