To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMA1032CZ
20V Complementary PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
Features
x Q1: N-Channel
3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V
R
DS(ON) = 86 m: @ VGS = 2.5V
x Q2: P-Channel
–3.1 A, –20V. RDS(ON) = 95 m: @ VGS = –4.5V
R
DS(ON) = 141 m: @ VGS = –2.5V
xLow profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDS Drain-Source Voltage 20 –20 V
VGS Gate-Source Voltage r12 ±12 V
Drain Current – Continuous (Note 1a) 3.7 –3.1
ID – Pulsed 6 –6
A
Power Dissipation for Single Operation (Note 1a) 1.4
PD
(Note 1b) 0.7
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 qC
Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
032 FDMA1032CZ 7’’ 8mm 3000 units
FDMA1032CZ 20V Complementary PowerTrench MOSFET
MicroFET 2x2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
S1
G1
D1
S2
G2
D2
Free from halogenated compounds and antimony
oxides
HBM ESD protection level >2kV (Note 3)
July 2014
(W)
FDMA1032CZ Rev B5
airchild Semiconductor Corporation
F
1020
FDMA1032CZ Rev B5 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 PA
VGS = 0 V, ID = –250 PA
Q1
Q2
20
–20
V
'BVDSS
'TJ
Breakdown Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC
ID = –250 μA, Referenced to 25qC
Q1
Q2
15
–12
mV/qC
IDSS Zero Gate Voltage Drain
Current
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
Q1
Q2
1
–1
PA
IGSS Gate-Body Leakage VGS = ±12 V, VDS = 0 V All ±10 PA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA
VDS = VGS, ID = –250 μA
Q1
Q2
0.6
–0.6
1.0
–1.0
1.5
–1.5
V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC
ID = –250 μA, Referenced to 25qC
Q1
Q2
–4
4
mV/qC
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125qC
Q1 37
50
53
68
86
90
m:
RDS(on) Static Drain-Source
On-Resistance
VGS = –4.5V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125qC
Q2 60
88
87
95
141
140
m:
gFS Forward Transconductance VDS = 10 V, ID = 3.7 A
VDS = –10 V, ID = –3.1 A
Q1
Q2
16
–11
S
Dynamic Characteristics
Ciss Input Capacitance Q1
Q2
340
540
pF
Coss Output Capacitance Q1
Q2
80
120
pF
Crss Reverse Transfer
Capacitance
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz Q1
Q2
60
100
pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time Q1
Q2
8
13
16
24
ns
tr Turn-On Rise Time Q1
Q2
8
11
16
20
ns
td(off) Turn-Off Delay Time Q1
Q2
14
37
26
59
ns
tf Turn-Off Fall Time
Q1
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 :
Q2
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :Q1
Q2
3
36
6
58
ns
Qg Total Gate Charge Q1
Q2
4
7
6
10
nC
Qgs Gate-Source Charge Q1
Q2
0.7
1.1
nC
Qgd Gate-Drain Charge
Q1
VDS = 10 V, ID = 3.7 A, VGS = 4.5 V
Q2
VDS = –10 V,ID =– 3.1 A,
VGS =– 4.5 V
Q1
Q2
1.1
2.4
nC
FDMA1032CZ 20V Complementary PowerTrench MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Source-Drain Diode Forward Current Q1
Q2
1.1
–1.1
A
VSD Source-Drain Diode Forward
Voltage
VGS = 0 V, IS = 1.1 A (Note 2)
VGS = 0 V, IS = –1.1 A (Note 2)
Q1
Q2
0.7
–0.8
1.2
–1.2
V
trr Diode Reverse Recovery
Time
Q1
Q2
11
25
ns
Qrr Diode Reverse Recovery
Charge
Q1
IF = 3.7 A, dIF/dt = 100 A/μs
Q2
IF = –3.1 A, dIF/dt = 100 A/μs
Q1
Q2
2
9
nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the
user's board design.
(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RTJA = 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a)86 oC/W when
mounted on a 1
in2pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
FDMA1032CZ 20V Complementary PowerTrench MOSFET
FDMA1032CZ Rev B5 (W)
FDMA1032CZ Rev B5 (W)
Typical Characteristics Q1 (N-Channel)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1 1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V 2.0V
V
GS
= 4.5V
3.0V
3.5V
1.5V
0.8
1
1.2
1.4
1.6
1.8
2
0123456
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3.7A
V
GS
= 4.5V
0.03
0.05
0.07
0.09
0.11
0.13
0246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 1.85A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
0.511.522.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ 20V Complementary PowerTrenchMOSFET
FDMA1032CZ Rev B5 (W)
Typical Characteristics Q1 (N-Channel)
0
2
4
6
8
10
0246810
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3.7A V
DS
= 5V
10V
15V
0
100
200
300
400
500
0 5 10 15 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
TJA
= 173°C/W
T
A
= 25°C
10ms
1ms
100us
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
TJA
= 173°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=173 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ 20V Complementary PowerTrenchMOSFET
FDMA1032CZ Rev B5 (W)
Typical Characteristics: Q2 (P-Channel)
0
1
2
3
4
5
6
0 0.4 0.8 1.2 1.6 2
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
3.0V
2.5V
3.5V
V
GS
=
45V
2.0V
1.5V
0.6
1
1.4
1.8
2.2
2.6
0123456
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -2.0V
-3.5V
-4.5V
-3.0V
-2.5V
-4.0V
Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -3.1A
V
GS
= -4.5V
0.04
0.08
0.12
0.16
0.2
0246810
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -1.55A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
00.511.522.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ 20V Complementary PowerTrenchMOSFET
FDMA1032CZ Rev B5 (W)
Typical Characteristics: Q2 (P-Channel)
0
2
4
6
8
10
0 2 4 6 8 101214
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -3.1A
V
DS
= -5V
-15V
-10V
0
200
400
600
800
1000
048121620
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 18. Gate Charge Characteristics. Figure 19. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s 1s
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
T
JA
= 173
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
T
JA
= 173°C/W
T
A
= 25°C
Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=173 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ 20V Complementary PowerTrenchMOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06
MOSFET
FDMA1032CZ 20V Complementary PowerTrench
FDMA1032CZ Rev B5 (W)
TRADEMARKS
The following includes regi stered and unr egistered trademarks an d service marks, owned by Fairchild Se miconductor and/or its global subsid iaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System Gen eral Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose f ailure to perform when prope rly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor ®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
仙童 ™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without not ice.
Preliminary First Production Datasheet contains preliminary data; supplementary dat a will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semi conductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industr y. All manufactures of semicondu ctor products are experie ncing counterfeiting of their
parts. Customers who inadvert ently p urchase count erfeit parts experie nce many pro blems such as loss o f brand r eput ation, substand ard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers f rom the
proliferation of count erfeit parts. Fa irchild stro ngly encourages custo mers to purchase Fairchild parts either dir ectly from Fairchild or from Auth orized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encoura ge our customers to do their part in stopping this practice by buying direct or from authorized distr ibutors.
Rev. I68
tm
®
MOSFET
FDMA1032CZ 20V Complementary PowerTrench
FDMA1032CZ Rev B5 (W)
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC