1MBI400VH-060L-50 IGBT Modules Power Module (V series) 600V / 400A / 1-in-one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier(DB) Active PFC Industrial machines Outline drawing ( Unit : mm ) Weight: 370g (typ.) Equivalent Circuit 1 FM5F8612 2017/12 1MBI400VH-060L-50 IGBT Modules Absolute Maximum Ratings (at T c= 25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Reverse voltage for FWD Forward current for FWD Symbols V CES V GES IC I C pulse -I C -I C pulse PC VR IF I F pulse Tj Conditions Continuous T c=100C 1ms 1ms 1 device 1ms Junction temperature Operating junction temperature T jop (under switching conditions) Tc Case temperature T stg Storage temperature Isolation between terminal and copper base V iso AC: 1min. voltage (*1) Screw Mounting (*2) Terminals (*3) Torque (*1) All terminals should be connected together when isolation test will be done. . (*2) Recommendable Value : 3.0-5.0 Nm (M5 or M6) (*3) Recommendable Value : 2.5-5.0 Nm (M6) 2 Maximum Ratings 600 20 400 800 400 800 1250 600 600 1200 175 150 Units V V A W V A C 125 -40 ~ 125 2500 VAC 5.0 5.0 Nm FM5F8612 2017/12 1MBI400VH-060L-50 IGBT Modules Electrical characteristics (at T j= 25C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Characteristics min. typ. max. Conditions I CES V GE=0V, V CE=600V - - 2.0 mA I GES V CE=0V, V GE=20V - - 800 nA V GE(th) V CE=20V,I C400mA 6.2 6.7 7.2 V - 1.70 2.00 2.20 1.60 1.90 2.10 2.3 25.6 730 360 135 610 70 1.70 1.60 1.55 1.60 1.50 1.45 1.75 1.65 1.62 1.60 1.50 1.45 2.40 2.05 2.30 - 260 - IGBT+Inverse Diode o Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time V CE(sat) (terminal) V CE(sat) (chip) R G(int) C ies t on tr t r(i) t off tf VF (terminal) V GE=15V, I C=400A V GE=15V, I C=400A VF (chip) IR FWD VF (terminal) V CC=300V.I C=400A V GE=15V R g_on=R g_off=4.7 T j=150oC,L s=30nH V GE=0V, I F=400A V GE=0V, I F=400A V CE=600V V GE=0V, I F=600A Forward on voltage VF (chip) Reverse recovery time t rr T j=25 C T j=125oC T j=150oC T j=25oC T j=125oC T j=150oC V CE=10V, V GE=0V, =1MHz Forward on voltage Reverse Cuurent Units V GE=0V, I F=600A T j=25oC T j=125oC T j=150oC T j=25oC T j=125oC T j=150oC T j=25oC T j=125oC T j=150oC T j=25oC T j=125oC T j=150oC I F=400A V nF nsec 2.05 V 1.0 2.50 mA 2.05 - V nsec 5. Thermal resistance characteristics Items Thermal resistance (1device) Symbols R th(j-c) Conditions IGBT Inverse Diode FWD Characteristics min. typ. max. - - 0.12 0.20 0.16 Units C/W Contact thermal R th(c-f) with Thermal Compound 0.0125 resistance (*1) This is the value which is defined mounting on the additional cooling fin with thermal compound. 3 FM5F8612 2017/12 1MBI400VH-060L-50 Collector current vs. Collector-Emitter voltage (typ.) T j = 25oC / chip IGBT Modules Collector current vs. Collector-Emitter voltage (typ.) T j = 125oC / chip 900 900 VGE=20V 800 VGE= 20V 15V 12V 700 Collector current: IC [A] 600 600 500 500 400 400 10V 300 10V 300 200 200 8V 100 8V 100 0 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage: VCE [V] 5 T j = 25oC / chip 10 9 Collector-Emitter Voltage: VCE [V] 150oC 700 Collector Current: IC [A] 4 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC 125oC 800 3 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 900 2 600 500 400 300 200 100 8 7 6 5 4 3 IC=800A IC=400A IC=200A 2 1 0 0 0 1 2 3 5 4 10 Collector-Emitter Voltage: VCE [V] 15 20 25 Gate-Emitter Voltage: VGE [V] Dynamic Gate Charge (typ.) Capacitance vs. Collector-Emitter Voltage (typ.) V GE= 0V, = 1MHz, T j= 25oC V cc=300V,I C=400A,T j=25oC 20 100 400 Gate-Emitter voltage: VGE [V] 15 Cies 10 Coes 300 VCE 10 200 5 100 0 0 -5 -100 VGE -10 -200 -15 -300 Collector-Emitter voltage: VCE [V] Collector current: IC [A] 700 Capacitance: Cies, Coes, Cres [nF] *** 15V 800 12V Cres 1 -20 0 10 20 30 -400 -2 -1 0 1 2 3 Gate charge: QG[C] Collector-Emitter voltage: VCE [V] 4 FM5F8612 2017/12 1MBI400VH-060L-50 IGBT Modules Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) V cc=300V,V GE=15V,R G=4.7,T j=125oC V cc=300V,V GE=15V,R G=4.7,T j=150oC 1000 1000 ton toff tr Switching time: ton, tr, toff, tf [nsec] ton Switching time: ton, tr, toff, tf [nsec] toff tr 100 tf 100 tf 10 10 0 0 100 200 300 400 500 600 700 100 200 300 400 500 600 700 Collector current: Ic [A] Collector current: Ic [A] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) V cc=300V,I C=400A,V GE= 15V,T j=125oC V cc=300V,V GE= 15V,R G= 4.7,T j=125oC,150oC 40 Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] 10000 tr ton 1000 toff tf 100 10 1 10 100 Tj=125oC Tj=150oC 35 Eoff 30 Eon 25 20 15 10 Err 5 0 0 Gate resistance: RG [] 100 200 300 400 500 600 700 Collector current: Ic [A] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) V cc=300V,I C=400A,V GE=15V,T j=125,150oC +V GE=15V, -V GE=15V,R G=4.7,T j=150oC 900 140 Switching loss: Eon, Eoff, Err [mJ/pulse] Tj=125oC Tj=150oC 120 800 700 Collector current: Ic [A] Eon 100 80 60 Eoff 40 600 500 400 Repetitive pulse 300 200 100 0 20 0 Err 0 1 10 100 Gate resistance: RG [] 5 200 400 600 800 Collector-Emitter voltage: VCE [V] (Main terminals) FM5F8612 2017/12 1MBI400VH-060L-50 IGBT Modules Inverse Diode Forward Current vs. Forward Voltage (typ.) chip FWD Forward Current vs. Forward Voltage (typ.) chip 1200 Inverse Diode Forward current: IF [A] 800 700 FWD Forward current: IF [A] 1000 600 800 500 600 400 Tj=25C 150C 300 200 Tj=25C 200 125C 100 150C 400 125C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 FWD Forward on voltage: VF [V] Inverse Diode Forward on voltage: VF [V] Reverse Recovery Characteristics (typ.) Reverse Recovery Characteristics (typ.) V cc=300V,V GE= 15 V,R G= 4.7,T j=125oC V cc=300V,V GE= 15 V,R G= 4.7,T j=150oC 1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1000 trr Irr 100 0 100 200 300 400 500 600 trr Irr 100 700 0 Forward current: IF [A] 100 200 300 400 500 600 700 Forward current: IF [A] Transient thermal resistance (max.) Thermal resistance: Rth(j-c) [C/W] *** 1 Inverse Diode 0.1 IGBT FWD t 4 Zth rn 1 e n n 1 0.01 n 1 2 3 4 n [sec] 0.0023 0.0301 0.0598 0.0708 rn IGBT 0.01287 0.03263 0.04610 0.02839 Inverse Diode 0.02145 0.05439 0.07684 0.04732 FWD 0.01716 0.04351 0.06147 0.03786 0.001 [C/W] 0.001 0.01 0.1 1 Pulse Width : Pw [sec] 6 FM5F8612 2017/12 1MBI400VH-060L-50 IGBT Modules Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of12/2017 The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright (c)1996-2017 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7 FM5F8612 2017/12 Technical Information IGBT Modules Please refer to URLs below for futher information about products, application manuals and design support. , , URL FUJI ELECTRIC Power Semiconductor WEB site www.fujielectric.co.jp/products/semiconductor/ Global www.fujielectric.com/products/semiconductor/ www.fujielectric.com.cn/products/semiconductor/ Europe www.fujielectric-europe.com/en/power_semiconductor/ North America www.americas.fujielectric.com/products/semiconductors/ Information 1 2 3 4 5 6 IGBT 7 8 9 www.fujielectric.co.jp/products/semiconductor/catalog/ www.fujielectric.co.jp/products/semiconductor/model/ www.fujielectric.co.jp/products/semiconductor/model/igbt/application/ www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/ www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/ www.fujielectric.co.jp/products/semiconductor/journal/ www.fujielectric.co.jp/products/semiconductor/contact/ www.fujielectric.co.jp/products/semiconductor/discontinued/ Global 1 Semiconductors General Catalog 2 Product Information 3 Application Manuals 4 Design Support 5 Mounting Instructions 6 IGBT Loss Simulation Software 7 Fuji Electric Journal 8 Contact 9 Revised and discontinued product information www.fujielectric.com/products/semiconductor/catalog/ www.fujielectric.com/products/semiconductor/model/ www.fujielectric.com/products/semiconductor/model/igbt/application/ www.fujielectric.com/products/semiconductor/model/igbt/technical/ www.fujielectric.com/products/semiconductor/model/igbt/mounting/ www.fujielectric.com/products/semiconductor/model/igbt/simulation/ www.fujielectric.com/products/semiconductor/journal/ www.fujielectric.com/contact/ www.fujielectric.com/products/semiconductor/discontinued/ 1 2 3 4 5 6 IGBT 7 8 9 www.fujielectric.com.cn/products/semiconductor/catalog/ www.fujielectric.com.cn/products/semiconductor/model/ www.fujielectric.com.cn/products/semiconductor/model/igbt/application/ www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/ www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/ www.fujielectric.com.cn/products/semiconductor/journal/ www.fujielectric.com/contact/ www.fujielectric.com.cn/products/semiconductor/discontinued/ 2018-01