+150
NPN Plastic-Encapsulate Transistor
BCX56=BH , BCX56-10=BK , BCX56-16=BL
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
TJ
PDmW
˚C
500
BCX56
˚C
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
1/3 15-Feb-06
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Rating
Characteristics
Symbol
Symbol
Value
Min Max
Unit
Unit
A
V
V
V
IC
VEBO
VCBO
VCEO
1.0
5.0
100
80
µA
µA
V
V
V
IEBO
Emitter Cut-off Current, VEB = 5.0V, IC = 0
0.1-
ICBO
Collector Cut-off Current, VCB = 30V, IE = 0
0.1-
V(BR)EBO
Emitter-Base Breakdown Voltage, IE = 10µA, IC = 0
5.0-
V(BR)CEO
Collector-Emitter Breakdown Voltage, IC = 10mA, IB = 0
80-
V(BR)CBO
Collector-Base Breakdown Voltage, IC = 100µA, IE = 0
100-
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Storage Temperature Range
Junction Temperature Range
Tstg -55 to +150
Total Device Dissipation TA=25°C
Lead(Pb)-Free
P b
BCX56
WEITRON
http://www.weitron.com.tw
TransitionFrequence
-
-
-
-
- -
-
250
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
63
- 16063
-
- 250100
- -40
- -25
0.5
VBE(ON) V1.0
130 MHz
VCE(sat)
fT
Base-Emitter Voltage
VCE = 2.0V, IC = 500mA
hFE1
hFE2
hFE3
DC Current Gain
VCE = 2.0V, IC = 150mA BCX56
BCX56-10
BCX56-16
Collector-Emitter Saturation Voltage
2/3 15-Feb-06
Characteristics Symbol Min Typ Max Unit
VCE = 2.0V, IC = 5.0mA
VCE = 2.0V, IC = 500mA
VCE = 5V, IC = 1mA, f = 100MHz
IC = 500mA, IB = 50mA
WEITRON
BCX56
http://www.weitron.com.tw
Dim
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
SOT-89
SOT-89 Outline Dimensions unit:mm
B
A
H
E
J
K
G
D
C
L
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.500TYP
3/3 15-Feb-06
