TSAL5300
www.vishay.com Vishay Semiconductors
Rev. 2.1, 24-Aug-11 1Document Number: 81008
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control units with high power
requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
96 11505
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSAL5300 45 ± 22 940 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL5300 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSAL5300-MSZ Tape and ammopack MOQ: 5000 pcs, 1000 pcs/ammopack T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered
on PCB RthJA 230 K/W
TSAL5300
www.vishay.com Vishay Semiconductors
Rev. 2.1, 24-Aug-11 2Document Number: 81008
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.35 1.6 V
IF = 1 A, tp = 100 μs VF2.6 3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj25 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie30 45 150 mW/sr
IF = 1 A, tp = 100 μs Ie260 350 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe35 mW
Temperature coefficient of φeIF = 20 mA TKφe- 0.6 %/K
Angle of half intensity ϕ± 22 deg
Peak wavelength IF = 100 mA λp940 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
IF = 1 A tr500 ns
Fall time IF = 100 mA tf800 ns
IF = 1 A tf500 ns
Virtual source diameter Method: 63 % encircled energy d 2.3 mm
TSAL5300
www.vishay.com Vishay Semiconductors
Rev. 2.1, 24-Aug-11 3Document Number: 81008
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
tp- Pulse Duration (ms)
96 11987
10
0
101
10
1
10
-1
10-1 100102
10-2
I - Forward Current (A)
F
tp/T = 0.01
IFSM = 1 A (Single Pulse)
0.05
0.1
0.5
1.0
V
F
- Forward Voltage (V)
13600
101
100
102
103
104
tP = 100 µs
tP/T = 0.001
0
I
F
- Forward Current (mA)
4
32
1
14327
103
101102104
100
0.1
1
10
1000
100
IF- Forward Current (mA)
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
890
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
14291
- Relative Radiant Power
e rel
Φ
I
F
= 100 mA
990
940
TSAL5300
www.vishay.com Vishay Semiconductors
Rev. 2.1, 24-Aug-11 4Document Number: 81008
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
94 8883 0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
34.4 ± 0.55
<0.7
1.1 ± 0.25
0.5 + 0.15
- 0.05
Ø 5 ± 0.15
2.54 nom.
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
8.7 ± 0.3
7.7 ± 0.15
1 min.
Area not plane
technical drawings
according to DIN
specifications
6.544-5258.05-4
Issue: 8; 19.05.09
96 12122
AC
(3.6)
11.4 ± 0.3
R2.49 (sphere)
TSAL5300
www.vishay.com Vishay Semiconductors
Rev. 2.1, 24-Aug-11 5Document Number: 81008
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Ø 5 mm Devices on Tape
AMMOPACK
The tape is folded in a concertina arrangement and laid in
cardboard box.
If components are required with cathode before the anode
(figure 12), then start of tape should be taken from the side
of the box marked “-”. If components are required with
anode before cathode, then tape should be taken from the
side of the box marked “+”.
Fig. 11 - Tape Direction
TAPE DIMENSIONS TSAL5300
OPTION H ± 0.5 mm QUANTITY/BOX
CS21Z 22 1000
FSZ 27 1000
GSZ 29 1000
MSZ 25.5 1000
0.3 ± 0.2
2.54 + 0.6
- 0.1
12.7 ± 0.2
5.08 ± 0.7
18 + 1
- 0.5
9± 0.5
Measure limit over 20 index-holes: ± 1
12 ± 0.3
0.9 max.
6.35 ± 0.7
Ø 4 ± 0.2
12.7 ± 1
± 1
“H”
± 2
19314
Tape feed direction
Diodes: cathode before anode
Transistors: collector before emitter
Label
Tape feed direction
C
B
A
94 8667
Diodes: anode before cathode
Transistors: emitter before collector
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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