MMBT3906 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.035 (0.9) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 Pin Configuration 1 = Base 2 = Emitter 3 = Collector .045 (1.15) .037 (0.95) 1 0.031 (0.8) 0.037 (0.95) 0.037 (0.95) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features Mechanical Data * PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. * As complementary type, the NPN transistor MMBT3904 is recommended. * This transistor is also available in the TO-92 case with the type designation 2N3906. Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2A Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Base Voltage -VCBO 40 V Collector-Emitter Voltage -VCEO 40 V Emitter-Base Voltage -VEBO 5.0 V -IC 200 mA Collector Current (1) Power Dissipation at TA = 25C Ptot 225 300(2) mW Thermal Resistance Junction to Ambient Air RJA 450(1) C/W RSB (1) C/W Thermal Resistance Junction to Substrate Backside 320 Junction Temperature Tj 150 C Storage Temperature Range TS -55 to +150 C Notes: (1) Device on fiberglass substrate, see layout. (2) Device on alumina substrate. Document Number 88225 10-May-02 www.vishay.com 1 MMBT3906 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit hFE -VCE = 1V, -IC = 0.1mA -VCE = 1V, -IC = 1mA -VCE = 1V, -IC = 10mA -VCE = 1V, -IC = 50mA -VCE = 1V, -IC = 100mA 60 80 100 60 30 -- -- -- -- -- -- -- 300 -- -- -- Collector-Base Breakdown Voltage -V(BR)CBO -IC = 10A, IE = 0 40 -- -- V Collector-Emitter Breakdown Voltage -V(BR)CEO -IC = 1mA, IB = 0 40 -- -- V Emitter-Base Breakdown Voltage -V(BR)EBO -IE = 10A, IC = 0 5 -- -- V Collector Saturation Voltage -VCEsat -IC = 10mA, -IB = 1mA -IC = 50mA, -IB = 5mA -- -- -- -- 0.25 0.4 V Base Saturation Voltage -VBEsat -IC = 10mA, -IB = 1mA -IC = 50mA, -IB = 5mA -- -- -- -- 0.85 0.95 V Collector-Emitter Cut-off Current -ICEV -VEB = 3V, -VCE = 30V -- -- 50 nA Emitter-Base Cut-off Current -IEBV -VEB = 3V, VCE = 30V -- -- 50 nA fT -VCE = 20V, -IC = 10mA f = 100MHz 250 -- -- MHz Collector-Base Capacitance CCBO -VCB = 5V, f = 100kHz -- -- 4.5 pF Emitter-Base Capacitance CEBO -VCB = 0.5V, f = 100kHz -- -- 10 pF Noise Figure NF -VCE = 5V, -IC = 100A, RG = 1k, f = 10...15000Hz -- -- 4 dB Input Impedance hie -VCE = 10V, -IC = 1mA f = 1kHz 1 -- 10 k Small Signal Current Gain hfe -VCE = 10V, -IC = 1mA, f = 1kHz 100 -- 400 -- Voltage Feedback Ratio hre -VCE = 10V, -IC = 1mA, f = 1kHz 0.5 * 10-4 -- 8 * 10-4 -- Output Admittance hoe -VCE = 1V, -IC = 1mA, f = 1kHz 1 -- 40 S DC Current Gain Gain-Bandwidth Product www.vishay.com 2 Document Number 88225 10-May-02 MMBT3906 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter (TJ = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Delay Time (see fig. 1) td -IB1 = 1mA, -IC = 10mA -- -- 35 ns Rise Time (see fig. 1) tr -IB1 = 1mA, -IC = 10mA, -- -- 35 ns Storage Time (see fig. 2) ts IB1 = -IB2 = 1mA, -IC = 10mA -- -- 225 ns Fall Time (see fig. 2) tf IB1 =-IB2 = 1mA, -IC = 10mA -- -- 75 ns Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) 0.2 (5) 0.06 (1.5) 0.20 (5.1) Document Number 88225 10-May-02 Dimensions in inches and (millimeters) www.vishay.com 3