DATA SHEET THYRISTORS 5P4SMA,5P6SMA 5 A MOLD ISOLATED SCR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 5P4SMA and 5P6SMA are P gate all diffused mold type 4.7 MAX. 10.5 MAX. thyristor granted 5 A on-state average current (TC = 94C), with 7 0.2 3.2 0.2 3.0 MAX. * 80 A surge current 2.8 0.2 * Mold isolated plastic package 1 * High voltage: VDRM, VRRM = 400 V (5P4SMA) 2 3 5 0.2 VDRM, VRRM = 600 V (5P6SMA) APPLICATIONS * Motor speed control for household appliance * Temperature control for heater and constant temperature box * Constant voltage power source and battery charger * 13.5 MIN. 17 0.2 FEATURES 12 0.2 5 0.1 rated voltages up to 600 V. 0.8 0.1 1.3 0.2 1.5 0.2 2.54 TYP. 2.54 TYP. * Automotive application such as regulator 0.5 0.1 2.5 0.1 1: Cathode 2: Anode 3: Gate * Various solid state relay, etc. *: TC test bench-mark Standard weight: 2 g The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17163EJ3V0DS00 (3rd edition) (Previous No. SC-2101) Date Published June 2004 NS CP(K) Printed in Japan The mark shows major revised points. 1988 5P4SMA,5P6SMA MAXIMUM RATINGS Parameter Symbol 5P4SMA 5P6SMA Unit Remarks Non-repetitive Peak Reverse Voltage VRSM 500 700 V - Non-repetitive Peak Off-state Voltage VDSM 500 700 V - Repetitive Peak Reverse Voltage VRRM 400 600 V - Repetitive Peak Off-state Voltage VDRM 400 600 V - Average On-state Current IT(AV) 5 (TC = 94C, single phase half wave, = 180) A Refer to Figure 11. Effective On-state Current IT(RMS) 8 A ITSM 80 (50 Hz, sine half wave, 1 cycle) A Surge On-state Current Refer to Figure 2. 88 (60 Hz, sine half wave, 1 cycle) Fusing Current 2 iT dt 28 (1 ms t 10 ms) As 2 - Critical Rate Rise of On-state Current dIT/dt 50 A/s - PGM 5 (f 50 Hz, Duty 10%) W Refer to Figure 3. PG(AV) 0.5 W Peak Gate Forward Current IFGM 2 (f 50 Hz, Duty 10%) A - Peak Gate Reverse Voltage VRGM 10 V - Tj -40+125 C - Tstg -55+150 C - Peak Gate Power Dissipation Average Gate Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tj = 25C) Parameter Repetitive Peak Reverse Current Symbol IRRM Conditions VRM = VRRM MIN. TYP. MAX. Unit Remarks Tj = 25C - - 100 A - Tj = 125C - - 2 mA - Tj = 25C - - 100 A - Repetitive Peak Off-state Current IDRM VDM = VDRM - - 2 mA - On-state Voltage VTM ITM = 10 A - - 1.4 V Refer to Figure 1. Refer to Figure 4. Tj = 125C Gate Trigger Current IGT VDM = 6 V, RL = 100 - - 10 mA Gate Trigger Voltage VGT VDM = 6 V, RL = 100 - - 1.5 V 0.2 - - V - - 6 - mA - - 40 - V/s - - 50 - s - Gate Non-trigger Voltage VGD IH Holding Current Critical Rate Rise of Off-state Voltage Circuit Commuted Turn-off Time dv/dt tq Tj = 125C, VDM = 1 VDRM 2 VDM = 24 V, ITM = 10 A Tj = 125C, VDM 2 = 3 VDRM Tj = 125C, ITM = 5 A, diR/dt = 15 A/s, VR 25 V, VDM = Thermal Resistance 2 Note 2 3 VDRM, dVD/dt = 10 V/s Rth(j-c) Junction to case DC - - 4.2 C/W Refer to Figure 13. Rth(j-a) Junction to ambient DC - - 60 C/W Data Sheet D17163EJ3V0DS 5P4SMA,5P6SMA TYPICAL CHARACTERISTICS Figure 1. iT vs. T CHARACTERISTIC Figure 2. ITSM RATING 100 MAX. ITSM - Surge On-state Current - A iT - On-state Current - A 50 Initial Tj = 125C 140 Tj = 25C 125C 10 5.0 ITSM 10 ms 20 ms 120 100 80 60 Hz 50 Hz 60 40 20 0 1.0 0 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.4 4.0 5 10 T - On-state Voltage - V Figure 3. VFG vs. IFG RATING Figure 4. VGT vs. IGT CHARACTERISTIC 5 Tj = -40 to +125C 8 6 VDM = 6 V RL = 100 VGT - Gate Trigger Voltage - V VFG - Gate Forward Voltage - V 100 Cycles 10 PGM = 5 W f = 50 Hz Duty10% 4 PG(AV) = 0.5 W 2 4 3 Tj = -40C 2 0C 25C 1 0 0 0 1.0 0 2.0 5 IFG - Gate Forward Current - A Figure 5. IGT vs. TA CHARACTERISTIC 15 20 25 30 Figure 6. VGT vs. TA CHARACTERISTIC 1.0 VGT - Gate Trigger Voltage - V 10 1 0.1 -40 10 IGT - Gate Trigger Current - mA 100 IGT - Gate Trigger Current - mA 50 -20 0 20 40 60 80 0.8 0.6 0.4 0.2 100 TA - Ambient Temperature - C 0 -40 -20 0 20 40 60 80 100 TA - Ambient Temperature - C Data Sheet D17163EJ3V0DS 3 5P4SMA,5P6SMA Figure 7. iGT vs. CHARACTERISTIC Figure 8. GT vs.- CHARACTERISTIC 1000 1.0 TA = 25C GT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA TA = 25C 100 10 1 0.8 0.6 0.4 0.2 0.1 1 10 100 0 1000 1 10 - Pulse Width - s Figure 10. PT(AV) vs. IT(AV) CHARACTERISTIC PT(AV) - On-state Average Power Dissipation - W Figure 9. IH vs. TA CHARACTERISTIC IH - Holding Current - mA 10 -20 0 20 40 60 80 100 TA - Ambient Temperature - C 20 18 16 180 14 12 DC 10 = 180 90 8 60 6 30 4 120 2 0 0 2 4 6 8 10 12 IT(AV) - Average On-state Current - A Figure 12. TA vs. IT(AV) RATING 140 140 0 120 180 100 80 60 = 180 30 40 20 DC 0 120 Conduction angle TA - Ambient Temperature - C TC - Case Temperature - C 0 Conduction angle Figure 11. TC vs. IT(AV) RATING 80 60 40 60 90 120 DC 20 60 90 120 = 180 30 0 0 2 4 6 8 10 12 IT(AV) - Average On-state Current - A 0 1.0 2.0 IT(AV) - Average On-state Current - A Data Sheet D17163EJ3V0DS 180 Conduction angle 100 0 4 1000 - Pulse Width - s 20 0 -40 100 5P4SMA,5P6SMA Zth - Transient Thermal Impedance - C/W Figure 13. Zth CHARACTERISTIC 100 Junction to ambient 10 Junction to case 1 0.1 0.01 0.1 1 10 100 1000 10000 t - Time - s Data Sheet D17163EJ3V0DS 5 5P4SMA,5P6SMA * The information in this document is current as of June, 2004. The information is subject to change without notice. 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