BCX56 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A Total Device Dissipation TA=25C PD 500 mW Junction Temperature Range TJ +150 C Storage Temperature Range Tstg -55 to +150 C Device Marking BCX56=BH , BCX56-10=BK , BCX56-16=BL OFF CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage, IC = 100A, I E = 0 V(BR)CBO - 100 V Collector-Emitter Breakdown Voltage, IC = 10mA, I B = 0 V(BR)CEO - 80 V Emitter-Base Breakdown Voltage, IE = 10A, IC = 0 V(BR)EBO - 5.0 V Collector Cut-off Current, VCB = 30V, I E = 0 ICBO - 0.1 A Emitter Cut-off Current, VEB = 5.0V, I C = 0 IEBO - 0.1 A W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 15-Feb-06 BCX56 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min Typ Max hFE1 63 63 100 - 250 160 250 VCE = 2.0V, IC = 5.0mA hFE2 40 - - VCE = 2.0V, IC = 500mA hFE3 25 - - Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA VCE(sat) - - 0.5 V Base-Emitter Voltage VCE = 2.0V, IC = 500mA VBE(ON) - - 1.0 V fT 130 - - MHz Characteristics Unit ON CHARACTERISTICS DC Current Gain VCE = 2.0V, IC = 150mA BCX56 BCX56-10 BCX56-16 TransitionFrequence VCE = 5V, IC = 1mA, f = 100MHz WEITRON http://www.weitron.com.tw 2/3 - 15-Feb-06 BCX56 SOT-89 Outline Dimensions E G H B K Dim A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 15-Feb-06