MMBT3906
Vishay Semiconductors
for merly General Semiconductor
Document Number 88225 www.vishay.com
10-May-02 1
New Product
Small Signal Transistor (PNP)
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top Vi ew
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
Features
• PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• As complementary type, the NPN transistor
MMBT3904 is recommended.
• This transistor is also available in the TO-92 case
with the type designation 2N3906.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Base Voltage –VCBO 40 V
Collector-Emitter Voltage –VCEO 40 V
Emitter-Base Voltage –VEBO 5.0 V
Collector Current –IC200 mA
Power Dissipation at TA= 25°CP
tot 225(1) mW
300(2)
Thermal Resistance Junction to Ambient Air RθJA 450(1) °C/W
Thermal Resistance Junction to Substrate Backside RθSB 320(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Notes: (1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2A
Packaging Codes/Options:
E8/10K per 13”reel (8mm tape), 30K/box
E9/3K per 7”reel (8mm tape), 30K/box
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
MMBT3906
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88225
210-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
–VCE = 1V, –IC= 0.1mA 60 ——
–VCE = 1V, –IC= 1mA 80 ——
DC Current Gain hFE –VCE = 1V, –IC= 10mA 100 —300 —
–VCE = 1V, –IC= 50mA 60 ——
–VCE = 1V, –IC= 100mA 30 ——
Collector-Base Breakdown Voltage
–V(BR)CBO
–IC = 10µA, IE = 0 40 ——V
Collector-Emitter Breakdown Voltage
–V(BR)CEO
–IC = 1mA, IB = 0 40 ——V
Emitter-Base Breakdown Voltage
–V(BR)EBO
–IE = 10µA, IC = 0 5 ——V
Collector Saturation Voltage –VCEsat –IC= 10mA, –IB= 1mA ——0.25 V
–IC= 50mA, –IB= 5mA ——0.4
Base Saturation Voltage –VBEsat –IC= 10mA, –IB= 1mA ——0.85 V
–IC= 50mA, –IB= 5mA ——0.95
Collector-Emitter Cut-off Current –ICEV –VEB = 3V, –VCE = 30V ——50 nA
Emitter-Base Cut-off Current –IEBV –VEB = 3V, VCE = 30V ——50 nA
Gain-Bandwidth Product fT–VCE = 20V, –IC= 10mA 250 ——MHz
f = 100MHz
Collector-Base Capacitance CCBO –VCB = 5V, f = 100kHz ——4.5 pF
Emitter-Base Capacitance CEBO –VCB = 0.5V, f = 100kHz ——10 pF
Noise Figure NF –VCE =5V, –IC= 100µA, —— 4dB
RG=1kΩ, f =10...15000Hz
Input Impedance hie –VCE = 10V, –IC= 1mA 1—10 kΩ
f = 1kHz
Small Signal Current Gain hfe –VCE = 10V, –IC= 1mA, 100 —400 —
f = 1kHz
Voltage Feedback Ratio hre –VCE = 10V, –IC= 1mA, 0.5 • 10-4 —8 • 10-4 —
f = 1kHz
Output Admittance hoe –VCE = 1V, –IC= 1mA, 1—40 µS
f = 1kHz
MMBT3906
Vishay Semiconductors
for merly General Semiconductor
Document Number 88225 www.vishay.com
10-May-02 3
Electrical Characteristics (TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Delay Time (see fig. 1) td–IB1 = 1mA, –IC= 10mA ——35 ns
Rise Time (see fig. 1) tr–IB1 = 1mA, –IC= 10mA, ——35 ns
Storage Time (see fig. 2) tsIB1 =–IB2=1mA,–IC=10mA ——225 ns
Fall Time (see fig. 2) tfIB1 =–IB2 = 1mA,–IC=10mA ——75 ns
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches
and (millimeters)
