BAV100/101/102/103
500mW Hermetically Sealed Glass
High Voltage Switching Diodes
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
MINI MELF
Features
High Voltage Switching Device
Mini Melf package
Surface device type mounting
Hermetically sealed glass
Compression bonded construction
All external surface are corrosion resistant
and leads are readily solderable
RoHS compliant
Matte Tin (Sn) lead finish
Color band indicates Negative Polarity
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings
Type Number Symbol Value Units
Repetitive Peak Reverse Voltage VRRM
250 V
Average Rectified Forward Current IF(AV) 200 mA
Non- Repetitive Peak Forward Surge Current
Pulse Width =1.0 Second
Pulse Width = 1.0 usecond IFSM 1.0
4.0 A
Power Dissipation Pd 500 mW
Operating and Storage Temperature Range TJ, TSTG -65 to + 200 OC
Electrical Characteristics
Type Number Symbol Min Max Units
Breakdown Voltage BAV100 IR=100uA
BAV101 IR=100uA
BAV102 IR=100uA
BAV103 IR=100uA
BV
60
120
200
250
V
Forward Voltage IF= 100mA VF 1.0 V
Peak Reverse Current BAV100 VR=50V
BAV101 VR=100V
BAV102 VR=150V
BAV103 VR=200V
IR
-
100
100
100
100
nA
Thermal Resistance, Junction to Ambient RӨJA 350 oC/W
Junction Capacitance VR=0, f=1.0MHz Cj - 5.0 pF
Reverse Recovery Time (Note) trr - 50 nS
Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, RL=100Ω.
Version: A07
RATINGS AND CHARACTERISTIC CURVES (BAV100/101/102/103)
Fig. 1 Reverse Current vs. Junction Temperature
µ
0 40 80 120 160
0.01
0.1
1
10
1000
I - Reverse Current ( A )
R
Tj- Junction Temperature ( °C)
200
100
Scattering Limit
VR=V
RRM
Vishay Semiconductors
www.vishay.com
3
Typica l Charact eristics (Tamb = 25 °C unless otherwise specified)
Fig. 2 Forward Current vs. Forward Voltage
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current ( mA )
F
VF- Forward Voltage ( V )
2.0
Scattering Limit
T
j
=25°C
Vishay Semiconductors
www.vishay.com
3
Typica l Charact eristics (Tamb = 25 °C unless otherwise specified)
Fig. 3 Differential Forward Resistance vs. Forward Current
0.1 1 10
1
10
100
1000
r - Differential Forward Resistance ( )
f
I
F
- Forward Current ( mA )
100
Ω
T
j
=25°C
Version: A07
