MR501, MR502, MR504 MR506, MR508, MR510 Designers Data Sheet High Current to Smaii Size Low Forward Voltage Drop Void-Free Economical Plastic MINIATURE SIZE, AXIAL LEAD MOUNTED STANDARD RECOVERY POWER RECTIFIERS . . . designed for use in power supplies and other applications having need of a device with the following features: High Surge Current Capability Available in Volume Quantities Package STANDARD RECOVERY POWER RECTIFIERS 100-1000 VOLTS 3 AMPERE Designer's Data for Worst Case Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves representing boundaries on device character- istics are given to facilitate worst case * design. MAXIMUM RATINGS MR} MR} MA | MR | MMR} UMAR Rating Symbo! | 501! 502] 504 | 506 | 508 | 510 | Unit Peak Repetitive Reverse Voltage] Va RM Volts Working Peak Reverse Vottagel Vawe | 100] 200! 400 | 600 | 800 | 1000 DC Blocking Voltage VR Non- Repetitive Peak Reverse Vasm | 150] 250} 450 | 650 } 850 | 1050] Volts Voltage Average Rectified Forward lo Amp Current {Single phase resistive load, Ta = 30 95C, PC Board Mounting) (1) (ELA Standard Conditions ____- 8.0 L = 1/32", Ty = 85C) Non-Repetitive Peak Surge 'esm 100 - | Amp Current (surge applied at (one cycle) rated load conditions) Operating and Storage Junction | Ty, T stg -65 to +175- | C Temperature Range (2) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermat Resistance, Junction to Ambient Rea 28 cw (Recommended Printed Circuit Board Mounting, See Note 2 on Page 4). ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Tye Max Unit Instantaneous Forward Voitage (3) ve Volts {ip = 9.4 Amp, Ty = 175C) - 0.9 1.0 lip = 9.4 Amp, Ty = 25C} - 1.04 14 Reverse Current (rated de voltage) (3) tr HA Ty = 26C - 0.1 5.0 Ty = 100C - 2.8 25 STYLE 1: PIN 1. CATHODE 2. ANODE CASE 267-01 (1) Derate for reverse power dissipation. Ses Note on Page 2. (2) Derate as shown in Figure 1. (3) Pulse Test: Putse Width = 300 us, Duty Cycle = 2.0%. 1143 MECHANICAL CHARACTERISTICS Case: Void Free, Transfer Molded Finish: External Leads are Plated, Leads are readily Sotderable Polarity: Indicated by Cathode Band Weight: 1.1 Grams (Approximately) Maximum Lead Temperature for Soldering Purposes: 300C, 1/8 from case for 10 s at 5.0 Ib, tensionMR501, MR502, MR504, MR506, MR508, MR510 (continued) NOTE 1: DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 200 vaits, Proper derating may be accomplished by use of equation (1): Tatemax) * Tatmax) ResaPFiav) ResaPatav) m where TA(max) = Maximum allowable ambient temperature Ty (max) * Maximum aliowabie junction temperature (175C or the tamperature at which ther- mai runaway occurs, whichever is lowest. ) Priay) = Average forward power dissipation PrRiav) = Average reverse power dissipation Reta * Junction-to-ambient thermal resistance Figure 1 permits easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figure solves for a reference temperature as determined by equation (2): TR = TJimax) ReyaPR(AV) (2) Substituting equation (2) into equation (1) yields: Tatmax) = TR - ResaPriav) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where Ty = 175C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figure 14 asa difference in the rate of change of the slope in the vicinity of 165C. The data of Figure 1 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an @quivalent dc voltage to use for conservative design; i.e.: Vailequiv) = Vin (PK) x F (4) The Factor F is derived by considering the properties of the various rectifier circuits and the rectifiers reverse characteristics. Example: Find Ta(max) for MR510 operated in @ 400 Voltde supply using 2 full wave center-tapped circuit with capacitive filter such that Ipc = 6.0 A, (le(ay) = 3.0 Al, ((pKy/ltav) = 10, Input Voltage = 283 V(rms) (line to center tap}, Raja = 28C/W. Step 1: Find Vetequiv}. Read F = 1.11 from Table 1 -. VR equiv) = 1-41)(283)(1.11) = 444 V Step 2: Find Tp from Figure 1. Read Tp = 167C @ VR = 444 V & Roya = 28C/W. Step 3: Find Pei ay) from Figure 8. Read Priay) = 4W @ re = 10& lejay) =3.0A Step 4: Find TAfmax) from equation (3). Ta(max) = 167-(28) {4) = 55C. TABLE | - VALUES FOR FACTOR F Circuit Half Wave Full Wave, Bridge Concer: Tenved* t Load Resistive | Capacitive | Resistive Capacitive Resistive | Capacitive Sine Wave 0.45 1.14 0.45 O55 0.90 4.17 Square Wave 0.61 1.22 061 0.61 1.22 1.22 Note that Vryex) ~2 VintPK} FIGURE t - MAXIMUM REFERENCE TEMPERATURE 175 Tr, REFERENCE TEMPERATURE (C) & Vp, DC REVERSE VOLTAGE (VOLTS) tUse line to center tap voltage for Vin. 1144 Peravi, AVERAGE FORWARD POWER DISSIPATION (WATTS) FIGURE 2 FORWARD POWER DISSIPATION px capacitive Loans ~PX) = "avy 8.0 7 6.0 Wg Ty 1750C 1.0 3.0 4.0 6.0 lF(AV), AVERAGE FORWARD CURRENT (AMP) 70 8.0MR501, MR502, MR504, MR506, MR508, MR510 (continued) IF(AV), AVERAGE FORWARD CURRENT (AMP) {e(av), AVERAGE FORWARD CURRENT (AMP) ig(av}, AVERAGE FORWARD CURRENT (AMP) 40 CURRENT DERATING (Reverse Power Loss Neglected) FIGURE 3 PC BOARD MOUNTING =28CW PK) _ hav) Rasa = 50CW up NOTE: FOR PK) =m 60 180 Ta, AMBIENT TEMPERATURE (C) FIGURE 4 SEVERAL LEAD LENGTHS = 1/32" RESISTIVE LOAD BOTH LEADS TO HEAT SINK WITH LENGTHS AS SHOWN 60 80 100 120 140 Ti, LEAD TEMPERATURE (C) 160 180 FIGURE 5 1/8 LEAD LENGTH NPk) = w (RESISTIVE 1(AV) LOAD) WAVE BOTH TO SINK WITH EQUAL LENGTHS PK) CAPACITIVE LOADS = Nav) 60 80 100 120 140 TL, LEAD TEMPERATURE (C} 160 1145 ig, INSTANTANEOUS FORWARD CURRENT (AMP) 6y, COEFFICIENT (mv/C} FIGURE 6 FORWARD VOLTAGE Ty = 25C 04 1.6 2.0 24 28 ve, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 3.2 FIGURE 7 FORWARD VOLTAGE TEMPERATURE COEFFICIENT +5.0 43.0 +2.0 02 O05 10 20 50 10 20 $0 if, INSTANTANEOUS FORWARD CURRENT (AMP) 100-200MR501, MR502, MR504, MR506, MR508, MR510 (continued) Nt), TRANSIENT THERMAL Rej., THERMAL RESISTANCE FIGURE 8 MAXIMUM SURGE CAPABILITY Van MAY BE APPLIEO BETWEEN EACH CYCLE OF SURGE. Ty NOTED Tj PRIOR TO SURGE REPETITIVE ifsm, PEAK HALF WAVE CURRENT (AMP) 1 10 3.0 50 7.0 10 NUMBER OF CYCLES 2.0 20 70 100 FIGURE 9 TYPICAL REVERSE CURRENT 100 VR = 100% VOUT, q 50% RATED VOLT 20% RATED VOL & Lat = 50 = 5. o cer 2 20 Ma mw 10 <= = S in TJ, JUNCTION TEMPERATURE (C) THERMAL CHARACTERISTICS FIGURE 10 THERMAL RESPONSE + ret {+F f JF t t + FF , f, oo oe | = Pol Pok DUTY CYCLE = tp/ty LEAB LENGTH = 1/4 4 057_LI ty PEAK POWER, Ppk, is peak of an TIME equivalent square power pulse. = a Ca B02} ati =Ppk + Rast (0+ (1D) ety + tp) + tp) rit] <4 N 0. =Py,e -D) er 2 Len Te tele rip) ret Lr The of the lead should be messured | . . a La using s thermocouple placed on the lead as close as & 01 ATJL = the increase in junction temperature shove the possible to the tie point. The thermal mess con =t1 = persture. | Z nected to the tie point is normally targe enough -} we E10) = normalized vatue of transient thermal 20 that it will not significantly respond to heat -|- = O.O5 at time, 1, ie: surges generated in the diode as a result of pulsed {-~7 & 0.03. "tt + tp) = normalized value of ion once steady itions are achieved. T_| a transient thermal resistance Using the messured value of TL, the junction tem |] 9.02}-#t time tj + tp, ete. perry may be di ined by: |__| 444 Ii Lit Tye TL + OTL ool LT | [TT L THE a TTT 0.2 O05 1.0 2.0 5.0 10 20 50 00 200 500 1.0k 20k 5.0k Wk 2k t, TIME (ms) NOTE 2 AMBIENT MOUNTING DATA Osta shown for thermal resistence junction-to-ambient (Rg ya) for the mountings shown is to be used as typical guideline values FIGURE 11 STEADY-STATE THERMAL RESISTANCE for preliminary engineering oF in case the tie point tempereture cannot be measured. LEAD 70 HEAT SINK 7 TYPICAL VALUES FOR RgJaIN STILL AIR INSIGNIFICANT HEAT FLOW OTHER "METHOD. Peaa 5 ~ TYPICAL oa s MOUNTING METHOD 1 3 P.C, Board Where Available Copper eS Surtace area is small. z MOUNTING METHOD 3 t| t S PC. Boord with z To Fs 1-1/2" x 1-1/2 Copper Surtece 3 SINK, EQUAL LTTE LENGTH o MOUNTING METHOD 2 t= Vector Push-in Terminals T-28 L, LEAD LENGTH (INCHES) Pt =] IE ct . Boerd Ground Plane 1146MR501, MR502, MR504, MR506, MR508, MR510 (continued) FIGURE 12 APPROXIMATE THERMAL CIRCUIT MODEL THERMAL CIRCUIT MODEL (For Heet Conduction Through the Leads) Rosia) Rasix) Feu) Pesix) a) Tak) > Thad Teta) Ty Tours) TLtK) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total feed jength, towest values occur when ons side of the rectifier is brought as close es possible to the heat sink. Terms in the modal signify: Ta = Ambient Temperature Aigg = Thermal Resistance, Heat Sink ta Ambient TL = Lead Temperature Rey = Thermal Flesistence, Leed to Heat Sink Tc ~ Case Temperature Rey Thermal Resistance, Junc- tion to Case Ty Junction Temperature =P = Total Power Dissipation = Pe+ Pa Pe = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to node and cathode sides respectively.) Values for thermal resistance components are: Rg = 46C/W/IN. Typically and 48C/W/IN Maximum. Figy = 10C/W Typically and 16C/W Maximum. The maximum lead temperature may be found as follows: Tem Ta(maxd ~ 4 TIL? PO where Ty. * Rout TYPICAL DYNAMIC CHARACTERISTICS FIGURE 13 FORWARD RECOVERY TIME ttr. FORWARO RECOVERY TIME Ga) (Gvershoot not Ig = 200 mA) Ig, FORWARD CURRENT (AMP) FIGURE 15 RECTIFICATION WAVEFORM EFFICIENCY 1.0 kHz VALUE o, EFFICIENCY FACTOR REPETITION FREQUENCY (kHz) (Ty = 25C) FIGURE 14 REVERSE RECOVERY TIME 20 = So 2 o Fr Ip/lp, DRIVE CURRENT RATIO n o ter, REVERSE RECOVERY TIME (us) a a FIGURE 16 JUNCTION CAPACITANCE 70 30 20 C, CAPACITANCE (pF) 0.1 2.0 100 Vp, REVERSE VOLTAGE (VOLTS) 1147MR501, MR502, MR504, MR506, MR508, MR510 (continued) RECTIFIER EFFICIENCY NOTE FIGURE 17 SINGLE-PHASE HALF-WAVE RECTIFIER CIRCUIT The rectification efficiency factor a shown in Figure 15 was calculated using the formula: V2o (de) Pp R V2 4 (de) -lde) . 100% (1) Pirms) V2 oiems) V? olac) + Vo (de) al For a sine wave input Vm sin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes: Van n?Re 4 sine) = - 100% = - 100% = 40.6% (2) m WT 4Ry 1148 V2 For a square wave input of amplitude Vip, the efficiency 2RL factor becomes: (square) = v2, - 100% = 50% (3) Re (A full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse re- covery time of the diode (Figure 14) becomes significant, resulting in an increasing ac voitage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor o, as shown on Figure 15. It should be emphasized that Figure 15 shows waveform efficien- cy only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of V, with a true rms ac voltmeter and the dc component with adc voltmeter. The data was used in Equation 1 to obtain points for the figure.