© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 25 μA
VGE = 0V TJ = 125°C 5.0 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 100A, VGE = 15V, Note 1 1.35 1.50 V
IC = 200A 1.65 V
TJ = 125°C 1.75 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C, RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C (chip capability) 200 A
ICM TC= 25°C, 1ms 600 A
SSOA VGE = 15V, TVJ = 125°C, RG = 1ΩICM = 300 A
(RBSOA) Clamped inductive load @ VCE ≤ 600V
PCTC= 25°C 1250 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
FCMounting force 30..120/6.7..27 N/lb.
Weight 10 g
DS99929A(05/08)
IXGB200N60B3
G = Gate C = Collector
E = Emitter TAB = Collector
VCES = 600V
IC110 = 200A
VCE(sat) ≤≤
≤≤
≤ 1.5V
tfi(typ) = 183ns
GenX3TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
PLUS264TM (IXGB)
E
G
C(TAB)
Features
zNPT IGBT technology
zLow switching losses
zLow tail current
zNo latch up
zShort circuit capability
zPositive temperature coefficient
for easy paralleling
zMOS input, voltage controlled
zOptional ultra fast diode
zInternational standard package
Advantages
zSpace savings
zHigh power density power supplies
zLow gate charge results in simple
drive requirement
Applications
zHigh Frequency Inverters
zUPS and Welding
zAC and DC Motor Controls
zPower Supplies and Drivers for
Solenoids, Relays and Connectors
zPFC Circuits
zBattery Chargers
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGB200N60B3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC= 60A, VCE = 10V, Note 1 95 160 S
Cies 26 nF
Coes VCE = 25V, VGE = 0V, f = 1MHz 1260 pF
Cres 97 pF
Qg(on) 750 nC
Qge IC= 100A, VGE = 15V, VCE = 0.5 • VCES 115 nC
Qgc 245 nC
td(on) 44 ns
tri 83 ns
Eon 1.6 mJ
td(off) 310 450 ns
tfi 183 300 ns
Eoff 2.9 4.5 mJ
td(on) 42 ns
tri 80 ns
Eon 2.4 mJ
td(off) 430 ns
tfi 300 ns
Eoff 4.2 mJ
RthJC 0.10 °C/W
RthCS 0.13 °C/W
Inductive load, TJ = 25°°
°°
°C
IC = 100A, VGE = 15V
VCE = 300V, RG = 1Ω
Inductive load, TJ = 125°°
°°
°C
IC = 100A, VGE = 15V
VCE = 300V, RG = 1Ω
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ISOPLUS264TM (IXGB) Outline
Note: Bottom heatsink meets
2500Vrms Isolation to the other
Ref: IXYS CO 0128
© 2008 IXYS CORPORATION, All rights reserved
IXGB200N60B3
Fi g . 1. Ou tp u t C h ar acter i sti cs
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
11V
9V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0123456789
V
CE
- Volts
I
C -
Amperes
V
GE
= 15V
11V
9V
5V
6V
7V
Fi g . 3. Outp u t Ch ar ac ter i sti c s
@ 125ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction T em perature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 200A
I
C
= 150A
I
C
= 100A
Fi g . 5. C ol l ect o r-to - Emi tter Vo l tag e
vs. Gate-to -Emitter Vo l tag e
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 200
A
150
A
100
A
T
J
= 25ºC
Fig. 6. Input Adm ittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GE
- Volts
I
C -
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGB200N60B3
Fi g . 11. Maximum Tr an sien t Th er mal I mped an ce
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. T ransconductance
0
25
50
75
100
125
150
175
200
225
250
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 1Ω
dV / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 100A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2008 IXYS CORPORATION, All rights reserved
IXGB200N60B3
Fig. 12. Inductive Switching
Ener g y L o ss vs . Ga te R esi stan c e
1.5
2.0
2.5
3.0
3.5
4.0
4.5
12345678910
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 17. Inductive Turn-off
Switching T imes vs. Junction Temperature
120
140
160
180
200
220
240
260
280
300
320
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
280
300
320
340
360
380
400
420
440
460
480
500
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GE
= 15V
V
CE
= 300V
I
C
= 50A, 100A
Fig. 15. Inductive T urn-off
Swit ch i n g Times vs. Gat e Re si stan ce
230
240
250
260
270
280
290
300
310
320
330
12345678910
R
G
- Ohms
t
f
- Nanoseconds
300
400
500
600
700
800
900
1000
1100
1200
1300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching
Ener g y L o ss vs . C o l l ect o r Cu r r e n t
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω ,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction T emperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1Ω
,
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 16. Inductive Turn-off
Switchi n g Times vs. C o l l ecto r C u rren t
120
140
160
180
200
220
240
260
280
300
320
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f
- Nanoseconds
300
320
340
360
380
400
420
440
460
480
500
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGB200N60B3
IXYS REF: G_200N60B3(97)3-28-08-A
Fig. 19. Inductive T urn-on
Switching T imes vs. Collector Current
30
40
50
60
70
80
90
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
t
r
- Nanoseconds
36
38
40
42
44
46
48
t
d(on)
- Nanoseconds
t
r
td(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 300V
T
J
= 25ºC, 125ºC
Fig. 20. Inductive Turn-on
Switch i n g Ti mes vs. Ju n cti o n Temp er atu r e
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
36
38
40
42
44
46
48
t
d(on)
- Nanoseconds
t
r
td(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 300V
I
C
= 50A
I
C
= 100A
Fig. 18. Inductive Turn-on
Switch in g Times vs. Gate Resi stance
30
50
70
90
110
130
150
12345678910
RG - Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
t
d(on)
- Nanoseconds
t
r
td(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
