SFH 235 FA
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
Silicon PIN Photodiode with Daylight Filter
2000-01-01 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen bei 880 nm
• Kurze Schaltzeit (typ. 20 ns)
• 5 mm-Plastikbauform im LED-Gehäuse
• Auch gegurtet lieferbar
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern und Gerätefernsteuerungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type Bestellnummer
Ordering Code
SFH 235 FA Q62702-P273
Features
• Especially suitable for applications of 880 nm
• Short switching time (typ. 20 ns)
• 5 mm LED plastic package
• Also available on tape and reel
Applications
• IR-remote control of hi-fi and TV sets, video
tape recorders, dimmers, remote control of
various equipment
• Photointerrupters
2000-01-01 2
SFH 235 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 80 °C
Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt
bei Lötzeit t ≤ 3 s)
Soldering temperature in 2 mm distance from case
bottom (t ≤ 3 s)
TS230 °C
Sperrspannung
Reverse voltage VR32 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Ee = 1 mW/cm2
IP50 (≥ 40) µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ740 …1120 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A7mm
2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L×B
L×W2.65 ×2.65 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.6 …0.8 mm
Halbwinkel
Half angle ϕ±65 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
SFH 235 FA
2000-01-01 3
Spektrale Fotoempfindlichke it
Spectral sensitivity Sλ0.63 A/W
Quantenausbeute
Quantum yield η0.9 Electrons
Photon
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO320 (≥ 250) mV
Kurzschlußstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 22 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.03 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 4.0 ×10– 14
Nachweisgrenze, VR = 10 V
Detection limit D* 6.6 ×1012
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
SFH 235 FA
2000-01-01 4
Relati ve Sp ectral Sensi ti vi ty
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Chara cter i sti cs
Srel = f (ϕ)
λ
OHF01430
400
rel
S
0600 800 1000 nm 1200
10
20
30
40
50
60
70
80
%
100
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
Photocurre nt IP = f (Ee), VR = 5 V
Open-Ci r cu it V oltage
VO = f (Ee)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01428
e
0
10
P
Ι
-1
10 10 110 210 4
10 0
10 1
10 2
10 34
10
3
10
2
10
1
10
10 0
VO
µ
AmV
Ι
P
VO
2
W/cm
µ
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipat i on
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00398
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10 0
10 1
10 2
10 3
nA
20 40 60 80 ˚C 100
SFH 235 FA
2000-01-01 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follow s: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of component and shall not be c ons idered as assured charac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components use d in life-support de vices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is reasonable to as su m e th at the health of the user may be endange red.
3.8 (0.150)
7.2 (0.283)
6.6 (0.260)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
1.1 (0.043)
0.7 (0.028)
0.6 (0.024)
0.4 (0.016) 0.75 (0.030)
0.45 (0.018)
35.5 (1.398)
33.5 (1.319)
0.5 (0.020)
0.3 (0.012)
3.1 (0.122)
2.6 (0.102)
5.1 (0.201)
4.6 (0.181)
Photosensitive
area GEOY6422
Cathode
Surface
not flat
