MOTOROLA SC IXSTRS/R FI qb DE fe seccou go4Loaa og 96D 81082 D $- 38-5 J : T 33-72 [ 6367284" MOTOROLA SC CXSTRS/R F)- MOTOROLA ga SEMICONDUCTOR mummmenmes | 1113090 MJH13090 TECHNICAL DATA MJ13091 MJH13091 " | rr ADT aT 165 AMPERE SWITCHMODE SERIES NPN SILICON NPN SILICON POWER (TRANSISTORS POWER TRANSISTORS These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They oe AMO ee wars are particutarly suited for line operated switch-mode applications such as: @ Switching Regulators A MJ13090 @ Inverters fT? c MJ13091 @ Solenoid and Relay Drivers t | @ Motor Controls te n/- | cS @ Daflection Circuits 100C Performance Specified for: Reverse-Biased SOA with Inductive Loads < Switching Times with Inductive Loads a G STYLE 4 160 ns Inductive Fall Time (Typ) re + $$ ne airren Cc ' CASE COLLECTOR Saturation Voltages . Leakage Currents v MOTES- 1. DIMENSIONS 0 AND ARE DATUMS. 2 GJ ISSEATING FLAME AND DATUM 2 POSITIONAL TOLERANCE FOR MOUNTING HOLE Q. u MAXIMUM RATINGS Aating Symbol |MJ13090|MJ13091) MJH13090 | MJH13091 | Unit [# [essons@ Tre] : Collector-Emitier Voltage | VcEQ{susj} 400 450 400 450 Vde [4 [enon@t lvOleo] i Collector-Emitter Voltage Voev 650 750 650 750. | Vde OEE anesER \ Emitter-Base Voltage Vea 6.0 Vde } cone cootinuous ! 15 ee CASE 1-06 _ Ic = Peak (1} tom 20 TO-204AA Base Current Adc ' Continous Ig 5.0 c MJH13090 Peak {1} lem 10 (te tt a MJH13091 Total Device Oissipation Po Watts rr @ Tg = 26C 175 126 @ Te= 100C 100 50 Derate above 25C 1.0 10 wer Operating and Storage Ty.Tsg -65 to 200 -55 to 150 C Junction Temperature Range ' THERMAL CHARACTERISTICS Characteriatic Symbol Max Unit ? teitector 3 EMITTER Thermal Resistance, Rec 1.0 ecew re COLLECTOR Junction to Case Lead Temperature for Th 275 C Soldering Purposes, 1/8 from Case for 5 Seconds. {1} Pulse Test: Pulse Width < 5.0 ys, Duty Cycla 210%. CASE 340-01 TO-218AC Dasigners Data for Worst Case Conditions The Designer's Data Sheet permits the design of most circuits entirely from the infor- mation presented. Limit curves rep ing boundaries on device istics are given to facilitate worst case dasign. 3-816MOTOROLA SC {XSTRS/R Fi ib DE 5367254 ooaioa3 2 hee oe = a eee .w oe [ 8967254 MOTOROLA SC (XSTRS/R F) =. 96D 81083. OD | MJ13090, MJ13091, MJH13090, MJH13091 T-33-/5 _ o> oo TT 33-)2 ELECTRICAL CHARACTERISTICS (Tc = 26C unless otherwise noted) Characteristic | Symbol | Min | Typ Max | Unit OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Table 1) VcEO(sus) Vde (lc = 100 mA, Ip = G) MJ13090, MJH13090 400 _ = MJ13091, MJH13091 450 - - Collacter Cutoff Current icev mAdc (Vcev = Rated Value, VBe(off) = 1.5 Vde) - - 0.5 (Vcgy = Rated Value, VBE(off) = 1-5 Vdc, Tc = 100C) - _ 25 Coltector Cutoff Current icER _ _ 3.0 mAdc (Vce = Rated Voey. Ree = 50 9, Tc = 100C) . Emitter Cutoff Current leBO - _ 1.0 mAde (Veg = 8.0 Vde, I = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Is/b See Figures 12 and 13 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 14 ON CHARACTERISTICS (1) OC Current Gain hee 8.0 _ - _ (Ic = 10 Ade, Veg = 3.0 Vde Coliector-Emitter Saturation Voltage VcEtsat} Vde {Ig = 10 Ade, Ig = 2.0 Adc} - _ 1.0 (ig = 15 Adc, Ig = 3.0 Adc) _ _ 3.0 {Ig = 10 Ade, Ip = 2.0 Adc, Tc = 100C) _- - 2.0 Base-Emitter Saturation Voltage VBE{sat) Vde lig = 10 Ade, Ig = 2.0 Adc) - - 15 (ig = 10 Ade, Ip = 2.0 Ade, Tc = 100C) - - 15 DYNAMIC CHARACTERISTICS Output Capacitance Cob - _ 350 pF (Veg = 10 Vdc, Ie =O, frest = 1.0 kHz) . SWITCHING CHARACTERISTICS Rasistive Load (Tabte 1} - Delay Time (Vee = 250 Vie, I = 10 Ade, td = 0.03 0.08 as Rise Time ty _ 0.13 0.50 ~ [pq = 1.25 Ade, ty = 30 us, Storage Time Duty Cycle <2%, V = 5.0 Vdc} ts _- 0.55 2.50 Fall Time y Cyclo So, MBELoft}~ 9 tt = 0.10 0.50 inductive Load, Clampad (Table 1) Storage Time tsy - _ 0.80 3.00 ns Crossover Time (cia) = 10-4, {Ty = 100C) te _ 0.175 0.40 Fall Time (pq = 1.25 Ade, tf _ 0.15 0.30 Storage Time VBe(off) = 6.0 Vdc, tsy - 0.50 _ Crossover Time VcE(pk) = 250 V) {Ty = 25C) te 0.15 Fall Time is - 0.10 - (1) Pulse Test: PW = 300 us, Duty Cycle < 2%. ic A= = AEE; B 3-817MOTOROLA SC IXSTRS/R FT qk DE ese7esy ooaLoay y [ 6367254 MOTOROLA SC (XSTRS/R FD) __. 96D 81084 D | MJ13090, MJ13091, MJH13090, MJH13091 T-33-/5 733-13 ~ DC CHARACTERISTICS FIGURE 1 DC CURRENT GAIN FIGURE 2 COLLECTOR SATURATION REGION g o = z 3 & 5 & Ty = 25C 3 @ S 3 E S = 2 a So < re = = a a 02 a $01 02 63 05 07 10 20 30 50 70 10 20 0.05 007 0.1 02 03 06 07 1.0 20 30 50 Ic. COLLECTOR CURRENT {AMPS) Ig. BASE CURRENT {AMPS} FIGURE 3 COLLECTOR-EMITTER SATURATION VOLTAGE FIGURE 4 BASE-EMITTER SATURATION VOLTAGE 30 2.0 COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 5 = g 5 5 3s 10 s Eo? = | ii 20s O41 & = 03 0203 05 0.7 10 20 30 50 7.0 10 20 0.2 03 08 07 10 20 30 60 70 10 20 fp. COLLECTOR CURRENT {AMPS) . Ip. COLLECTOR CURRENT (AMPS) FIGURE 5 COLLECTOR CUTOFF REGION FIGURE 6 CAPACITANCE 104 10K Vee = 280 zm = = a 1900 5 12 q = ue 2 3 5 = a 3 a = 100 8 3s ~ 490 10-1 10 O48 02 0 +0.2 +04 +06 10 10 100 1000 Vpe. BASE EMITTER VOLTAGE IVOLTS) Vp. REVERSE VOLTAGE (VOLTS} 3-818 ene ee _ ne pee en A en eee Re NTMOTOROLA SC LXSTRS/R FF < | ga673sa MOTOROLA SO CXSTRE/R F) MJ13090, MJ13091, MJH13090, MJH13091 db DE Beae7254 coszoass ff g6D 81085 OD T-33-/5 fm ne Ie T3313 TABLE 1 TEST CONDITIONS FOR DYNAMIC PERFORMANCE Vceolsus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING 002 uF 100 svestlv ate AA HP 214 a or ew AW * onsi91 S | 20 Tf 10 uF TURN ON TIME 410 >WA--P+_ 1 - t 20 =-35 J] | Le> Aa 2 g| ou Y wp [- Bt 52 2 = AR 002 uF 2 ty, adjusted to a= _ 1 26 + $50 1OpF obtain the foresd z . > t-Y = 2N5337 hpe dated o TURN OFF TIME PW Varied to Attain 2 500 (Ute inductive switching lg = 100 mA driver as the input to a + -v the resistive Gast circuit Connect Point A to bass of TUT Adjust ~V to obtain desired Vee (oft) at Point A Adjust R1 to obtain ly For switching and REsoa, R2= 0 For VcEo(sus) 82 = 5 hi L 120 Veq= 250V 2 K = Bo | tea 8Omt vec= Ov aa 008 Velamp 250 V re a6n 2 Regi) = 0.72 Veco #20 Agedsusted to attain dasired Igy Pulse Width = 30 ps o> NDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT ty Adjusted to Z le Obtan tc | 5 | Feo Clow i Clamped tem Leow Ce! f tht ieee 6 trour PU $l heon oes hl oe Leo Fegy? Ses Above tor Equivatant Lo} tg* aT 7 Detailed Conditions Vetemp = ty Yeely a clemp - I Tf ce cer yene Tast Equipment Scope Tektronm ong tame fatat 478 oF Equivetent FIGURE 7 INDUCTIVE SWITCHING MEASUREMENTS 10 9.0 aw 8.0 70 5 60 Bg 50 40 gu B20 1.0 le pk VCEipk) 90% VCE(pK) {f\ 90% Icipny [AMPS ty tty u BASE 10% VCE(pk) 10% Ig ok TIME 3-819 0 1.0 FIGURE & PEAK REVERSE CURRENT Ty = 25C 20 #30 4&0 60 60 Vpe(oft)- BASE-EMITTER VOLTAGE (VOLTS) 10 80MOTOROLA SC {XSTRS/R FF [~ "6367254 MOTOROLA SC CXSTRS/R F) . MJ13090, MJ13091, MJH13090, MJH13091 ~~~ DE ese7esy ooa8l08b 2 6 TBR -/S TAs 1s | SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not inphase. Therefore, separate measure- ments must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsy = Voltage Storage Time, 90% Igy to 10 % Vclamp try = Voltage Rise Time, 1090% Veiamp tf = Current Fall Time, 90-10% Ic te; = Current Tail, 102% Ic te = Crossover Time, 10% Velamp to 10% Ic Anenlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. INDUCTIVE SWITCHING FIGURE 9 STORAGE TIME Bie Ty= 78C wo o Vaejoth) = 1.0 nN. Qo Vee (ott} = 5.0 tey, STORAGE TIME (8) S 2 ~ 10 15 n > 6.0 7.0 Ig, COLLECTOR CURRENT (AMPS) FIGURE 11 THERMAL RESPONSE 0.01 oat 0.02 0.05 ot 02 as 10 rit}, TRANSIENT THEAMAL RESISTANCE (NORMALIZED) For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222; Powt = 172 Vecleltclf In general, try + tfj = te. However, at lower test currents this relationship may not be valid. Asiscommonwith most switching transistors, resistive switching is specified at 25C and has become a bench- mark for designers. However, for designers of high frequency converter circuits, the user-oriented spacifica- tions which make this a SWITCHMODE" transistor are the inductive switching speeds (te and tsy) which are guaranteed at 100C. FIGURE 10 CROSSOVER AND FALL TIMES pf=6.0 Ty= 2 ~ 2 an 1, TIME (us) e e : RD .1 20 2.0 3.0 5.0 7.0 10 15 20 Ic, COLLECTOR CURRENT (AMPS) Pigkd Cn Te OUTY CYCLE, D = 11/12 Reseltl = t) Resc Rage = 1.0C/W Max D Curves Apply For Power Pulse Train Showa Read Time @ tt Typk) Te = Pipky Roucit) 20 50 10 20 50 100 200 $00 16k TIME (ms) 3-820MOTOROLA SC IXSTRS/R FT ' 6367254 MOTOROLA SC (XSTRS/R FD MJ13090, MJ13091, MJH13090, MJH13091 fb DE 367254 081087 o i gep 81087..D. T-33-/5 TT 323-143 i l i 4 1 | i | The Safe Operating Area figures shown in Figures 12 and 13 are epecified for these devices under the test conditions shown. FIGURE 12 FORWARD BIAS SAFE OPERATING AREA MJ13090 and MJ13091 20 16 10 2 5.0 = = tf 2.0 Z =t a = 0.6 B galt -Bonding Wire Umit 3 ae 5 - Thermal Limit Oy Ot Et om Sacond Breakdown Limit 00s 5.0 19 20 50 00 200 450 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 13 FORWARD BIAS SAFE OPERATING AREA MJH13090 and MJH13091 20 1.0 1 g = 50 = 5 | = ce = Lx) 0s 5 3 === Bonding Wire Limit 8 -- Thermal timit t pul Second Breakdown Limit 5.0 10 20 0 100 200 500 Veg. COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 14 REVERSE BIAS SAFE OPERATING AREA MJ! MJ13091, MJH13091 ys Al> 4.0 Vee (ott) = = 1.00 6.0 fe, COLLECTOR CURRENT (AMPS) 100 =-200 300 400 500 600 700 800 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) 3-821 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate lcVcE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. - The data of Figures 12 and 13 are based on Tc = 26C; TJ(p) is variable depending on power level. Second break- down pulse limits are valid for duty cycles to 10% but must be derated when Tc = 25C. Second breakdown limita- tions do not derate the same as thermal limitations. Allow- able current at the voltages shown on Figures 12 and 13 may be found at any case temperature by using the appro- priate curve on Figure 15. TJ(pk) May be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values tess than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse-biased. Under these conditions the collector voitage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage- current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives RBSOA characteristics. FIGURE 15 POWER DERATING 100 Derating z MJ13090 and MJ13091 = 80 MJHI Ss 5 = gg gs z & z= a 40 = Thermal Derating = MJH13090 and MJH13091 ap} MJ13090 end MJ19091 40 80 120 160 200 Te, CASE TEMPERATURE (C)