BD 233 BD 235 BD 237 2 AMPERE PLASTIC MEDIUM POWER POWER TRANSISTOR SILICON NPN TRANSISTOR NPN SILICON designed for use in 5 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 45, 60, 80 VOLTS @ DC Current Gainn, = 40 (Min) @ ln= 0.15 Adc 25 WATTS @ 8D 233, 235, 237 are complementary with BD 234, 236, 238 MAXIMUM RATINGS Rating Symbol Type Value Unit BD 233 45 Collector- Emitter Voitage VcEo BD 235 60 Vde BD 237 80 BD 233 45 Collector-Base Voltage Vv BD 235 60 Vde 8 cB0 | go 237 30 Emitter-Base Voltage Vv 5 Vdc a EBO HARDWARE. AVAILABLE: Collector Current t Cc 2.0 Adc fp 1. MICA WASHER14B 52600 F03 Base Current ig 70 Ade 2. LOCK WASHERO4A 2200 FOI Total Device Dissipation T cn 25C Po 25 Watts Operating and Storage Junction T J Ts 55 to +150 c 7.49 Temperature Range , stg Me 534 3:68 3.75 | THERMAL CHARACTERISTICS 4.01 2.92 o1A THRU Characteristic Symbol Max Unit t | 23.00 Thermal Resistance, Junction to Case 8 ic 50 C/W a4 =o af io = sa) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) 2.18 2.41 Characteristic Symbol Type Min|Max | Unit a Collector-Emitter Sustaining Voltage* BV Vde (Ig=0.1 Adc, Ip =0) CEO | ap 233 | 45 | a, oso 15:36 Bp 2ae | 60 | 288 a BS 80 | STYLE 1 t Collector Cutoff Current loBo mAdc PIN 1. EMITTER ina (Vn =45 Vde, f= 0) Bp 233 | {01 2. COLLECTOR (VER =60 Vdc, IF =0) BD 235 | |0.1 3. BASE l 2.36 TP (Veg 780 Vde, I= 0) BO 237 | {0.1 $83 9.38 Emitter Cutoff Current I mAdc 0.63 2.41 (Vpp7 50 Vdc, 1,=0) EBO |10 2 38 g 756 DC current Gain | (20.15 A, V,.,.=2 V) h 40 | =r fo CE Fe1 = = HEAT SINK We tA Nce7?) OFE2 28 CONTACT AREA TYP Collector-Emitter Saturation Voltage VeE(sat) Vde (BOTTOM) Ne =1 Adc, I, = 0.1 Adc) {0.6 When mounting the device. torque not to exceed 0.07 m-kg Base-Emitter On Voltage Vee(on) Vde ff }ead bending is required. use suitable clamps or other supports (le =1 Adc, Vee =2.0 Vdc) 11.3 between transistor case and point of bend All dimensions in millimeters Current-Gain-Bandwidth Product ty MHz om (1, = 250 mAdc, Veg 10Vde, f=1.0 MHz) 3.0 | CASE 77-03 * Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. f&) MOTOROLA INC.. 1971 BD 233 BD 235 BD 237 FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA 10 wo The Safe Operating Area Curves indicate !cVc_E limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum Ty, power-temperature derating must be ob- served for both steady state and pulse power conditions. COLLECTOR CURRENT (AMP) 0,3 2 8D Ot BD 3 10 3 100 Veg. COLLECTOR- EMITTER VOLTAGE (VOLTS) FIGURE 2 COLLECTOR SATURATION REGION O.5A Ve, COLLECTOR-EMITTER VOLTAGE {VOLTS) 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1000 FIGURE 3CURRENT GAIN Ig, BASE CURRENT (nA) FIGURE 4ON VOLTAGE E+ = 25C - 0.9 T= + Voc (sat) @ Ic/lg = 10 Ty = +25C 06 VOLTAGE (VOLTS) Vee @ Vee = 2.0V Wer 03 hee, OC CURRENT GAIN, NORMALIZED Vee {sot} @ le/ Ty = 10 Q 2030 50 10 20 50 100 =. 200 300 500 1000 2000 Ic. COLLECTOR CURRENT mA} le, COLLECTOR CURRENT (mA) . FIGURE 5THERMAL RESPONSE 0.05 PULSE TRAIN SHOWN . READ TIME At t, t 0.03 , - pae- tz Tatpt) To = Prot) Quclt) 1.0 eo B 05 z ow 03 #2 02 Biclt) = 1c Be Osc = 4.16C/W Max ee oo SINGLE Bsc =3.5C/W Typ we 9, a S007 D CURVES APPLY FOR POWER Ss z= z So z= 0.02 . D=ty/te 0.61 0.01 0.02 0.03 0.05 0.1 02 03 05 10 20 30 50 10 20 30 = 50 100 200 300 500 = =:1000 t, TIME OR PULSE WIDTH (ms) 677