IXZ308N120
Z-MOS RF Power MOSFET
VDSS = 1200 V
ID25 = 8.0 A
RDS(on) = 2.1 Ω
PDC = 880 W
Symbol Test Conditions Maximum Rat-
ings
VDSS TJ = 25°C to 150°C 1200 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 Tc = 25°C 8 A
IDM Tc = 25°C, pulse width limited by TJM 40 A
IAR Tc = 25°C 8 A
EAR Tc = 25°C TBD mJ
dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5 V/ns
IS = 0 >200 V/ns
PDC 880 W
PDHS Tc = 25°C, Derate 4.4W/°C above 25°C 440 W
PDAMB Tc = 25°C 3.0 W
RthJC 0.17 C/W
RthJHS 0.34 C/W
min. typ. max.
VDSS VGS = 0 V, ID = 4 ma 1200 V
VGS(th) VDS = VGS, ID = 250µΑ 3.5 6.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
RDS(on) VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
2.1
Ω
gfs VDS = 50 V, ID = 0.5ID25, pulse test 10.1 S
TJ -55 +175 °C
TJM 175 °C
Tstg -55 + 175 °C
TL 1.6mm(0.063 in) from case for 10 s 300 °C
Weight 3.5 g
IDSS VDS = 0.8VDSS TJ = 25C
VGS=0 TJ =125C 50
1
µA
mA
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Lo Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
DRAIN
SG1 SG2
GATE
SD1 SD2
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
IXZ308N120
Z-MOS RF Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
RG 1
Ω
Ciss 1960 pF
Coss VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz 59 pF
Crss 9.2 pF
Cstray Back Metal to any Pin 33 pF
Td(on) 4 ns
Ton VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
5 ns
Td(off) 4 ns
Toff 6 ns
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
IS VGS = 0 V 8
Α
ISM Repetitive; pulse width limited by
TJM 48 A
VSD IF=Is, VGS=0 V, Pulse test, t ≤
300µs, duty cycle ≤2% 1.5 V
Trr TBD ns
Source-Drain Diode
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585
6,731,002
IXZ308N120
Z-MOS RF Power MOSFET
Doc #dsIXZ308N12 REV 06/04
© 2004 IXYS RF
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: info@ixysrf.com
Web: http://www.ixysrf.com
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10 0 0
10 0 0 0
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Vds in Volts
Capacit ance in pF
IXZ308N120 Capacitances verses Vds
Ciss
Coss
Crss
