IRF450
Prelim. 10/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
39.95 (1.573)
max.
17.15 (0.675)
16.64 (0.655)
30.40 (1.197)
30.15 (1.187)
26.67 (1.050)
max.
11.18 (0.440)
10.67 (0.420)
1
2
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
20.32 (0.800)
18.80 (0.740)
dia.
7.87 (0.310)
6.99 (0.275)
12.07 (0.475)
11.30 (0.445)
1.78 (0.070)
1.52 (0.060)
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
VGS Gate – Source Voltage
IDContinuous Drain Current (VGS = 0 , Tcase = 25°C)
IDContinuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current 2
dv/dt Peak Diode Recovery 3
TJ, Tstg Operating and Storage Temperature Range
TLLead Temperature 1.6mm (0.63”) from case for 10 sec.
±20V
12A
7.75A
48A
150W
1.2W/°C
8.0mJ
12A
3.5V/ns
-55 to +150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches) N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
TO–3 Metal Package
Pin 1 – Gate Pin 2 – Source Case – Drain
Notes
1) Pulse Test: Pulse Width
£
300
m
s,
d£
2%
2) @ VDD = 25V , L
³
480
m
H , RG= 25
W
, Peak IL= 28A , Starting TJ= 25°C
3) @ ISD
£
28A , di/dt
£
170A/
m
s , VDD
£
BVDSS , TJ
£
150°C , Suggested RG= 9.1
W
VDSS 500V
ID(cont) 13A
RDS(on) 0.4
WW
WW
IRF450
Prelim. 10/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
500
0.78
0.4
0.5
2 4
5.5 25
250
100
–100
2700
600
240
55 120
5 19
27 70
35
190
170
130
12
48
1.7
1600
14
Negligible
5.0
13
1.0
0.12 30
VGS = 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS = 10V ID= 7.75A
VGS = 10V ID= 12A
VDS = VGS ID= 250mA
VDS
³
15V IDS = 7.75A
VGS = 0 VDS = 0.8BVDSS
TJ= 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID= 12A
VDS = 0.5BVDSS
VDD = 250V
ID= 12A
RG= 2.35
W
IS= 12A TJ= 25°C
VGS = 0
IF= 12A TJ= 25°C
di/ dt
£
100A/
m
s VDD
£
50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge 1
Forward Turn–On Time
V
V/°C
W
V
S (
É
)
m
A
nA
pF
nC
ns
A
V
ns
m
C
nH
°C/W
BVDSS
D
BVDSS
D
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
R
q
JC
R
q
CS
R
q
JA
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
