Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1Publication Order Number:
MSB1218A--RT1/D
MSB1218A--RT1G
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC--70/SOT--323 package which is designed for low power surface
mount applications.
Features
High hFE, 210 -- 460
Low VCE(sat),<0.5V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA=25C)
Rating Symbol Value Unit
Collector--Base Voltage V(BR)CBO 45 Vdc
Collector--Emitter Voltage V(BR)CEO 45 Vdc
Emitter--Base Voltage V(BR)EBO 7.0 Vdc
Collector Current -- Continuous IC100 mAdc
Collector Current -- Peak IC(P) 200 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) PD150 mW
Junction Temperature TJ150 C
Storage Temperature Range Tstg -- 55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector--Emitter Breakdown Voltage
(IC=2.0mAdc,I
B=0)
V(BR)CEO 45 -- Vdc
Collector--Base Breakdown Voltage
(IC=10mAdc, IE=0)
V(BR)CBO 45 -- Vdc
Emitter--Base Breakdown Voltage
(IE=10mAdc, IE=0)
V(BR)EBO 7.0 -- Vdc
Collector--Base Cutoff Current
(VCB =20Vdc,I
E=0)
ICBO -- 0.1 mA
Collector--Emitter Cutoff Current
(VCE =10Vdc,I
B=0)
ICEO -- 100 mA
DC Current Gain (Note 2)
(VCE =10Vdc,I
C=2.0mAdc)
hFE1 210 340 --
Collector--Emitter Saturation Voltage
(Note 2) (IC= 100 mAdc, IB=10mAdc)
VCE(sat) -- 0.5 Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
COLLECTOR
3
1
BASE
2
EMITTER
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Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MSB1218A--RT1G SC--70
(Pb--Free)
3000 /Tape & Reel
SC--70 (SOT--323)
CASE 419
STYLE 4
MARKING DIAGRAM
3
1
2
BR = Device Code
M = Date Code*
G= Pb--Free Package
BR M G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MSB1218A--RT1G
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2
Figure 1. Derating Curve
250
200
150
100
50
0
-- 50 0 50 100 150
TA, AMBIENT TEMPERATURE (C)
PD,P
O
WER DI
SS
IPATI
O
N
(
MILLIWATT
S)
Figure 2. IC-- V CE
VCE, COLLECTOR VOLTAGE (V)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 5. On Voltage
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
0
120
90
60
30
036 9 15
D
C
C
URRENT
G
AIN
1000
0.1
100
10 1 10 100
TA=25C
TA=--25C
TA=75C
VCE =10V
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2
0.01
1.5
1
0.5
00.1 1 10 100
TA=25C
COLLECTOR VOLTAGE (mV)
900
0.2
800
700
600
500
400
300
200
100
0.5 1 5 10 20 40 60 80 100 150 200
TA=25C
VCE =5V
12
0
TA=25C
300 mA
IB=50mA
100
150
200
250
RθJA = 833C/W
Figure 6. Capacitance
VEB (V)
13
0
12
11
10
9
6123 4
Cib, INPUT CAPACITANCE (pF)
8
7
MSB1218A--RT1G
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3
VCB (V)
Figure 7. Capacitance
14
0
12
10
8
6
4
010 20 30 40
Cob, CAPACITANCE (pF)
2
MSB1218A--RT1G
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4
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 mm
inches
SCALE 10:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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MSB1218A--RT1/D
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