MOC8080 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l Dimensions in mm 2.54 UL recognised, File No. E91231 6.9 6.1 DESCRIPTION APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 6 5 3 4 8.3 max. 5.3 max. 1.4 0.9 l 2 8.9 max. The MOC8080 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High BVceo ( 55V ) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available 1 2.54 min. 0.48 0.25 15 max. ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 5V 100mW OUTPUT TRANSISTOR OPTION SM OPTION G SURFACE MOUNT Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 55V 55V 5V 150mW 8.3 max POWER DISSIPATION 1.2 0.6 10.2 9.5 1.4 0.9 0.26 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 28/3/03 DB92203-AAS/A4 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) 55 55 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 5 Output Collector Current ( IC )(Note 2) 50 Input to Output Isolation Voltage VISO 1.5 V IF = 10mA 10 A VR = 3V V V IC = 1mA (note 2) IC = 100A V nA IE = 100A VCE = 10V mA 10mA IF , 5V VCE V 1mA IF , 1mA IC VRMS VPK (note 1) (note 1) VIO = 500V (note 1) s s s s VCC= 10V, IF= 5mA, RL = 100 , fig.1 100 Collector-emitter Saturation VoltageVCE(SAT) 1.0 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Turn on Time Output Turn off Time Output Rise Time Output Fall Time Note 1 Note 2 ton toff tr tf TEST CONDITION 3.5 95 1 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V Input IF = 10mA ton 100 toff tr Input 28/3/03 Output tf Output 10% 10% 90% 90% DB92203-AAS/A4 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) Collector power dissipation PC (mW) 200 150 100 50 10000 5000 0 1000 800 500 100 50 VCE = 5V TA = 25C 10 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 Forward Current vs. Ambient Temperature 10 20 50 100 50mA 100 TA = 25C 20 Collector current IC (mA) 80 Forward current IF (mA) 5 Collector Current vs. Collector-emitter Voltage 100 60 40 20 0 10mA 5mA 80 60 40 2mA 20 IF = 1mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 2 3 4 5 Normalised Current Transfer Ratio vs. Ambient Temperature IF = 1mA IC = 1mA 1.0 1 Collector-emitter voltage VCE ( V ) Normalised current transfer ratio Collector-emitter saturation voltage VCE(SAT) (V) 2 Forward current IF (mA) Ambient temperature TA ( C ) 0.8 0.6 0.4 0.2 0 1.5 IF = 10mA VCE = 5V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( C ) 28/3/03 1 100 -30 0 25 50 75 Ambient temperature TA ( C ) 100 DB92203-AAS/A4