November 2010 Preliminary Datasheet
http://www.genesicsemi.com Page 1 of 4
GB07SHT12-247
Silicon Carbide Power = 1200 V
Schottky Diode = 7 A
= 23 nC
Features Package
TO – 247AC (Enhanced Plastic Package)
Advantages Applications
Parameter Symbol Conditions Values Unit
Repetitive peak reverse voltage 1200 V
Continuous forward current 7A
RMS forward current 12 A
40 A
Non-repetitive peak forward current 140 A
7
Power dissipation 210 W
Operating and storage temperature -55 to 225 °C
Parameter Symbol Conditions Values Unit
min. typ. max.
Diode forward voltage 1.65 1.8 V
3.70
Reverse current 8 180 μA
30 1000
Total capacitive charge 23 nC
Switching time < 15 ns
Total capacitance C 210 pF
38
Thermal Characteristics
Thermal resistance, junction - case 1.01 °C/W
Mechanical Properties
Mounting torque M 0.6 Nm
VRRM
IF
QC
•1200 V Schottky rectifier •RoHS Compliant
•225 °C maximum operating temperature
•Zero reverse recovery charge
•Positive temperature coefficient of VF
• Temperature independent switching behavior
• Lowest figure of merit QC/IF
• Available screened to Mil-PRF-19500
• High temperature operation •Down Hole Oil Drilling, Geothermal Instrumentation
•Improved circuit efficiency (Lower overall cost) •High Temperature DC/DC Converters
•Low switching losses •High Temperature Motor and Servo Drives
•Ease of paralleling devices without thermal runaway •High Temperature Inverters
•Smaller heat sink requirements •High Temperature Actuator Control
•Industry's lowest reverse recovery charge •Military Power Supplies
•Industry's lowest device capacitance • Ideal for Aerospace and Defense Applications
•Ideal for output switching of power supplies
•Best in class reverse leakage current at operating temperature
Maximum Ratings, at T j= 225 °C, unless otherwise specified
VRRM
IFTC 200 °C
IF(RMS) TC 200 °C
Surge non-repetitive forward current, Half Sine
Wave IF,SM TC = 25 °C, tp = 10 ms
IF,max TC = 25 °C, tp = 10 μs
i2t value i2 dt TC = 25 °C, tp = 10 ms A2s
Ptot TC = 25 °C
Tj, Tstg
Electrical Characteristics, at Tj = 225 °C, unless otherwise specified
VF
IF = 7 A, Tj = 25 °C
IF = 7 A, Tj = 225 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 225 °C
QC VR = 950 V, IF IF,max
ts dIF/dt = 330 A/ȝs, Tj = 150 °C
VR = 3 V, f = 1 kHz, Tj = 25 °C
VR = 200 V, f = 1 kHz, Tj = 25 °C
RthJC
1. Considering worst case Zth conditions
http://www.genesicsemi.com/index.php/silicon-carbide-products/schottky-rectifiers/discrete-rectifiers
PIN 1
PIN 2
CASE
Case
1
2
November 2010 Preliminary Datasheet
http://www.genesicsemi.com Page 2 of 4
GB07SHT12-247
Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics
Figure 3: Typical Power Derating Curve
Figure 5: Typical Junction Capacitance versus Reverse Voltage Figure 6: Typical Switching Energy versus Reverse Voltage
Characteristics Characteristics
Figure 4: Typical Current Derating Curves (D = tP/T,
t
P = 400 μs1)
November 2010 Preliminary Dat ash eet
http://www.genesicsemi.com Page 3 of 4
GB07SHT12-247
Figure 8: Typical Transient Thermal Impedance
Package Dimensions:
TO-247AC PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSI ON IS INCH. DIMENSION IN BRACKET IS MILLIMET ER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Figure 7: Typical Current versus Pulse Duration Curves at TC= 200 OC
November 2010 Preliminary Dat ash eet
http://www.genesicsemi.com Page 4 of 4
GB07SHT12-247
Revision History
Date Revision Comments Supersedes
2010/11/12 1 Second generation release GA07SHT12-247
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury
and/or property d amage.
