SMT Multi TOPLED Lead (Pb) Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features * SMT-Gehause mit rotem Sender (635 nm) und Si-Fototransistor * Geeignet fur SMT-Bestuckung * Gegurtet lieferbar * Sender und Empfanger getrennt ansteuerbar * SMT package with red emitter (635 nm) and Si-phototransistor * Suitable for SMT assembly * Available on tape and reel * Emitter und detector can be controlled separately Anwendungen Applications * Datenubertragung * Wegfahrsperre * Infrarotschnittstelle * Data transmission * Lock bar * Infrared interface Typ Type Bestellnummer Ordering Code SFH 331-JK Q65110A2821 2009-03-05 1 SFH 331 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value LED Einheit Unit Transistor Betriebs- und Lagertemperatur Operating and storage temperature range Top - 40 ... + 100 - 40 ... + 100 C Sperrschichttemperatur Junction temperature Tj + 100 + 100 C Durchlastrom (LED) Forward current (LED) IF 30 - mA Kollektorstrom (Transistor) Collector current (Transistor) IC - 15 mA Stostrom Surge current t 10 s, D = 0.005 IFM 500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 - V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE - 35 V Verlustleistung Total power dissipation Ptot 100 165 mW Rth JA 450 450 K/W Rth JS 350 - K/W Warmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board1) (Padgroe 16 mm2) mounting on pcb1) (pad size 16 mm2) Sperrschicht / Lotstelle junction / soldering joint 1) PC-board: G30/FR4 Hinweis / Notes Die angegebenen Grenzdaten gelten fur den Chip, fur den sie angegeben sind, unabhangig vom Betriebszustand des anderen. The stated maximum ratings refer to the specified chip regardless of the operating status of the other one. 2009-03-05 2 SFH 331 Kennwerte LED (TA = 25 C) Characteristics LED Bezeichnung Parameter Symbol Symbol Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA peak 635 nm Dominantwellenlange Dominant wavelength IF = 10 mA dom 628 nm Spektrale Bandbreite bei 50% von Irel max Spectral bandwidth at 50% of Irel max IF = 10 mA 45 nm Abstrahlwinkel bei 50% von IV(Vollwinkel) Viewing angle at 50% of IV 2 120 Grad deg. VF VF 2.0 < 2.6 V V Sperrstrom Reverse current VR = 5 V IR IR 0.01 < 10 A A Kapazitat Capacitance VR = 0V, f = 1 MHz CO 12 pF tr tf 300 150 ns ns IV 6 (4.0 ... 12.5) mcd Durchlaspannung Forward voltage IF = 10 mA Schaltzeiten: Switching times: IV from 10% to 90% IV from 90% to 10% IF = 100 mA, tp = 10 s, RL = 50 Lichtstarke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA 2009-03-05 3 Wert Value Einheit Unit SFH 331 Kennwerte Fototransistor (TA = 25 C, = 950 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 990 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 440 ... 1150 nm Bestrahlungsempfindliche Flache ( 240 m) Radiant sensitive area ( 240 m) A 0.038 mm2 Abmessung der Chipflache Dimensions of chip area LxB 0.45 x 0.45 mm x mm Halbwinkel Half angle 60 Grad deg. Kapazitat Capacitance VCE = 0V, f = 1MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 20V, E = 0 ICEO 1 ( 50) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5V IPCE 16 A Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5V, RL = 1k tr, tf 7 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 5 A, Ee = 0.1mW/cm2 VCEsat 150 mV 2009-03-05 4 Wert Value Einheit Unit SFH 331 LEDRadiation Characteristics Irel = f () Phototransistor Directional Characteristics Srel = f () 40 30 20 10 0 50 OHL01660 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 0.8 0.6 0 0.4 20 40 60 80 100 120 LED Relative Spectral Emission Irel = f (), TA = 25C, IF = 20 mA V() = Standard Eye Response Curve OHL02350 100 % rel 80 V 60 40 20 super-red 0 400 450 500 550 600 650 2009-03-05 5 nm 700 SFH 331 Forward Current IF = f (VF), TA = 25 C Rel Luminous Intensity IV / IV (10 mA) = f (IF), TA = 25 C OHL02351 10 2 F mA Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 25 C OHL01686 10 3 OHL02316 10 1 IF V V(10mA) IF T T D = 0.005 10 0 10 1 tP D= mA tP 0.01 0.02 0.05 0.1 5 5 super-red 10 -1 super-red 10 2 0.2 5 5 10 0 10 -2 5 0.5 DC 5 10 -1 1.0 1.4 1.8 2.2 2.6 Max. Permissible Forward Current IF = f (TA) F 10 -3 10 3.0 V 3.4 VF 0 5 10 5 10 1 mA 10 F 2 Wavelength at Peak Emission peak= f(TA), IF = 20 mA OHL01661 60 mA -1 OHL02104 690 10 -2 10 -1 10 0 s 10 1 tp Dominant Wavelength dom = f (TA), IF = 20 mA OHL02105 nm 650 650 super-red 630 super-red 630 30 orange 610 610 20 590 yellow 590 10 570 green 570 0 550 pure-green 0 20 40 60 80 C 100 TA 20 40 550 60 80 C 100 TA OHL02150 2.0 OHL02106 2.4 0 Rel Luminous Intensity IV / IV (25C) = f (TA), IF = 10 mA Forward Current VF = f (TA), IF = 10mA IV V I V (25 C) 2.2 1.6 1.2 2.0 yellow green green super-red orange yellow 1.8 0.8 orange super-red pure-green pure-green 0.4 1.6 1.4 10 -3 dom nm 40 VF 10 -4 690 peak 50 10 1 -5 10 0.0 0 20 40 60 80 C 100 0 20 40 80 C 100 Tj TA 2009-03-05 60 6 orange yellow green pure-green 0 20 40 60 80 C 100 TA SFH 331 Phototransistor Rel. Spectral Sensitivity Srel = f () Srel OHF00207 100 % Photocurrent IPCE = f (VCE), Ee = Parameter Dark Current ICEO = f (VCE), E = 0 OHF01529 10 0 mA PCE 80 70 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 60 CEO 10 0 10 -1 10 -1 50 OHF01527 10 1 nA mW 0.1 2 cm 40 30 10 -2 20 10 0 400 500 600 700 800 900 10 -2 nm 1100 0 5 10 15 20 25 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 Total Power Dissipation Ptot = f (TA) OHF00871 200 C CE pF 160 4.0 10 -3 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25 = f (TA), VCE = 5 V OHF01528 5.0 mW P tot 30 V 35 V CE PCE OHF01524 1.6 PCE 25 1.4 1.2 3.5 1.0 3.0 120 2.5 0.8 2.0 80 0.6 1.5 0.4 1.0 40 0.2 0.5 0 0 20 40 60 Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA 0 10 -2 80 C 100 TA 10 1 V 10 2 V CE Photocurrent IPCE = f (Ee), VCE = 5 V OHF01924 10 3 A 10 2 10 2 10 1 10 1 4 3 2 10 0 10 0 2009-03-05 10 0 PCE CEO 10 -1 -25 10 -1 0 25 50 75 C 100 TA 10 -1 -3 10 10 -2 10 0 mW/cm 2 Ee 7 0 -25 0 25 50 75 C 100 TA SFH 331 Mazeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 3 C C E 1 0.1 (0.004) typ 4 Package marking Emission color : super-red (SFH 331) 0.5 (0.020) A 3.7 (0.146) 3.3 (0.130) 0.9 (0.035) 0.7 (0.028) 1.1 (0.043) 3.4 (0.134) 3.0 (0.118) 2 1.7 (0.067) (2.4 (0.094)) 0.8 (0.031) 0.6 (0.024) 2.1 (0.083) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6924 Empfohlenes Lotpaddesign Recommended Solder Pad Design 3.3 (0.130) 3.3 (0.130) 0.4 (0.016) 2.6 (0.102) Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Kathoden Markierung / Cathode marking 7.5 (0.295) 0.5 (0.020) 1.5 (0.059) 4.5 (0.177) 1.1 (0.043) Cu Flache / <_ 12 mm 2 per pad Cu-area Lotstoplack Solder resist OHLPY439 Mae in mm (inch) / Dimensions in mm (inch). 2009-03-05 8 SFH 331 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-03-05 9