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Rev.2.00, Mar.01.2005, page 1 of 7
CR04AM-12
Thyristor
Low Power Use
REJ03G0354-0200
Rev.2.00
Mar.01.2005
Features
• IT (AV) : 0.4 A
• VDRM : 600 V
• IGT : 100 µA
• Glass Passivation Type
Outline
2
1
3
PRSS0003EA-A
(Package name: TO-92)
1. Cathode
2. Anode
3. Gate
31
2
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak reverse voltage VRRM 600 V
Non-repetitive peak reverse v oltag e VRSM 720 V
DC reverse voltage VR (DC) 480 V
Repetitive peak off-state voltageNote1 V
DRM 600 V
DC off-state voltageNote1 V
D (DC) 480 V
CR04AM-12
Rev.2.00, Mar.01.2005, page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.63 A
Average on-state current IT (AV) 0.4 A
Commercial frequency, sine half wave
180° conduction, Ta = 54°C
Surge on-state current ITSM 10 A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
I2t for fusing I2t 0.4 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 0.23 g Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.5 mA Tj = 125°C, VRRM applied
Repetitive peak off-state current IDRM — — 0.5 mA
Tj = 125°C, VDRM applied,
RGK = 1 kΩ
On-state voltage VTM — — 1.2 V
Ta = 25°C, ITM = 1.2 A,
instantaneous value
Gate trigger voltage VGT — — 0.8 V
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
Gate non-trigger voltage VGD 0.2 — — V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Gate trigger current IGT 1 — 100Note2 µA Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
Holding current IH — 1.5 3 mA
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Thermal resistance Rth (j-a) — — 150 °C/W Junction to ambient
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item A B C D E
IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60
Ω
V
GT
2
1
T
UT
1k
Ω
R
GK
A
3
A2
V1
A1
S
witc
h
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
CR04AM-12
Rev.2.00, Mar.01.2005, page 3 of 7
Performance Curves
10
0
23 5710
1
4
2
23 5710
2
44
6
8
10
3
1
5
7
9
0
501 423
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Ta = 25°C
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
10
2
10
–2
100
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
23 57 23 57
101
23 57
102
23 57 23
10
–1
I
GT
= 100µA
(Tj = 25°C)
V
GD
= 0.2V
2310
0
5710
1
23 5710
2
23 5710
3
10
1
2310
–3
5710
–2
23 5710
–1
23 5710
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
16060–20–40 0 20 40 80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
Typical Example
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0120–40 –20 20 80
0.2
0.5
0.9
06040 100
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
× 100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
V
FGM
= 6V P
GM
= 0.5W
V
GT
= 0.8V
(Tj = 25°C) P
G(AV)
= 0.1W
I
FGM
= 0.3V
Distribution
Typical Example
CR04AM-12
Rev.2.00, Mar.01.2005, page 4 of 7
160
120
60
40
20
140
100
80
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30°
60° 120°
90° 180°
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30°60° 120°
90° 180°
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
160
120
60
40
20
140
100
80
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30° 120°
180° DC
270°60°
90°
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30° 60° 120°
90° 180°
270°
DC
160
120
60
40
20
140
100
80
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30° 60° 120°90° 180°
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Ambient Temperature (°C)Ambient Temperature (°C)Ambient Temperature (°C)
Average On-State Current (A)
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
θ θ
360°
Resistive loads
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
θ
360°
Resistive,
inductive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
Natural convection
θ = 30°
60° 120°
90°
180°
CR04AM-12
Rev.2.00, Mar.01.2005, page 5 of 7
160
120
60
40
20
140
100
80
0160
–40 0 40 80 120140–20 20 60 100
Typical Example
2310
–1
5710
0
23 5710
1
23 5710
2
0
80
100
120
40
60
20
Typical Example
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
R
GK = 1kΩ
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Tj = 125°C
10
0
4.0
0
2.0
2.5
3.0
3.5
1.0
1.5
0.5
2310
0
5710
1
23 5710
2
23 5710
3
160
0
80
100
120
140
40
60
20
Typical Example
2310
–1
5710
0
23 5710
1
23 57 2537 2 537
10
2
500
0
300
400
100
200
60–20–40
–60 0 20 40 80 100120140
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
Distribution
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/µs)
× 100 (%)
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
Holding Current vs.
Gate Trigger Current
Holding Current (mA)
Gate Trigger Current (µA)
R
GK = 1kΩ
IGT(25°C) = 35µA
Typical Example
Tj = 25°C
# 1
Typical Example
IGT(25°C) IH(1kΩ)
25µA0.9mA
# 1
Tj = 25°C
Tj = 125°C
RGK = 1kΩ
10
1
10
2
CR04AM-12
Rev.2.00, Mar.01.2005, page 6 of 7
10
0
2310
–1
5710
0
23 5710
1
23 5710
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
Typical Example
40
30
15
10
5
35
25
20
0160
0 40 80 120 14020 60 100
Distribution
Turn-On Time vs.
Gate Current
Turn-On Time (µs)
Gate Current (mA)
Turn-Off Time vs.
Junction Temperature
Turn-Off Time (µs)
Junction Temperature (°C)
V
D = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
VD = 50V, VR = 50V
IT = 2A, RGK = 1kΩ
160
120
100
40
60
20
0160
–40–20 20 80 140120
80
140
06040 100
10
2
10
0
10
1
10
2
245324537 7
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
Gate Trigger Current vs.
Gate Current Pulse Width
× 100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Junction Temperature (°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Gate Current Pulse Width (µs)
# 1 # 2
Typical Example
I
GT(DC)
10µA
65µA
# 1
# 2
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Tj = 25°C
Typical Example
CR04AM-12
Rev.2.00, Mar.01.2005, page 7 of 7
Package Dimensions
SC-43A 0.23g
MASS[Typ.]
TO-92PRSS0003EA-A
RENESAS CodeJEITA Package Code Package Name
Unit: mm
φ5.0Max
4.4
3.6
11.5Min 5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 500 Type name CR04AM-12
Lead form Vinyl sack 500 Type name – Lead forming code CR04AM-12-A6
Form A8 Taping 2000 Type name – TB CR04AM-12-TB
Note : Please confirm the specification about the shipping in detail.
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