Effi ciency Through Technology
1200V XPT™ IGBTs
October 2012
NEW PRODUCT BRIEF
Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applicaons
ADVANTAGES
Hard-switching capabilies
High power densies
Low gate drive requirements
APPLICATIONS
Power inverters
Uninterrupble Power Supplies (UPS)
Motor drives
Switch-mode power supplies
Power Factor Correcon (PFC) circuits
Baery chargers
Welding machines
Lamp ballasts
FEATURES
Opmized for high-speed switching
(up to 50kHz)
Square RBSOA
Posive thermal coefficient of VCE(sat)
An-parallel ultra-fast diodes
Avalanche rated
Internaonal standard packages
IXYS Corporaon expands its 1200V XPT™ IGBT product line. With current rangs of up to 220A,
these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-
ons. The high-speed switching capabilies (up to 50 kHz) of these IGBTs allow designers to use
smaller and lighter components in their systems. For those IXYS customers who need to lower
turn-off losses and/or remove snubbers/clamps from their designs, IGBTs with co-packed ultra-fast
recovery diodes in Sonic-FRD™ or HiPerFRED™ Technology are available.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch-
Through (XPT™) design plaorm, these devices feature high-current handling capabilies,
high-speed switching abilies, low total energy losses, and low current fall mes. They have a
posive collector-to-emier voltage temperature coefficient, making it possible for designers to use
mulple devices in parallel to meet high current requirements. Their low gate charges also help
reduce gate drive requirements and switching losses. In addion to being avalanche rated, these
devices have square Reverse Bias Safe Operang Areas (RBSOA) up to the breakdown voltage of
1200V – a necessary ruggedness in snubberless hard-switching applicaons.
The new 1200V XPT™ devices with co-packed an-parallel Sonic-FRD™ or HiPerFRED™ diodes are
opmized to reduce turn-off losses and suppress ringing oscillaons, thereby producing smooth
switching waveforms and significantly lowering electromagnec interference (EMI) in the process.
Furthermore, due to the so recovery characteriscs of the diodes, the IGBTs can be switched on at
very high rates of change in current (di/dt), even in low current and temperature condions.
There are various high-voltage and high-speed applicaons that the new IGBTs are well-suited for.
Among these are power inverters, uninterrupble power supplies, motor drives, switch-mode power
supplies, power factor correcon circuits, baery chargers, welding machines, and lamp ballasts.
These 1200V XPT™ IGBTs are available in the following industry standard packages: TO-220, TO-247,
ISO TO-247™, TO-264, SOT-227B, SOT-227B, PLUS247, PLUS264™ and ISOPLUS247™.
OVERVIEW
TO-264
TO-247
PLUS247
ISOPLUS247
PLUS264
TO-220
SOT-227B
PB120XPTIGBT 1.0October 2012
1200V XPT™ IGBT Summary Table
Figure 3 illustrates a baery charger circuit that ulizes a half-bridge asymmetrical
forward converter topology. Commonly implemented on the primary side of 220VAC
offline switch-mode power supplies, it consists of a primary recfier, a control unit
(DC-DC converter, MCU, IGBT Gate Driver), and a half-bridge asymmetrical forward
converter. Two XPT™ IGBT devices, IXYH40N120B3D1 (Q1 & Q2), form the forward
converter stage of the circuit, providing a reliable and energy-efficient power conversion.
VAC Input
Figure 3: Ba ery Charger Circuit
D3
D4
L1
T1
D2
D1
C1
MCU
DC-DC
Converter
C2 To
Q1
Q2
IGBT
Gate
Driver
Figure 1 illustrates a simplified electronic lamp ballast circuit. It consists of a primary
recfier, power factor correcon circuit, control unit (Power supply, MCU, and IGBT Gate
Driver), half-bridge inverter and resonant output stage. Two IXYH50N120C3D1 XPT™
IGBTs (Q1 & Q2) are paired to form the half-bridge power inverter stage used to facilitate
the ignion and sustain the nominal running AC voltage across the resonant output stage
of the lamp.
Applicaon Circuits Legend
on Circuits
Figure 1: Electronic Lamp Ballast
CRES
CDC
VAC Input Lamp
Power
Factor
MCU
IGBT
Gate
Driver
Power
Supply Q1
Q2
Capacitor
LRES
Figure 2 shows a general circuit diagram of a high-current TIG welding inverter. This
topology is comprised of a recficaon stage, power factor correcon (PFC) stage,
control stage (Power supply, MCU, and IGBT Gate Driver), and power-inverter stage. An
AC input (185VAC-265VAC) from the power grid is applied to the recficaon stage to be
converted into a DC value. This DC value then goes through the PFC circuit where its
distorted current is reshaped into a waveform in phase with the input voltage. The DC
output of the PFC circuit next enters the power-inverter stage, which is a full-bridge
inverter and made up of four IXYB82N120C3H1 XPT™ IGBTs (Q1, Q2, Q3, Q4), to be
converted back to an AC voltage that has a higher frequency (typically ranging from
30kHz to 50kHz). This AC voltage signal is applied to the output stage of the TIG welder.
Figure 2: TIG Welding Inverter
Q1
Q2
Q3
Q4
Power
Factor
Circuit
MCU
IGBT
Gate
Driver
Power
Supply
CDC
TIG
Welder
Output
Load
Stage
VAC Input
ISO TO-247
TO-247
TO-247
TO-220
TO-247
TO-247
TO-220
ISOPLUS247
TO-247
TO-247
TO-247
TO-247
SOT-227B
SOT-227B
TO-247
TO-247
ISOPLUS247
SOT-227B
PLUS264
TO-247
SOT-227B
TO-264
PLUS247
TO-264
PLUS247
Package
Style
VCES
(V)
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
IC25
TC=25°C
(A)
16
36
40
40
66
66
66
56
96
86
70
64
105
105
100
90
104
134
160
160
152
188
188
220
220
IC110
TC=110°C
(A)
7
17
20
20
30
30
30
32 (TC=90°C)
40
40
40
40
46
46
50
50
58
62
82
82
86
100
100
120
120
VCE(sat)
max
TJ=25°C
(V)
4
4
4
4
4
4
4
4
2.9
2.9
4
4
3.2
3.2
3.5
4
3.5
3.5
3.2
3.2
3.5
3.5
3.5
3.5
3.5
tfi
typ
TJ=125°C
(ns)
105(TJ =150 °C)
105(TJ =150 °C)
105(TJ =150 °C)
105(TJ =150 °C)
88
88
88
60(TJ=150 °C)
206
206
38
38
95
95
60(TJ=150 °C)
60(TJ=150 °C)
125
125
95
95
125
125
125
120(TJ=150 °C)
120(TJ=150 °C)
Eoff
typ
TJ=125°C
(mJ)
0.7(TJ =150 °C)
0.7(TJ =150 °C)
0.7(TJ =150 °C)
0.7(TJ =150 °C)
0.9
0.9
0.9
1.4 (TJ=150 °C)
2.05
2.05
0.7
0.7
3.7
3.7
1.4
1.4 (TJ=150 °C)
3.55
3.55
3.7
3.7
3.55
3.55
3.55
5.3 (TJ=150 °C)
5.3 (TJ=150 °C)
RthJC
max
IGBT
(°C/W)
1.78
0.54
0.54
0.54
0.3
0.3
0.3
0.43
0.26
0.26
0.26
0.26
0.25
0.25
0.2
0.2
0.32
0.18
0.12
0.12
0.18
0.13
0.13
0.1
0.1
Configuraon
Copacked (FRED)
Copacked (FRED)
Single
Single
Single
Copacked (FRED)
Single
Copacked (FRED)
Single
Copacked (FRED)
Single
Copacked (FRED)
Single
Copacked (FRED)
Single
Copacked (FRED)
Single
Copacked (FRED)
Copacked (FRED)
Single
Single
Single
Single
Single
Single
IXYJ20N120C3D1
IXYH20N120C3D1
IXYH20N120C3
IXYP20N120C3
IXYH30N120C3
IXYH30N120C3D1
IXYP30N120C3
IXYR50N120C3D1
IXYH40N120B3
IXYH40N120B3D1
IXYH40N120C3
IXYH40N120C3D1
IXYN82N120C3
IXYN82N120C3H1
IXYH50N120C3
IXYH50N120C3D1
IXYR100N120C3
IXYN100N120C3H1
IXYB82N120C3H1
IXYH82N120C3
IXYN100N120C3
IXYK100N120C3
IXYX100N120C3
IXYK120N120C3
IXYX120N120C3
Part
Number
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