SFH 331
SMT Multi TOPLED
Lead (Pb) Free Product - RoHS Compliant
2009-03-05 1
Wesentliche Merkmale
• SMT-Gehäuse mit rotem Sender (635 n m) und
Si-Fototransistor
• Geeignet für SMT-Bestückung
• Gegurtet lieferbar
• Sender und Empfänger getrennt ansteuerbar
Anwendungen
• Datenübertragung
• Wegfahrsperre
• Infrarotschnittstelle
Typ
Type Bestellnummer
Ordering Code
SFH 331-JK Q65110A2821
Features
• SMT package with red emitter (635 nm) and
Si-phototransistor
• Suitable for SMT assembly
• Available on tape and reel
• Emitter und detector can be controlled
separately
Applications
• Data transmission
• Lock bar
• Infrared interface
2009-03-05 2
SFH 331
Hinweis / Notes
Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom
Betriebszustand des anderen.
The stated maximum ratings refer to the specified chip regardless of the operating status of the other
one.
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
LED Transistor
Betriebs- und Lagertemperatur
Operating and storage temperature range Top – 40 ... + 100 – 40 ... + 100 °C
Sperrschichttemperatur
Junction temperature Tj+ 100 + 100 °C
Durchlaßstrom (LED)
Forward current (LED) IF30 –mA
Kollektorstrom (Transistor)
Collector cu rr ent (Transistor) IC–15 mA
Stoßstrom
Surge current
t ≤ 10 μs, D = 0.005
IFM 500 75 mA
Sperrspannung (LED)
Reverse voltage (LED) VR5 – V
Kollektor-Emitter Spannung
(Transistor)
Collector-emitter voltage
(Transistor)
VCE –35 V
Verlustleistung
Total power dissipation Ptot 100 165 mW
Wärmewiderstand Sperrschicht / Umgebung
Thermal resistance junction / ambient
Montage auf PC-Board1) (Padgröße ≥ 16 mm2)
mounting on pcb1) (pad size ≥ 16 mm2)
Sperrschicht / Lötstelle
junction / soldering joint
Rth JA
Rth JS
450
350
450
–
K/W
K/W
1) PC-board: G30/FR4
SFH 331
2009-03-05 3
Kennwerte LED (TA = 25 °C)
Characteristics LED
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 10 mA
λpeak 635 nm
Dominantwellenlänge
Dominant wavelength
IF = 10 mA
λdom 628 nm
Spektrale Bandbreite bei 50% von Irel max
Spectral bandwidth at 50% of Irel max
IF = 10 mA
Δλ 45 nm
Abstrahlwinkel bei 50% von IV(Vollwinkel)
Viewing angle at 50% of IV
2ϕ120 Grad
deg.
Durchlaβspannung
Forward voltage
IF = 10 mA
VF
VF
2.0
< 2.6
V
V
Sperrstrom
Reverse current
VR = 5 V
IR
IR
0.01
< 10 μA
μA
Kapazität
Capacitance
VR = 0V, f = 1 MHz
CO12 pF
Schaltzeiten:
Switching times:
IV from 10% to 90%
IV from 90% to 10%
IF = 100 mA, tp = 10 μs, RL = 50 Ω
tr
tf
300
150
ns
ns
Lichtstärke (Gruppe JK)
Luminous intensity (group JK)
IF = 10 mA
IV6 (4.0 ... 12.5) mcd
2009-03-05 4
SFH 331
Kennwerte Fototransistor (TA = 25 °C, λ = 950 nm)
Characteristics Phototransistor
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 990 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sensitivity
S = 10% of Smax
λ440 ... 1150 nm
Bestrahlungsempfindliche Fläche ( ∅ 240 μm)
Radiant sensitive area ( ∅ 240 μm) A0.038 mm2
Abmessung der Chipfläche
Dimensions of chip area L x B 0.45 x 0.45 mm x mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Kapazität
Capacitance
VCE = 0V, f = 1MHz, E = 0
CCE 5.0 pF
Dunkelstrom
Dark current
VCE = 20V, E = 0
ICEO 1 (≤ 50) nA
Fotostrom
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5V
IPCE ≥ 16 μA
Anstiegszeit/Abfallzeit
Rise time/Fall time
IC = 1 mA, VCC = 5V, RL = 1kΩ
tr, tf7μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 5 A, Ee = 0.1mW/cm2
VCEsat 150 mV
SFH 331
2009-03-05 5
LEDRadiation Characteristics Irel = f (ϕ)
Phototransistor Directional Characteristics Srel = f (ϕ)
LED Relative Spectral Emission Irel = f (λ), TA = 25°C, IF = 20 mA
V(λ) = Standard Eye Response Curve
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
%
rel
λ
OHL02350
Vλ
100
80
60
40
20
0400 450 500 550 600 650 700
nm
Φ
super-red
SFH 331
2009-03-05 6
Forward Current
IF = f (VF), TA = 25 °C
Max. Permissible Forward Current
IF = f (TA)
Forward Current
VF = f (TA), IF = 10mA
10 -1 V
5
super-red
OHL02351
Ι
F
F
V
0
10
1
10
2
10
5
mA
1.0 1.4 1.8 2.2 2.6 3.0 3.4
60
OHL01661
Ι
F
0100604020
A
800 T
10
20
30
40
50
˚C
mA
green
super-red
orange
yellow pure-green
1.4
OHL02106
VF
˚C
A
T
0 20 40 60 80 100
1.6
1.8
2.0
2.2
V
2.4
Rel Luminous Intensity
IV / IV (10 mA) = f (IF), TA = 25 °C
Wavelength at Peak Emission
λpeak= f(TA), IF = 20 mA
Rel Luminous Intensity
IV / IV (25°C) = f (TA), IF = 10 mA
V
V
(10mA)
10
-1 0
10 10
12
10
mA
10
-3
5
OHL02316
F
Ι
5
-2
10
5
-1
10
0
10
1
10
Ι
Ι
55
super-red
green
yellow
orange
super-red
pure-green
550
OHL02104
λ
peak
˚C020406080100
570
590
610
630
650
nm
690
A
T
yellow
green
orange
super-red
pure-green
0.0
OHL02150
˚C
j
0 20 40 60 80 100
V
V
I
I
0.4
0.8
1.2
1.6
2.0
(25 ˚C)
T
Perm. Pulse Handling Capability
IF = f (tp), Duty cycle D = parameter,
TA = 25 °C
Dominant Wavelength
λdom = f (TA), IF = 20 mA
OHL01686
s10-5 10-4 10-3 10-2 10-1 100101
t
DI
TT
P
F
t
P
=
D
=0.005
0.01
0.02
0.05
0.2
0.5
DC
10 1
5
I
F
t
2
10
0.1
p
10 3
mA
yellow
green
orange
super-red
pure-green
550
OHL02105
λ
dom
˚C
A
T
0 20 40 60 80 100
570
590
610
630
650
nm
690
SFH 331
2009-03-05 7
Phototransistor
Rel. Spectral Sensitivity Srel = f (λ)
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
0
OHF00207
400
S
rel
λ
nm
%
500 600 700 800 900 1100
10
20
30
40
50
60
70
80
100
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10 0
10 1
10 2
10 3
-25
nA
0 25 50 75 100
˚C
Photocurrent IPCE = f (VCE),
Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
Photocurrent
IPCE = f (Ee), VCE = 5 V
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
E
OHF01924
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
μ
A
Dark Current
ICEO = f (VCE), E = 0
Photocurrent IPCE/IPCE25° = f (TA),
VCE = 5 V
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2009-03-05 8
SFH 331
Maßzeichnung
Package Outlines
Empfohlenes Lötpaddesign
Recommended Solder Pad Design
Maße in mm (inch) / Dimensions in mm (inch).
GPLY6924
CA
EC
32
41
0.4 (0.016)
0.6 (0.024)
0.18 (0.007)
0.12 (0.005)
0.1 (0.004) typ
0.5 (0.020)
1.1 (0.043)
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.3 (0.091)
2.1 (0.083)
2.6 (0.102)
3.0 (0.118)
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
Package marking
Emission color : super-red (SFH 331)
3.3 (0.130)
3.7 (0.146)
OHLPY439
Padgeometrie für
verbesserte Wärmeableitung
improved heat dissipation
Paddesign for
Lötstoplack
Solder resist
1.1 (0.043)
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
3.3 (0.130)
0.5 (0.020)
7.5 (0.295)
0.4 (0.016)
Cathode marking
Kathoden Markierung / Cu Fläche / 12 mm per pad
2
Cu-area
_
<
3.3 (0.130)
SFH 331
2009-03-05 9
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assu red characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support dev ices or systems 2 with the expres s written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
