RF & Protection Devices
Data Sheet
Revision 1.0, 2010-10-13
BFN18
NPN Silicon High-Voltage Transistors
Edition 2010-10-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFN18
Data Sheet 3 Revision 1.0, 2010-10-13
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Revision History
Page or Item Subjects (major cha nges since previous revision)
Revision 1.0, 2010-10-13
Converted to the new IFX Template.
BFN18
Table of Contents
Data Sheet 4 Revision 1.0, 2010-10-13
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package Information SOT89 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table of Contents
SOT89-3D
Product Name Package Pin Configuration Marking
BFN18 SOT89 1 = B 2 = C 3 = E 4 = C DE
NPN Silicon High-Voltage Transistors
BFN18
Data Sheet 7 Revision 1.0, 2010-10-13
1 Features
Main features:
• Suitable for video output stages TV sets and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN19 (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
1) Pb-containing package may be available upon special request
BFN18
Electrical Characteristics
Data Sheet 6 Revision 1.0, 2010-10-13
2 Electrical Characteristics
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible dama ge to the device.
Table 1 Absolute Maximum Ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector-emitter voltage VCEO – – 300 V –
Collector-base voltage VCBO – – 300 V –
Emitter-base voltage VEBO ––5 V–
Collector current IC– – 200 mA –
Peak collector current ICM – – 500 mA –
Base current IB– – 100 mA –
Peak base current IBM – – 200 mA –
Total power dissipation-
TS = 120 °C
Ptot ––1.5 W–
Junction temperature Tj– – 150 °C –
Storage temperature Tstg -65 – 150 °C –
Table 2 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance.
RthJS ––≤ 20 K/W –
BFN18
Electrical Characteristics
Data Sheet 7 Revision 1.0, 2010-10-13
Table 3 DC Characteristics at TA = 25 °C, Unless Otherwise Specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 300––VIC = 1 mA, IB = 0
Collector-base breakdown voltage V(BR)CBO 300––VIC = 100 µA, IE = 0
Emitter-base breakdown voltage V(BR)EBO 5––VIE = 100 µA, IC = 0
Collector-base cutoff current ICBO ––0.1µAVCB = 250 V, IE = 0
––20 VCB = 250 V, IE = 0,
TA = 150°C
Emitter-base cutoff current IEBO – – 100 nA VEB = 5 V, IC = 0
DC current gain1)
1)Pulse test: t < 300 µs; D < 2%
hFE 25 – – IC = 1 mA, VCE = 10 V
40 – – IC = 10 mA, VCE = 10 V
30 – – IC = 30 mA, VCE = 10 V
Collector-emitter saturation voltage1) VCEsat ––0.5VIC = 20 mA, IB = 2 mA
Base emitter saturation voltage1) VBEsat ––0.9VIC = 20 mA, IB = 2 mA
Table 4 AC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–70–MHzIC = 20 MHz, VCE = 10 V,
f = 20 MHz
Collector base capacitance CCb –1.5–pFVCB = 30 V, f = 1 MHz
BFN18
Characteristic DC Diagrams
Data Sheet 8 Revision 1.0, 2010-10-13
3 Characteristic DC Diagrams
DC Current Gain
hFE = f(IC), VCE = 10 V Operating Range
IC = f(VCEO), TA = 25°C, D = 0
Collector Current
IC = f(VBE), VCE = 10 V Collector Cutoff Current
ICBO = f(TA), VCBO = 200 V
EHP00585BFN 16/18
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
EHP00580BFN 16/18
10
10 V
CEO
10
mA
C
10
3
1
10-1
5
10 10
100
5
Ι
V
5
102
0123
555
10
100
1
100
DC
μ
μ
ms
ms
s
s
EHP00582BFN 16/18
10
0V
BE
1.5
mA
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
5
102
EHP00584BFN 16/18
10
0˚C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
BFN18
Characteristic DC Diagrams
Data Sheet 9 Revision 1.0, 2010-10-13
Transition Frequency
fT = f(IC), VCE = 10 V Collector Base Capacitance Ccb = f(VCB)
Emitter Base Capacitance Ceb = f(VEB)
Total Power Dissipation
Ptot = f(TS)Permissible Pulse Load
Ptotmax / PtotDC = f(TS)
EHP00583BFN 16/18
10
10 10 mA
f
C
10
MHz
10
T
555
Ι
0123
10
3
2
101
5
0 5 10 15 20 25
0
10
20
30
40
50
60
70
80
90
Vcb, Veb [V]
Ccb, Ceb [pF]
Ceb
Ccb
0 50 100 150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ts [°C]
Ptot [W]
10
EHP00581BFN 16/18
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
BFN18
Package Information SOT89
Data Sheet 10 Revision 1.0, 2010-10-13
4 Package Information SOT89
Figure 1 Package Outline
Figure 2 Package Foot Print
Figure 3 Marking Example
SOT89-PO V02
0.45
+0.2
1) E
j
ector pin markin
g
s possible
1.5
30.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
M
B
B
0.15
±0.1
0.35
±0.2
1
1.5
±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.
1)
123
SOT89-MA.vsd
GA
S 56
Manufacturer
BAW78D
Type code
Pin 1
2005, June
Date code (YM)
BFN18
Package Information SOT89
Data Sheet 11 Revision 1.0, 2010-10-13
Figure 4 Tape Dimensions
Packing Description
Reel Ø180 mm = 1.000 Pieces/Reel
Reel Ø330 mm = 4.000 Pieces/Reel
SOT89-TP V02
8
4.3 1.6
4.6
12
Pin 1
Published by Infineon Technologies AG
www.infineon.com