BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features * AEC-Q101 Qualified and PPAP Capable * NSV Prefix for Automotive and Other Applications Requiring * HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements Pb-Free Packages are Available MAXIMUM RATINGS Symbol VR VRRM IF IFM(surge) Value Unit Continuous Reverse Voltage Rating 250 Vdc Repetitive Peak Reverse Voltage 250 Vdc Peak Forward Current 200 mAdc Peak Forward Surge Current 625 mAdc Symbol Characteristic Max Unit PD Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C 200 mW 1.57 mW/C 635 C/W -55 to +150 C TJ, Tstg Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 2 ANODE MARKING DIAGRAM 2 SOD-323 CASE 477 STYLE 1 1 THERMAL CHARACTERISTICS RqJA 1 CATHODE JS M G JS M G G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 Minimum Pad *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAS21HT1 SOD-323 3000 / Tape & Reel BAS21HT1G SOD-323 (Pb-Free) 3000 / Tape & Reel NSVBAS21HT1G SOD-323 (Pb-Free) 3000 / Tape & Reel NSVBAS21HT3G SOD-323 (Pb-Free) 10000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 6 1 Publication Order Number: BAS21HT1/D BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max - - 0.1 100 250 - - - 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr - 50 ns 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G TA = -55C 1000 800 REVERSE CURRENT (nA) 25C 155C 600 400 200 1 1 10 100 7000 6000 5000 4000 3000 TA = 155C 6 5 4 3 2 1 0 1000 TA = 25C TA = -55C 1 5 2 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 1.0 Cd, DIODE CAPACITANCE (pF) FORWARD VOLTAGE (mV) 1200 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance http://onsemi.com 3 7 8 100 200 300 BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G PACKAGE DIMENSIONS SOD-323 PLASTIC PACKAGE CASE 477-02 ISSUE G HE D b 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS21HT1/D