DATA SH EET
Objective specification 2000 Aug 24
DISCRETE SEMICONDUCTORS
KMZ43
Magnetic field sensor
M3D315
2000 Aug 24 2
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
DESCRIPTION
The KMZ43 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges, with a relative angular displacement
of 45°.
A rotating magnetic field in the x-y plane will produce two
independent sinusoidal output signals, one a function of
+cos(2α) and the second a function of +sin(2α), αbeing
the angle between sensor and field direction (see Fig.3).
Unlike the KMZ41(1), which needs a saturation field
strength of 100 kA/m, the KMZ43 is suited to high
precision angle measurement applications under low field
conditions (saturation field strength 25 kA/m).
The sensor can be operated at any frequency between
DC and 1 MHz.
PINNING
(1) The KMZ41 delivers a +sin(2α) and a −cos(2α) signal.
PIN SYMBOL DESCRIPTION
1−VO1 output voltage bridge 1
2−VO2 output voltage bridge 2
3V
CC2 supply voltage bridge 2
4V
CC1 supply voltage bridge 1
5+V
O1 output voltage bridge 1
6+V
O2 output voltage bridge 2
7 GND2 ground 2
8 GND1 ground 1
handbook, halfpage
41
58
MGD790
pin 1
index
x
y
Fig.1 Simplified outline SOT96-1.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VCC1 operating voltage −59V
V
CC2 operating voltage −59V
S sensitivity (a2=0°, a1= 135°) 2.1 2.3 2.5 mV/°
Voffset1 offset voltage per supply voltage −2−+2 mV/V
Voffset1 offset voltage per supply voltage −2−+2 mV/V
Rbridge bridge resistance 3.2 3.7 4.2 kΩ
2000 Aug 24 3
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
CIRCUIT DIAGRAM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MIN. MAX. UNIT
VCC1 operating voltage −9V
V
CC2 operating voltage −9V
P
tot total power dissipation −45 mW
Tstg storage temperature range −65 +150 °C
Tamb operating temperature range −40 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 155 K/W
handbook, halfpage
GND1
8765
1234
MGD789
GND2 +VO2 +VO1
−VO1 −VO2 VCC2 VCC1
Fig.2 Simplified circuit diagram.
2000 Aug 24 4
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
CHARACTERISTICS
Tamb =25°C and Hrotation = 25 kA/m, VCC1 =5V; V
CC2 = 5 V unless otherwise specified.
Notes
1. Sensitivity changes with angle due to sinusoidal output.
2. Vpeak =(Vout max −Voffset).
3. .
4. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, pins 6 and 2.
5. .
6. .
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC bridge supply voltage −59V
S sensitivity open circuit; note 1
a=0° (bridge 2) 2.1 2.3 2.5 mV/°
a = 135° (bridge 1)
Vpeak1 peak voltage note 2; see Fig.3 60 66 72 mV
Vpeak2 peak voltage note 2; see Fig.3 60 66 72 mV
TCVpeak temperature coefficient of
peak voltage Tamb =−40 to +150 °C;
note 3 −0.27 −0.29 −0.31 %/K
Rbridge bridge resistance note 4 3.2 3.7 4.2 kΩ
TCRbridge temperature coefficient of
bridge resistance Tamb =−40 to +150 °C;
note 5 0.29 0.31 0.34 %/K
Voffset offset voltage per supply
voltage see Fig.3 −2 0 +2 mV/V
TCVoffset temperature coefficient of
offset voltage per supply
voltage
Tamb =−40 to +150 °C;
note 6; see Fig.3 −1 0 +1 (µV/V)/K
FH hysteresis of output voltage note 7 −0 0.02 %FS
ωoperating angular velocity 0 −1 MHz °/s
k amplitude synchronism note 8 99.5 100 100.5 %
TCk temperature coefficient of
amplitude synchronism Tamb =−40 to +150 °C;
note 9 −0.002 0 −0.002 %/K
∆α angular inaccuracy note 10 −0 0.1 deg
TCVpeak 100=Vpeak T2
() V
peak T1
()
–
V
peak T1()
T
2T
1
–()
------------------------------------------------------- Where T140°CT
2150°C=;–=
TCRbridge 100=Rbridge T2
() R
bridge T1
()
–
R
bridge T1
()
T
2T
1
–()
--------------------------------------------------------------- Where T140°CT
2150°C=;–=
TCVoffset Voffset T2
()V
offset T1
()
–
T
2T
1
–()
---------------------------------------------------------
=Where T140°CT
2150°C=;–=
2000 Aug 24 5
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
7.
8. .
9. .
10. ∆α =αreal −α
measured without offset voltage influences.
FH1100 VO1 67.5°()135°45°⇒ VO1 67.5°()45°135°⇒
–
2V
peak1
×
--------------------------------------------------------------------------------------------------------
=
FH2100 VO2 22.5°()90°0°⇒ VO2 22.5°()0°90°⇒
–
2V
peak2
×
----------------------------------------------------------------------------------------------
=
kVpeak1
Vpeak2
----------------- 100⋅=
TCk 100 kT2 kT1
–()
k
T1 T2T1
–()
--------------------------------
=Where T140°CT
2150°C=;–=
handbook, full pagewidth
MBL215
−VO1
−VO2
VCC2
VCC1
GND1
direction of
magnetic field
α = 0°
α
GND2
+VO2
+VO1
0
Vout
(mV)
Voffset 1
0
90
−100
−50
50
100
180 360
270 α (deg)
VO2
Vpeak 1
VO1
Vout max 1
0
Fig.3 Output signals related to the direction of the magnetic field.
2000 Aug 24 6
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
PACKAGE OUTLINE
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 5.0
4.8 4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.20
0.19 0.16
0.15 0.050 0.244
0.228 0.028
0.024 0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
97-05-22
99-12-27
2000 Aug 24 7
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat anyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofanyoftheseproducts, conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,and makesnorepresentations orwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Internet: http://www.semiconductors.philips.com
2000 70
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Printed in The Netherlands 613520/01/pp8 Date of release: 2000 Aug 24 Document order number: 9397 750 07231
