1MBI400VH-060L-50
IGBT Modules
Power Module (V series)
600V / 400A / 1-in-one package
■
Features
High speed switching
Voltage drive
Low Inductance module structure
■Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier(DB)
Active PFC
Industrial machines
■Outline drawing ( Unit : mm )
■
Equivalent Circuit
1
FM5F8612
2017/12
Weight: 370g (typ.)
1MBI400VH-060L-50 IGBT Modules
■ Absolute Maximum Ratings (at Tc= 25°C unless otherwise specified)
(*1) All terminals should be connected together when isolation test will be done. .
(*2) Recommendable Value : 3.0-5.0 Nm (M5 or M6)
(*3) Recommendable Value : 2.5-5.0 Nm (M6)
2
1200
150
V
A
600
°C
-40 ~ 125
Operating junction temperature
(under switching conditions)
Tjop
Forward current for FWD
Reverse voltage for FWD
IF
IF pulse
1ms
VR
Items
Symbols
Conditions
Maximum
Ratings
Units
VCES
600
V
Collector-Emitter voltage
V
Collector current
IC
Continuous
400
A
800
IC pulse
1ms
-IC
400
VGES
±20
-IC pulse
1ms
800
N m
-
PC
1 device
Collector power dissipation
1250
W
Junction temperature
Tj
FM5F8612
Tc=100°C
Isolation
voltage
Mounting (*2)
Terminals (*3)
VAC
Case temperature
Tc
125
Viso
AC: 1min.
2500
Screw
Torque
Gate-Emitter voltage
5.0
5.0
175
600
Storage temperature
Tstg
-
between terminal and copper base
(*1)
2017/12
1MBI400VH-060L-50 IGBT Modules
■ Electrical characteristics (at Tj= 25°C unless otherwise specified)
5. Thermal resistance characteristics
(*1) This is the value which is defined mounting on the additional cooling fin with thermal compound.
3
-
2.00
1.60
1.50
1.90
2.50
-
2.05
-
730
IGBT+Inverse Diode
FWD
Tj=125oC
Tj=125oC
-
610
1.0
1.45
1.75
1.70
-
70
-
-
260
-
1.65
1.50
-
1.60
2.05
mA
nsec
-
-
-
-
V
-
-
-
Reverse recovery
time
trr
IF=400A
-
Tj=125oC
Tj=150oC
-
Tj=125oC
Tj=150oC
Tj=25oC
1.62
2.05
Reverse Cuurent
VCE=600V
IR
Tj=150oC
Forward on voltage
VGE=0V, IF=600A
Tj=25oC
VF
(chip)
VGE=0V, IF=600A
-
-
toff
Rg_on=Rg_off=4.7Ω
Tj=150oC,Ls=30nH
Tj=150oC
-
2.0
-
1.60
2.30
2.40
-
2.3
-
Items
Symbols
Conditions
Characteristics
VGE=0V, VCE=600V
mA
Units
min.
typ.
max.
Gate-Emitter
leakage current
IGES
VCE=0V, VGE=±20V
-
-
800
nA
Zero gate voltage
Collector current
ICES
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V,IC400mA
6.2
6.7
7.2
V
Collector-Emitter
saturation voltage
VCE(sat)
(terminal)
VGE=15V, IC=400A
Tj=25oC
-
1.70
-
-
2.20
V
Tj=150oC
-
VCE(sat)
(chip)
VGE=15V, IC=400A
Tj=25oC
-
Tj=150oC
-
-
Internal gate resistance
RG(int)
-
-
Ω
Input capacitance
Cies
VCE=10V, VGE=0V, ƒ=1MHz
-
25.6
nF
2.10
1.60
Turn-on time
ton
-
135
-
VCC=300V.IC=400A VGE=±15V
Turn-off time
-
tf
nsec
tr
-
360
-
tr(i)
-
Forward on voltage
VF
(terminal)
VGE=0V, IF=400A
Tj=25oC
-
VGE=0V, IF=400A
Tj=25oC
-
Units
min.
typ.
max.
V
-
1.55
-
-
-
Tj=125oC
-
1.45
VF
(chip)
IGBT
-
-
-
Tj=125oC
VF
(terminal)
Thermal resistance
(1device)
Rth(j-c)
0.12
Items
Symbols
Conditions
Characteristics
-
-
0.16
°C/W
FWD
-
0.20
Contact thermal
resistance
Inverse Diode
FM5F8612
2017/12
-
Rth(c-f)
with Thermal Compound
-
0.0125
-
1MBI400VH-060L-50 IGBT Modules
4
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj = 25oC / chip
Tj = 125oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE= 15V / chip
Tj = 25oC / chip
Capacitance vs. Collector-Emitter Voltage (typ.)
Dynamic Gate Charge (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25oC
Vcc=300V,IC=400A,Tj=25oC
FM5F8612
2017/12
0
100
200
300
400
500
600
700
800
900
0 1 2 3 4 5
Collector current: IC[A]
Collector-Emitter voltage: VCE [V]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
500
600
700
800
900
0 1 2 3 4 5
Collector current: IC[A]
Collector-Emitter voltage: VCE [V]
VGE= 20V
15V
12V
10V
8V
0
100
200
300
400
500
600
700
800
900
01234
Collector Current: IC[A]
Collector-Emitter Voltage: VCE [V]
125oC
Tj=25oC
0
1
2
3
4
5
6
7
8
9
10
510 15 20 25
Collector-Emitter Voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
IC=800A
IC=400A
IC=200A
1
10
100
010 20 30
Capacitance: Cies, Coes, Cres [nF] ***
Collector-Emitter voltage: VCE [V]
Cies
Coes
Cres
-400
-300
-200
-100
0
100
200
300
400
-20
-15
-10
-5
0
5
10
15
20
-2 -1 0 1 2 3
Collector-Emitter voltage: VCE [V]
Gate-Emitter voltage: VGE [V]
Gate charge: QG[μC]
VGE
VCE
150oC
1MBI400VH-060L-50 IGBT Modules
5
Vcc=300V,IC=400A,VGE=±15V,Tj=125,150oC
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=300V,VGE=±15V,RG=4.7Ω,Tj=125oC
Vcc=300V,VGE=±15V,RG=4.7Ω,Tj=150oC
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
2017/12
Vcc=300V,IC=400A,VGE=±15V,Tj=125oC
+VGE=15V, -VGE=15V,RG=4.7Ω,Tj=150oC
FM5F8612
Vcc=300V,VGE=±15V,RG=4.7Ω,Tj=125oC,150oC
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
10
100
1000
0100 200 300 400 500 600 700
Switching time: ton, tr, toff, tf[nsec]
Collector current: Ic[A]
toff
ton
tr
tf
10
100
1000
10000
110 100
Switching time: ton, tr, toff, tf [nsec]
Gate resistance: RG[Ω]
t
off
ton
tr
tf
0
20
40
60
80
100
120
140
110 100
Switching loss: Eon, Eoff, Err [mJ/pulse]
Gate resistance: RG[Ω]
Eoff
Err
Eon
T
j
=125oC
T
j
=150oC
10
100
1000
0100 200 300 400 500 600 700
Switching time: ton, tr, toff, tf[nsec]
Collector current: Ic[A]
toff
ton
tr
tf
0
5
10
15
20
25
30
35
40
0100 200 300 400 500 600 700
Switching loss: Eon, Eoff, Err [mJ/pulse]
Collector current: Ic[A]
Eon
Eoff
Err
T
j
=125oC
T
j
=150oC
0
100
200
300
400
500
600
700
800
900
0200 400 600 800
Collector current: Ic[A]
Collector-Emitter voltage: VCE [V]
(Main terminals)
Repetitive pulse
1MBI400VH-060L-50 IGBT Modules
6
Transient thermal resistance (max.)
FWD
Forward Current vs. Forward Voltage (typ.) chip
Inverse Diode
Forward Current vs. Forward Voltage (typ.) chip
Reverse Recovery Characteristics (typ.)
Reverse Recovery Characteristics (typ.)
Vcc=300V,VGE=±15V,RG=4.7Ω,Tj=125oC
Vcc=300V,VGE=±15V,RG=4.7Ω,Tj=150oC
FM5F8612
2017/12
0
100
200
300
400
500
600
700
800
0.0 0.5 1.0 1.5 2.0 2.5
Inverse Diode Forward current: IF[A]
Inverse Diode Forward on voltage: VF[V]
125°C
T
j=25°C
150°C
100
1000
0100 200 300 400 500 600 700
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Forward current: IF[A]
trr
Irr
0.001
0.01
0.1
1
0.001 0.01 0.1 1
Thermal resistance:
R
th(j-c) [°C/W] ***
Pulse Width : Pw[sec]
FWD
IGBT
4
11
n
t
nn
erZth
1 2 3 4
n[sec] 0.0023 0.0301 0.0598 0.0708
rnIGBT 0.01287 0.03263 0.04610 0.02839
Inverse Diode 0.02145 0.05439 0.07684 0.04732
[°C/W] FWD 0.01716 0.04351 0.06147 0.03786
n
Inverse Diode
0
200
400
600
800
1000
1200
0.0 0.5 1.0 1.5 2.0 2.5
FWD Forward current: IF[A]
FWD Forward on voltage: VF[V]
125°C
T
j=25°C
150°C
100
1000
0100 200 300 400 500 600 700
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Forward current: IF[A]
trr
Irr
1MBI400VH-060L-50 IGBT Modules
1.
This Catalog contains the product specifications, characteristics, data, materials, and structures as of
The contents are subject to change without notice for specification changes or other reasons. When using a product listed
in this Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license,
either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric
Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or
implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the
use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products
may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate
safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become
faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
･Computers ･OA equipment ･Communications equipment (terminal devices) ･Measurement equipment
･Machine tools ･Audiovisual equipment ･Electrical home appliances ･Personal equipment ･Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment
listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such
equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
･Transportation equipment (mounted on cars and ships) ･Trunk communications equipment
･Traffic-signal control equipment ･Gas leakage detectors with an auto-shut-off feature
･Emergency equipment for responding to disasters and anti-burglary devices ･Safety devices ･Medical equipment
6.
Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to
strategic equipment (without limitation).
･Space equipment ･Aeronautic equipment ･Nuclear control equipment ･Submarine repeater equipment
7. Copyright (c)1996-2017 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the
product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
7
FM5F8612
2017/12
12/2017
Warnings
Global
中国
Europe
North America
日本
Technical Information IGBT Modules
2018-01
Please refer to URLs below for futher information about products, application manuals and design support.
关于本规格书中没有记载的产品信息，应用手册，技术信息等，请参考以下链接。
本データシートに記載されていない製品情報 ,
アプリケーションマニュアル
,
デ ザイン サ ポート
は 以 下の U R L をご参 照 下さい 。
FUJI ELECTRIC Power Semiconductor WEB site
Information
www.fujielectric.com/products/semiconductor/
www.fujielectric.com.cn/products/semiconductor/
www.fujielectric-europe.com/en/power_semiconductor/
www.americas.fujielectric.com/products/semiconductors/
www.fujielectric.co.jp/products/semiconductor/
日本
1
半導体総合カタログ
www.fujielectric.co.jp/products/semiconductor/catalog/
2
製品情報
www.fujielectric.co.jp/products/semiconductor/model/
3
アプリケーションマニュアル
www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
4
デザインサポート
www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/
5
マウンティングインストラクション
www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/
6
IGBT 損失シミュレーションソフト
www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/
7
富士電機技報
www.fujielectric.co.jp/products/semiconductor/journal/
8
製品のお問い合わせ
www.fujielectric.co.jp/products/semiconductor/contact/
9
改廃のお知らせ
www.fujielectric.co.jp/products/semiconductor/discontinued/
中国
1
半导体综合目录
www.fujielectric.com.cn/products/semiconductor/catalog/
2
产品信息
www.fujielectric.com.cn/products/semiconductor/model/
3
应用手册
www.fujielectric.com.cn/products/semiconductor/model/igbt/application/
4
技术信息
www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/
5
安装说明书
www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/
6
IGBT 损耗模拟软件
www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/
7
富士电机技报
www.fujielectric.com.cn/products/semiconductor/journal/
8
产品咨询
www.fujielectric.com/contact/
9
产品更改和停产信息
www.fujielectric.com.cn/products/semiconductor/discontinued/
Global
1
Semiconductors General Catalog
www.fujielectric.com/products/semiconductor/catalog/
2
Product Information
www.fujielectric.com/products/semiconductor/model/
3
Application Manuals
www.fujielectric.com/products/semiconductor/model/igbt/application/
4
Design Support
www.fujielectric.com/products/semiconductor/model/igbt/technical/
5
Mounting Instructions
www.fujielectric.com/products/semiconductor/model/igbt/mounting/
6
IGBT Loss Simulation Software
www.fujielectric.com/products/semiconductor/model/igbt/simulation/
7
Fuji Electric Journal
www.fujielectric.com/products/semiconductor/journal/
8
Contact
www.fujielectric.com/contact/
9
Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/
