VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A FEATURES * High voltage * Electrically isolated base plate * 3500 VRMS isolating voltage * Industrial standard package * Simplified mechanical designs, rapid assembly * High surge capability * Large creepage distances * UL approved file E78996 MAGN-A-PAK * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION IT(AV) 230 A Type Modules - thyristor, standard Package MAGN-A-PAK This VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) VALUES 85 C 230 50 Hz 7500 60 Hz 7850 510 IT(RMS) ITSM I2t 50 Hz 280 60 Hz 260 I2t 280 VDRM/VRRM TJ Range UNITS A kA2s kA2s 800 to 2000 V -40 to +130 C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 130 C MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSK.230- VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 50 Revision: 26-Jul-2018 Document Number: 93053 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state non-repetitive, surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave Maximum I2t for fusing I2t C 510 No voltage reapplied 7500 100 % VRRM reapplied 6300 t = 10 ms t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms No voltage reapplied t = 8.3 ms 7850 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 10 ms t = 8.3 ms 280 256 198 2800 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.03 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.07 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.77 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73 ITM = x IT(AV), TJ = TJ maximum, 180 conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.59 IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 C 500 IL Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 s, TJ = 25 C 1000 Maximum holding current Maximum latching current kA2s 181 t = 0.1 ms to 10 ms, no voltage reapplied VT(TO)1 VTM A 6600 Low level value or threshold voltage Maximum on-state voltage drop UNITS 230 As AC switch t = 8.3 ms Maximum I2t for fusing VALUES kA2s V m V mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES Typical delay time td 1.0 Typical rise time tr TJ = 25 C, gate current = 1 A dIg/dt = 1 A/s, Vd = 0.67 % VDRM Typical turn-off time tq ITM = 300 A; dI/dt = 15 A/s; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100 2.0 UNITS s 50 to 150 BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s 3000 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/s VALUES UNITS TRIGGERING PARAMETER SYMBOL TEST CONDITIONS PGM tp 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 TJ = -40 C 4.0 Maximum peak gate power Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger VGT IGT TJ = 25 C Anode supply = 12 V, resistive load; Ra = 1 3.0 TJ = TJ maximum 2.0 TJ = - 40 C 350 TJ = 25 C Anode supply = 12 V, resistive load; Ra = 1 200 TJ = TJ maximum 100 W A V mA Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/s Revision: 26-Jul-2018 Document Number: 93053 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS VALUES TJ -40 to +130 Storage temperature range TStg -40 to +150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth, and greased 0.02 C K/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. MAGN-A-PAK to heatsink Mounting torque 10 % UNITS busbar to MAGN-A-PAK 4 to 6 Approximate weight Case style Nm 500 g 17.8 oz. MAGN-A-PAK R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES VSK.230- RECTANGULAR CONDUCTION AT TJ MAXIMUM 180 120 90 60 30 180 120 90 60 30 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 UNITS K/W 130 VSK.230..Series RthJC (DC) = 0.125 K/W 120 110 O Conduction Angle 100 90 30 60 80 90 120 70 180 60 0 40 80 120 160 200 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 240 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 VSK.230..Series RthJC (DC) = 0.125 K/W 120 110 O Conduction Period 100 90 30 80 60 90 70 120 DC 180 60 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Revision: 26-Jul-2018 Document Number: 93053 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com 200 RMS limit 300 150 O Conduction Angle 100 VSK.230..Series Per Junction TJ = 130 C 50 0 0 50 100 200 150 250 Average On-state Current (A) Peak Half Sine Wave On-State Current (A) 250 180 120 90 60 30 7000 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 350 Vishay Semiconductors Maximum Average On-State Power Loss (W) 180 120 90 60 30 7500 300 250 DC 200 RMS limit 150 O Conduction Period 100 VSK.230..Series Per Junction TJ = 130 C 50 0 0 50 100 150 200 250 300 350 400 Average On-State Current (A) 5000 4500 4000 3500 3000 1 6500 6000 5500 5000 4500 4000 3500 3000 0.01 0.1 1 Pulse Train Duration (s) 60 1K 0.0 40 A= /W R - 300 W K/ 400 R thS 0. 1 12 K/ K/ W W 0.1 6K / 0.2 W K/W 0.2 5K 0.3 /W K/W 0. 180 120 90 60 30 03 Maximum Total On-State Power Loss (W) VSK.230..Series Per Junction 0. Conduction Angle 100 Maximum non repetitive surge current vs. pulse drain duration.Control of conduction may not be maintained. Initial TJ = 130 C No voltage reapplied Rated VRRM applied 7000 W K/ 06 0. /W K 8 500 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 0 0. O VSK.230..Series Per Junction Fig. 6 - Maximum Non-Repetitive Surge Current 700 O at 60 Hz 0.0083 s at 50 Hz 0.0100 s 5500 Fig. 4 - On-State Power Loss Characteristics 600 Initial TJ = 130 C 6000 Fig. 3 - On-State Power Loss Characteristics 350 At any rated load condition and with rated VRRM applied following surge 6500 200 VSK.230..Series Per Module TJ = 130 C 100 0 0 100 200 300 400 Total RMS Output Current (A) 500 20 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 7 - On-State Power Loss Characteristics Revision: 26-Jul-2018 Document Number: 93053 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors + 0. /W R - 0.2 K/W 750 1 0.0 900 6K A= W 0.1 R thS 1050 W K/ /W - K/ 3K 180 (Sine) 180 (Rect.) W K/ 1200 0.1 0 .0 08 1350 06 0. Maximum Total Power Loss (W) 1500 K/W 600 1.5 K 450 /W 2 x VSK.230..Series Single phase bridge connected TJ = 130 C 300 150 0 0 50 100 150 200 250 300 350 400 450 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 8 - On-State Power Loss Characteristics R thS W K/ A= 0.0 0.1 /W 6K W 1000 W 1200 0.0 01 W K/ 1400 0.0 K/ 120 (Rect.) - K/ 5K 02 04 0.0 03 1600 0. 0. 0. + 1800 0. /W 05 K/ 8K 600 3 x VSK.230..Series Three phase bridge connected TJ = 130 C 400 200 /W R - 800 W Maximum Total Power Loss (W) 2000 K/W 0.12 K/W 0.16 K/W 0.25 K /W 0 0 100 200 300 400 500 Total Output Current (A) 600 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) 10 000 1000 TJ = 25 C TJ = 130 C VSK.230..Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-State Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Qrr - Typical Reverse Recovery Charge (C) Instantaneous On-State Current (A) Fig. 9 - On-State Power Loss Characteristics 1800 VSK.230..Series Per Junction TJ = 130 C 1600 ITM = 800 A 1400 500 A 300 A 1200 200 A 1000 100 A 800 50 A 600 400 200 0 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 11 - Reverse Recovery Charge Characteristics Revision: 26-Jul-2018 Document Number: 93053 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated diF/dt : 20 V, 10 ; tr < = 1s b) Recommended load line for < = 30% rated di/dt : 10 V, 20 tr < = 1 s 10 (1) PGM = 10 W, tp = 4 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 40 W, tp = 1 ms (4) PGM = 60 W, tp = 0.66 ms (a) (b) 1 Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 VSK.230 Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) ZthJC - Transient Thermal Impedance (K/W) Fig. 12 - Gate Characteristics 1 Steady State Value: R thJC = 0.125 K/W (DC Operation) 0.1 VSK.230.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS KT 230 1 2 3 - 20 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - * None = standard production * PbF = lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 Revision: 26-Jul-2018 Document Number: 93053 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Two SCRs doubler circuit CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKT... KT ~ ~ + + - K1G1 G2K2 Available 800 V: contact factory for different requirements SCR/diode doubler circuit, positive control VSKH... KH ~ ~ + + - K1G1 Available 800 V: contact factory for different requirements SCR/diode doubler circuit, negative control VSKL... KL ~ ~ + + - - Available 800 V: contact factory for different requirements Two SCRs common cathodes VSKK... KK + + - - - G2K2 Available 800 V: contact factory for different requirements Two SCRs common anodes VSKV... KV - - + + + + K1G1 G2K2 Available 800 V: contact factory for different requirements LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95086 Revision: 26-Jul-2018 Document Number: 93053 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) O 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes * Dimensions are nominal * Full engineering drawings are available on request * UL identification number for gate and cathode wire: UL 1385 * UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VSKT230-16 VSKT230-18 VSKT230-12 VSKL230-20D32 VSKH230-20 VSKH230-16D25 VSKT230-20 VSKH23012 VSKH230-08 VSKT230-08 VSKH230-16N VSKH230-20D32 VSKH230-16 VSKL230-12 VSKL230-16 VSKL23016D25 VS-VSKH230-14PBF VS-VSKH230-08PBF VS-VSKH230-20PBF VS-VSKV230-08PBF VS-VSKK230-12PBF VSKH230-04 VSKH230-12PBF VSKH230-14 VSKH230-16PBF VSKH230-20PBF VSKT230-04 VSKT230-08PBF VSKT230-12PBF VSKT230-14 VSKT230-14PBF VSKT230-16PBF VSKT230-20PBF VS-VSKL230-12PBF VSVSKT230-04PBF VS-VSKT230-14PBF VS-VSKT230-08PBF VS-VSKT230-12PBF VS-VSKH230-12PBF VSVSKL230-16PBF VS-VSKH230-16PBF VS-VSKH230-04PBF VS-VSKK230-20PBF VS-VSKT230-18PBF VSVSKT230-20PBF VS-VSKT230-16PBF