KA5H0380RTU_NL - Fairchild Semiconductor

www.fairchildsemi.com

Rev.1.0.6

Features

• Precision Fixed Operating Frequency (100/67/50kHz)

• Low Start-up Current(Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Current Protection

• Over Voltage Protection (Min. 25V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Applications

• SMPS for VCR, SVR, STB, DVD & DVCD

• SMPS for Printer, Facsimile & Scanner

• Adaptor for Camcorder

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consists of a

high voltage power SenseFET and a current mode PWM IC.

Included PWM controller integrates the fixed frequency

oscillator, the under voltage lock-out, the leading edge

blanking, the optimized gate turn-on/turn-off driver, the

thermal shutdown protection, the over voltage protection,

and the temperature compensated precision current sources

for the loop compensation and the fault protection circuitry.

Compared to a discrete MOSFET and a PWM controller or

an RCCsolution, a Fairchild Power Switch(FPS) can reduce

the total component count, design size and weight and at the

same time increase efficiency, productivity, and system

reliability. It has a basic platform well suited for the cost

effective design in either a flyback converter or a forward

converter

Internal Block Diagram

#3 VCC

32V

2.5R

1mA

0.1V

−

OVER VOLTAGE S/D

−

7.5V

27V

Thermal S/D

Power on reset

−

L.E.B

OSC

Vref

Internal

bias

Good

logic

SFET

#2 DRAIN

#1 GND

#4 FB

KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R

KA5H0380R, KA5M0380R, KA5L0380R

Fairchild Power Switch(FPS)

TO-220F-4L

1. GND 2. Drain 3. VCC 4. FB

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

Characteristic Symbol Value Unit

KA5H0365R, KA5M0365R, KA5L0365R

Drain-Gate Voltage (RGS=1MΩ)V

DGR 650 V

Gate-Source (GND) Voltage VGS ±30 V

Drain Current Pulsed (1) IDM 12.0 ADC

Continuous Drain Current (TC=25°C) ID3.0 ADC

Continuous Drain Current (TC=100°C) ID2.4 ADC

Single Pulsed Avalanche Energy (2) EAS 358 mJ

Maximum Supply Voltage VCC,MAX 30 V

Analog Input Voltage Range VFB -0.3 to VSD V

Total Power Dissipation PD75 W

Derating 0.6 W/°C

Operating Junction Temperature. TJ+160 °C

Operating Ambient Temperature. TA-25 to +85 °C

Storage Temperature Range. TSTG -55 to +150 °C

KA5H0380R, KA5M0380R, KA5L0380R

Drain-Gate Voltage (RGS=1MΩ)V

DGR 800 V

Gate-Source (GND) Voltage VGS ±30 V

Drain Current Pulsed (1) IDM 12.0 ADC

Continuous Drain Current (TC=25°C) ID3.0 ADC

Continuous Drain Current (TC=100°C) ID2.1 ADC

Single Pulsed Avalanche Energy (2) EAS 95 mJ

Maximum Supply Voltage VCC,MAX 30 V

Analog Input Voltage Range VFB -0.3 to VSD V

Total Power Dissipation PD75 W

Derating 0.6 W/°C

Operating Junction Temperature. TJ+160 °C

Operating Ambient Temperature. TA-25 to +85 °C

Storage Temperature Range. TSTG -55 to +150 °C

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

KA5H0365R, KA5M0365R, KA5L0365R

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V

Zero Gate Voltage Drain Current IDSS

VDS=Max. Rating, VGS=0V - - 50 µA

VDS=0.8Max. Rating,

VGS=0V, TC=125°C- - 200 µA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω

Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - S

Input Capacitance Ciss

VGS=0V, VDS=25V,

f=1MHz

- 720 -

pFOutput Capacitance Coss - 40 -

Reverse Transfer Capacitance Crss - 40 -

Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A

(MOSFET switching

time is essentially

independent of

operating temperature)

- 150 -

Rise Time tr - 100 -

Turn Off Delay Time td(off) - 150 -

Fall Time tf - 42 -

Total Gate Charge

(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,

VDS=0.5BVDSS (MOSFET

switching time is essentially

independent of

operating temperature)

--34

Gate-Source Charge Qgs - 7.3 -

Gate-Drain (Miller) Charge Qgd - 13.3 -

KA5H0380R, KA5M0380R, KA5L0380R

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 800 - - V

Zero Gate Voltage Drain Current IDSS

VDS=Max. Rating, VGS=0V - - 250 µA

VDS=0.8Max. Rating,

VGS=0V, TC=125°C- - 1000 µA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω

Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S

Input Capacitance Ciss

VGS=0V, VDS=25V,

f=1MHz

- 779 -

pFOutput Capacitance Coss - 75.6 -

Reverse Transfer Capacitance Crss - 24.9 -

Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A

(MOSFET switching

time is essentially

independent of

operating temperature)

-40-

Rise Time tr - 95 -

Turn Off Delay Time td(off) - 150 -

Fall Time tf - 60 -

Total Gate Charge

(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,

VDS=0.5BVDSS (MOSFET

switching time is

essentially independent of

operating temperature)

--34

Gate-Source Charge Qgs - 7.2 -

Gate-Drain (Miller) Charge Qgd - 12.1 -

----=

KA5X03XX-SERIES

Electrical Characteristics (Control Part) (Continued)

(Ta = 25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTION

Start Threshold Voltage VSTART VFB=GND 14 15 16 V

Stop Threshold Voltage VSTOP VFB=GND 8.499.6 V

OSCILLATOR SECTION

Initial Accuracy FOSC KA5H0365R

KA5H0380R 90 100 110 kHz

Initial Accuracy FOSC KA5M0365R

KA5M0380R 61 67 73 kHz

Initial Accuracy FOSC KA5L0365R

KA5L0380R 45 50 55 kHz

Frequency Change With Temperature (2) --25°C≤Ta≤+85°C-±5±10 %

Maximum Duty Cycle Dmax KA5H0365R

KA5H0380R 62 67 72 %

Maximum Duty Cycle Dmax

KA5M0365R

KA5M0380R

KA5L0365R

KA5L0380R

72 77 82 %

FEEDBACK SECTION

Feedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA

Shutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 V

Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD 456µA

REFERENCE SECTION

Output Voltage (1) Vref Ta=25°C 4.805.005.20 V

Temperature Stability (1)(2) Vref/∆T-25°C≤Ta≤+85°C-0.30.6mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 A

PROTECTION SECTION

Over Voltage Protection VOVP VCC>24V 25 27 29 V

Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C

TOTAL STANDBY CURRENT SECTION

Start-up Current ISTART VCC=14V - 100 170 µA

Operating Supply Current

(Control Part Only) IOP VCC<28 - 7 12 mA

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

110

0.1

@Notes:

1. 300 µs Pulse Test

2. TC = 25 oC

Top : 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom:4.5V

, Drain Current [A]

DS, Drain-Source Voltage [V]

246810

0.1

@Notes:

1. VDS = 30V

2. 300 µs Pulse Test

-25

25 oC

150 oC

, Drain Current [A]

GS, Gate-Source Voltage [V]

012345

@ Note : Tj=25℃

Vgs=10V

Vgs=20V

RDS(on) , [Ω]

Drain-Source On-Resistance

,Drain Current [A] 0.4 0.6 0.8 1. 0 1.2

0.01

0.1

@Notes :

1. VGS = 0 V

2. 300

µs Pulse Test

25 oC150 oC

IDR, Reverse Drain Current [A]

SD, Source-Drain Voltage [V]

100101

100

200

300

400

500

600

700

Crss

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Capacitance [pF]

DS, Drain-Source Voltage [V]

0 5 10 15 20 25

DS=520V

DS=320V

DS=130V

@ Note : ID=3.0A

GS,Gate-Source Voltage[V]

,Total Gate Charge [nC]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0365R, KA5M0365R, KA5L0365R)

-50 0 50 100 150

0.8

0.9

1.0

1.1

1.2

@ No t es :

1. VGS = 0V

2. ID = 250µA

TJ, Junction Temperature [o

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

-50 0 50 100 150

0.0

0.5

1.0

1.5

2.0

2.5

@ Not es :

1. VGS = 10V

2. ID = 1.5 A

TJ, Junction Temperature [oC]

RDS(on), (Normalized)

Drain-Source On-Resistance

100101102103

10-2

10-1

100

101

102

10 µs

100 µs

1 ms

10 ms

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area

is Limited by R DS(on)

, Drain Current [A]

DS , Drain-Source Voltage [V]

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

, Drain Current [A]

, Case Temperature [o

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZθJC(t)=1.25 oC/W Max.

2. Duty Factor, D=t1/t2

3. TJM-TC=PDM*ZθJC(t)

θJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

100101

10-1

100

101

@N ot e s :

1. 300µs Pulse Test

2. TC = 25 oC

Top : 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom:4.5V

, Drain Current [A]

DS, Drain-Source Voltage [V]

246810

10-1

100

101

@ N ot es :

1. VDS = 30 V

2. 300 µs Pulse Test

-25 oC25 oC

150 oC

, Drain Current [A]

GS, Gate-Source Voltage [V]

0.4 0.6 0.8 1.0

0.1

@ No t es :

1. VGS = 0V

2. 300 µs Pulse Test

25 oC

150 oC

IDR, Reverse Drain Current [A]

SD, Source-Drain Voltage [V]

100101

100

200

300

400

500

600

700

800

900

1000

Crss

Coss

Ciss

Ciss = Cgs + Cgd (Cds = short ed)

Coss = Cds + Cgd

Crss = Cgd

Capacitance [pF]

DS, Drain-Source Voltage [V]

0 5 10 15 20 25 30

@ Note : ID=3.0A

DS=640V

DS=400V

DS=160V

GS,Gate-Source Voltage[V]

,Total Gate Charge [nC]

01234

Vgs= 10V

Vgs= 20V

@ Note : Tj=25℃

Fig3. On-Resistance vs. Drain Current

RDS(on) , [Ω]

Drain-Source On-Resistance

,Drain Current

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZθJC(t)=1.25 oC/W Max.

2. Duty Factor, D=t1/t2

3. TJM-TC=PDM*ZθJC(t)

θJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]

- 50 0 50 100 150

0.8

0.9

1.0

1.1

1.2

@ No t e s :

1. VGS = 0V

2. ID = 250µA

TJ, Junction Temperature [oC]

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

- 50 0 50 100 150

0.0

0.5

1.0

1.5

2.0

2.5

RDS(on), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

@ No t es:

1. VGS = 10V

2. ID

= 1.5 A

101102103

10-2

10-1

100

101

102

100 µs

10 µs

1 ms

10 ms

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area

is Limited by R DS(on)

, Drain Current [A]

VDS , Drain-Source Voltage [V]

40 60 80 100 120 140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

, Drain Current [A]

, Case Temperature [o

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Control Part) (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Frequency

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Fos c

Fig.2 Feedback Source Current

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Current

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.8

0.85

0.9

0.95

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Start Threshold Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vs ta rt

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Threshold Voltage

Iover

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vs to p

Fig.8 Maximum Duty Cycle

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Fig.10 Shutdown Feedback Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vs d

Fig.11 Shutdown Delay Current

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Protection

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

Fig.13 Soft Start Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vs s

Fig.14 Drain Source Turn-on

Resistance

0.5

1.5

2.5

-25 0 25 50 75 100 125 150

Rdson

()

KA5X03XX-SERIES

Package Dimensions

TO-220F-4L

KA5X03XX-SERIES

Package Dimensions (Continued)

TO-220F-4L(Forming)

KA5X03XX-SERIES

12/9/03 0.0m 001

Stock#DSxxxxxxxx

 2003 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with

instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER

DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU :Non Forming Type

YDTU : Forming type

Product Number Package Marking Code BVDSS FOSC RDS(on)

KA5H0365RTU TO-220F-4L 5H0365R 650V 100kHz 3.6Ω

KA5H0365RYDTU TO-220F-4L(Forming)

KA5M0365RTU TO-220F-4L 5M0365R 650V 67kHz 3.6Ω

KA5M0365RYDTU TO-220F-4L(Forming)

KA5L0365RTU TO-220F-4L 5L0365R 650V 50kHz 3.6Ω

KA5L0365RYDTU TO-220F-4L(Forming)

Product Number Package Marking Code BVDSS FOSC RDS(on)

KA5H0380RTU TO-220F-4L 5H0380R 800V 100kHz 4.6Ω

KA5H0380RYDTU TO-220F-4L(Forming)

KA5M0380RTU TO-220F-4L 5M0380R 800V 67kHz 4.6Ω

KA5M0380RYDTU TO-220F-4L(Forming)

KA5L0380RTU TO-220F-4L 5L0380R 800V 50kHz 4.6Ω

KA5L0380RYDTU TO-220F-4L(Forming)